Results 231 to 240 of about 83,993 (296)

Enhancement in Performance and Reliability of Fully Transparent a-IGZO Top-Gate Thin-Film Transistors by a Two-Step Annealing Treatment. [PDF]

Nanomaterials (Basel)
Zheng S, Wang C, Lv S, Dong L, Li Z, Xin Q, Song A, Zhang J, Li Y.   +8 more
europepmc   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

Annealing Study on Praseodymium-Doped Indium Zinc Oxide Thin-Film Transistors and Fabrication of Flexible Devices. [PDF]

Micromachines (Basel)
Wu Z, Ning H, Li H, Wei X, Luo D, Yuan D, Liang Z, Su G, Yao R, Peng J.   +9 more
europepmc   +1 more source

Hydrogen‐State‐Engineered Oxide Semiconductor Channels Enabling Reliable 2T0C DRAM Operation

Advanced Electronic Materials, EarlyView.
We introduce a three‐step hydrogen annealing method for oxide semiconductor devices that modulates hydrogen incorporation and its passivation behavior. Consequently, interface traps are suppressed, whereas the mobility, reliability, and data retention of the IGO‐based 2T0C DRAM are simultaneously improved.
Jun‐Yeoub Lee, Taewon Hwang, Su‐Hwan Choi, Hye‐Jin Oh, Chang‐Kyun Park, Jin‐Seong Park   +5 more
wiley   +1 more source

High-Mobility, High-Photostability Tetravalent-Terbium-Doped Indium-Tin-Zinc-Oxide Thin-Film Transistors with a Stacked-Channel Structure. [PDF]

ACS Omega
Su H, Lan L, Xu J, Zhou Q, Li Y, Zeng D, Yang S, Chen B, Peng J.   +8 more
europepmc   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

Exploring Light Stability and Trapping Mechanisms in Organic Thin-Film Transistors for High-Brightness MicroLED Integration. [PDF]

Materials (Basel)
Tsai CH, Wu YE, Kuo CW, Chang TC, Chen LY, Chen FC, Kuo HC.   +6 more
europepmc   +1 more source

Real-Time and Highly Sensitive Detection of Matrix Metalloproteinase 9 (MMP-9) in Tears Using Aptamer Functionalized Electrolyte-Gated IGZO Thin-Film Transistors. [PDF]

ACS Appl Mater Interfaces
Hwang C, Lee JH, Kim DK, Na KS, Kim DY.
europepmc   +1 more source

Electrical Characteristics of Solution-Based Thin-Film Transistors with a Zinc-Tin Oxide/Carbon Nanotube Stacked Nanocomposite Active Layer. [PDF]

Nanomaterials (Basel)
Kim YJ, Choi WS.
europepmc   +1 more source

Performance enhancement of InSnZnO thin-film transistors by modifying the dielectric-semiconductor interface with colloidal quantum dots. [PDF]

Nanoscale Adv
Chen S, Chen H, Xia C, Sun Z, Sun Z.
europepmc   +1 more source