Results 201 to 210 of about 83,993 (296)

Control of electrical properties in solution-processed ATO thin-film transistors through gallium doping. [PDF]

RSC Adv
Hwang BK, An JH, Lee BR, Park EJ, Jung H, Son MK, Jung HJ, Heo SW.   +7 more
europepmc   +1 more source

High‐Yield Fabrication of Electrolyte‐Gated Transistors Based on Graphene Acetic Acid

Advanced Electronic Materials, EarlyView.
We fabricated a liquid‐gated transistor based on graphene acetic acid, which is dielectrophoretically deposited, featuring a spatial resolution down to 10 microns. Our method enables a versatile and reproducible fabrication featuring state‐of‐the‐art performance.
Georgian Giani Ilie, Lara Franchin, Ludovica Pradetto Battel, Stefano Bonaldo, Alessandro Paccagnella, Biagio di Vizio, Stefano Agnoli, Rafael C. Hensel, Antonio Gaetano Ricciardulli, Simone Battiston, Mauro Sambi, Francesco Sedona, Paolo Samorì, Stefano Casalini   +13 more
wiley   +1 more source

Optimizing Annealing Temperature for Enhanced Electrical Performance and Stability of Solution-Processed In₂O₃ Thin-Film Transistors. [PDF]

Micromachines (Basel)
Kim T, Lee S, Lee YW, Kim D, Yun Y, Bae JH, Lee H, Park J.   +7 more
europepmc   +1 more source

Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures

Advanced Electronic Materials, EarlyView.
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim, Seung Kyu Ryoo, Min Kyu Yeom, Dong Jae Kim, Cheol Seong Hwang   +4 more
wiley   +1 more source

On the importance of crystal structures for organic thin film transistors. [PDF]

Acta Crystallogr C Struct Chem
Schweicher G, Das S, Resel R, Geerts Y.
europepmc   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

Analysis of the Ambipolar Conduction of Tin Monoxide Thin-Film Transistors with Indium Tin Oxide Electrodes. [PDF]

ACS Appl Mater Interfaces
Mun SA, Park S, Lee MH, Lee Y, Kang S, Choi J, Ham J, Choi J, Hwang CS.   +8 more
europepmc   +1 more source

High Mobility (>200 cm2 V−1 s−1) Transparent Top Gate IGZO TFTs with Oxidized Metal Gate Insulator for Enhanced Conductivity

Advanced Electronic Materials, EarlyView.
We demonstrate a top gate Nb capping TFT architecture that induces controlled oxygen out‐diffusion from the IGZO channel. This mechanism generates shallow donor states and enhances electron delocalization, enabling extended percolation pathways. The resulting thin‐film transistors exhibit high mobility, suppressed leakage currents, and strong optical ...
Hyeonjeong Sun, Yeoeun Yun, Kyubin Hwang, Jiyoung Bang, Seungmin Choi, Seungjae Lee, Taeyang Kim, Suhwon Choi, Eunsuk Choi, Jae Kyeong Jeong, Seung‐Beck Lee   +10 more
wiley   +1 more source

Reliability of the Transmission Line Method and Reproducibility of the Measured Contact Resistance of Organic Thin-Film Transistors. [PDF]

ACS Nano
Wollandt T, Steffens S, Radiev Y, Letzkus F, Burghartz JN, Witte G, Klauk H.   +6 more
europepmc   +1 more source

All‐Solution‐Processed Perovskite Light‐Emitting Transistors Enabled by a Fully Organic Architecture

Advanced Electronic Materials, EarlyView.
Fully solution‐processed light‐emitting transistors based on CsPbBr3 perovskite nanocrystals (Pe‐LETs) are demonstrated using an all‐organic platform. By optimizing film formation and device integration, the Pe‐LETs achieve bright green emission with excellent color purity and a peak external quantum efficiency of 4.17 × 10−3 %, marking a step forward ...
Kelment Zahoaliaj, Alice Fappani, Francesca Pallini, Valentina Bellotti, Nicolò Quaresima, Margherita Bolognesi, Mario Prosa, Luca Beverina, Stefano Toffanin   +8 more
wiley   +1 more source