Results 81 to 90 of about 1,315,436 (317)

Impact of crystallisation processes on depth profile formation in sol-gel PbZr(0.52)Ti(0.48)O3 thin films [PDF]

open access: yes, 2013
This study revealed the influence of crystallisation processes on the homogeneity of the sol‐gel PbZr0·52Ti0·48O3 thin films, allowing identification and further optimisation of thin film performance.
Zhang, Qi   +18 more
core   +1 more source

Low-temperature sintering and microwave dielectric properties of CaMg1−x Li2x Si2O6 (x = 0−0.3) ceramics

open access: yesJournal of Advanced Ceramics, 2020
In this study, low-temperature fired CaMg1−x Li2x Si2O6 microwave dielectric ceramics were prepared via the traditional solid-state reaction method. In this process, 0.4 wt% Li2CO3-B2O3-SiO2-CaCO3-Al2O3 (LBSCA) glass was added as a sintering aid.
Fangyi Huang   +4 more
doaj   +1 more source

Piezoelectric Thin Films

open access: yesJournal of the Ceramic Society of Japan, 1991
Films of ZnO, AlN, LiNbO3, Bi12PbO19, K3Li2Nb5O15, PbTiO3, PZT, Li2B4O7 and Ta2O5 have been fabricated mainly by rf magnetron sputtering. Among these films, the ZnO piezoelectric films have been widely put into practical uses.The AlN films have been also studied along with ZnO films due to its higher ultrasonic velocity, higher electrical resistance ...
openaire   +2 more sources

Enhanced Strength and Corrosion Resistance of Ti‐13Nb‐12Ta‐10Zr‐4Sn Alloy by Aging Treatment

open access: yesAdvanced Engineering Materials, EarlyView.
This work systematically investigates the effect of aging treatment on mechanical properties and corrosion behavior of vacuum arc‐melted Ti‐13Nb‐12Ta‐10Zr‐4Sn alloy. Owing to the increased α″ martensite, strength and corrosion resistance were significantly enhanced by aging treatment.
Yuhua Li   +5 more
wiley   +1 more source

Surfaces and thin films of fullerenes

open access: yes, 2012
We review the basic properties of fullerene thin films, focusing on issues such as morphology, electronic structure, conduction and optical properties, and phase transitions.
Rudolf, Petra   +2 more
core   +1 more source

Ultra-Low Specific On-resistance Lateral Double-Diffused Metal-Oxide-Semiconductor Transistor with Enhanced Dual-Gate and Partial P-buried Layer

open access: yesNanoscale Research Letters, 2019
An ultra-low specific on-resistance (R on,sp) lateral double-diffused metal-oxide-semiconductor transistor (LDMOS) with enhanced dual-gate and partial P-buried layer is proposed and investigated in this paper.
Zhuo Wang   +5 more
doaj   +1 more source

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction

open access: yesNanoscale Research Letters, 2020
An AlGaN/GaN Schottky barrier diode (SBD) with double-heterojunction is theoretically and experimentally investigated on the GaN/AlGaN/GaN/Si-sub. The two-dimensional hole gas (2DHG) and electron gas (2DEG) are formed at the GaN-top/AlGaN and AlGaN/GaN ...
Tao Sun   +4 more
doaj   +1 more source

Direct Metal Deposition of Graphene–Ti28Nb35.4Zr Matrix Composites With Enhanced Mechanical, Corrosion, and Biocompatibility Properties for Bone Implants

open access: yesAdvanced Engineering Materials, EarlyView.
Graphene nanoplatelet (0.1 wt.%) reinforcement significantly enhances the performance of β Ti‐28Nb‐35.4Zr alloy. Grain refinement, reduced water contact angle, and improved surface characteristics promote osteoblast adhesion and complete surface coverage after 7 days.
Khurram Munir   +5 more
wiley   +1 more source

Influence of Sn and Al Doping on ZnO thin films: A Study of Structural, Optical, and Langmuir Adsorption Properties for Photocatalytic Applications [PDF]

open access: yesIranian Journal of Materials Science and Engineering
Zinc oxide (ZnO) thin films have garnered significant interest for their applications in optoelectronics and environmental remediation due to their exceptional optical, electrical, and photocatalytic properties.
Aicha Kater   +8 more
doaj  

Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE

open access: yesNanoscale Research Letters, 2018
Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE).
Aihua Zhong   +7 more
doaj   +1 more source

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