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Effects of Deposition Power and Annealing Temperature on Indium Zinc Oxide (IZO) Film's Properties and Their Applications to the Source-Drain Electrodes of Amorphous Indium Gallium Zinc Oxide (a-IGZO) Thin-Film Transistors (TFTs). [PDF]
Nanomaterials (Basel)Lee YS +5 more
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Effect of Deposition Temperature on Zn Interstitials and Oxygen Vacancies in RF-Sputtered ZnO Thin Films and Thin Film-Transistors. [PDF]
Materials (Basel)Muthusamy S +3 more
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Electronics and Power, 1969
In recent years, new knowledge of the solid state and the scientific study of surfaces and interfaces have resulted in a rapid development of the thin-film field-effect transistor. The t.f.t. can be formed on inexpensive substrates, such as glass and paper, and its future could lie in its use as a really cheap device of moderate performance, made with ...
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In recent years, new knowledge of the solid state and the scientific study of surfaces and interfaces have resulted in a rapid development of the thin-film field-effect transistor. The t.f.t. can be formed on inexpensive substrates, such as glass and paper, and its future could lie in its use as a really cheap device of moderate performance, made with ...
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Microelectronics Reliability, 2002
It was expected that hydrogenated amorphous silicon thin film transistors (alpha-Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD protection circuit.
Tošić Golo, N. +2 more
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It was expected that hydrogenated amorphous silicon thin film transistors (alpha-Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD protection circuit.
Tošić Golo, N. +2 more
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An adaptive thin film transistor
1966 International Electron Devices Meeting, 1966A thin film transistor (TFT) is described and demonstrated whose transfer characteristic can be reversibly adapted by a short duration voltage pulse applied to a high impedance gate electrode. The device is a four terminal-two gate structure: A source, drain, and insulator gate contact form the basic TFT while the amount of polarity of the polarization
S.S. Perlman, K.H. Ludewig
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Chemical Society Reviews, 2010
Over the past 20 years, organic transistors have developed from a laboratory curiosity to a commercially viable technology. This critical review provides a short summary of several important aspects of organic transistors, including materials, microstructure, carrier transport, manufacturing, electrical properties, and performance limitations (200 ...
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Over the past 20 years, organic transistors have developed from a laboratory curiosity to a commercially viable technology. This critical review provides a short summary of several important aspects of organic transistors, including materials, microstructure, carrier transport, manufacturing, electrical properties, and performance limitations (200 ...
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Advanced Materials, 2009
AbstractThin‐film transistors (TFTs) matured later than silicon integrated circuits, but in the past 15 years the technology has grown into a huge industry based on display applications, with amorphous and polycrystalline silicon as the incumbent technology. Recently, an intense search has developed for new materials and new fabrication techniques that
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AbstractThin‐film transistors (TFTs) matured later than silicon integrated circuits, but in the past 15 years the technology has grown into a huge industry based on display applications, with amorphous and polycrystalline silicon as the incumbent technology. Recently, an intense search has developed for new materials and new fabrication techniques that
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Solvent-gated thin-film-transistors
Physical Chemistry Chemical Physics, 2017TFTs gated through highly polar solvents have a salt independent response while for low polarity solvents the TFT current increases with salt. This was accounted for by the different contributions of Helmholtz and Guy-Chapman electrical double layers to the capacitance.
Kyriaki Manoli +6 more
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Semi-Insulating Polysilicon Thin-Film Transistor: A Proposed Thin-Film Transistor
Japanese Journal of Applied Physics, 1995We propose here two thin-film transistors (TFTs) using SIPOS (semi-insulating polysilicon) film. The first, named the homo TFT, has SIPOS film as its channel, and the second, named the hetero TFT, has poly-Si film as its channel and SIPOS film as its source and drain electrodes. Possible advantages of these TFTs have been discussed. The SIPOS film
Kwangsoo Choi +1 more
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2015
Thin-film transistors (TFTs) are key elements for thin film electronics, being their most significant application the pixel switching elements on flat panel displays (FPDs). Semiconductor materials enabling faster TFTs, such as lowtemperature polycrystalline silicon (LTPS) or transparent semiconducting oxides (TSOs), hold the promise of expanding TFT ...
Ana Paula Pinto Correia +2 more
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Thin-film transistors (TFTs) are key elements for thin film electronics, being their most significant application the pixel switching elements on flat panel displays (FPDs). Semiconductor materials enabling faster TFTs, such as lowtemperature polycrystalline silicon (LTPS) or transparent semiconducting oxides (TSOs), hold the promise of expanding TFT ...
Ana Paula Pinto Correia +2 more
openaire +1 more source