Results 31 to 40 of about 83,894 (197)
Growth of indium-incorporated κ-Ga2O3 thin film lattice-matched to the ε-GaFeO3 substrate
Materials Letters: X, 2022 Ga2O3 has attracted significant attention for various applications such as power-switching applications and deep-ultraviolet optoelectronics. In this study, we demonstrated a lattice-matching κ-(In1−xGax)2O3 thin film grown on an ε-GaFeO3 substrate via ...
Hiroyuki Nishinaka +4 more
doaj +1 more source
Gas Sensing with h-BN Capped MoS2 Heterostructure Thin Film Transistors
, 2015 We have demonstrated selective gas sensing with molybdenum disulfide (MoS2) thin films transistors capped with a thin layer of hexagonal boron nitride (h-BN). The resistance change was used as a sensing parameter to detect chemical vapors such as ethanol,
Balandin, A. A. +4 more
core +1 more source
Fully rubbery integrated electronics from high effective mobility intrinsically stretchable semiconductors [PDF]
, 2019 An intrinsically stretchable rubbery semiconductor with high mobility is critical to the realization of high-performance stretchable electronics and integrated devices for many applications where large mechanical deformation or stretching is involved ...
Kim, Hae-Jin +5 more
core +1 more source
Synthesis of thin-film black phosphorus on a flexible substrate
, 2015 We report a scalable approach to synthesize a large-area (up to 4 mm) thin black phosphorus (BP) film on a flexible substrate. We first deposited a red phosphorus (RP) thin-film on a flexible polyester substrate, followed by its conversion to BP in a ...
Cha, Judy +10 more
core +1 more source
, 2007 We report on organic field-effect transistors with unprecedented resistance against gate bias stress. The single crystal and thin-film transistors employ the organic gate dielectric Cytop(TM).
Batlogg, Bertram +4 more
core +1 more source
Thermopower measurements on pentacene transistors [PDF]
, 2006 We present the first thermoelectric measurements on pentacene field effect transistors. We report high values of the Seebeck coefficient at room temperature between 240 and 500 micro V/K depending on the dielectric surface treatment.
Bussac, Marie-Noelle +4 more
core +1 more source
Thickness Effect on Operational Modes of ZnGa2O4 MOSFETs
IEEE Journal of the Electron Devices Society, 2018 The device mechanism from depletion to enhancement mode for ZnGa2O4 metal-oxide semiconductor field effect transistors (MOSFETs) grown on the sapphire substrate by metalorganic chemical-vapor deposition was studied. It was found that the thickness of the
Li-Chung Cheng +2 more
doaj +1 more source
Photo-FETs: phototransistors enabled by 2D and 0D nanomaterials [PDF]
, 2016 The large diversity of applications in our daily lives that rely on photodetection technology requires photodetectors with distinct properties. The choice of an adequate photodetecting system depends on its application, where aspects such as spectral ...
Konstantatos, Gerasimos, Kufer, Dominik
core +2 more sources
New Compact Modeling Solutions for Organic and Amorphous Oxide TFTs
IEEE Journal of the Electron Devices Society, 2021 We review recent compact modeling solutions for Organic and Amorphous Oxide TFTs (OTFTs and AOS TFTs, respectively), which were developed, under the framework of the EU-funded project DOMINO, to address issues specifically connected to the physics of ...
Benjamin Iniguez +14 more
doaj +1 more source
Gate Capacitance Coupling of Singled-walled Carbon Nanotube Thin-film Transistors
, 2006 The electrostatic coupling between singled-walled carbon nanotube (SWNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs) is analyzed both in the quantum limit with an analytical model and in the classical limit with finite ...
Cao, Qing +5 more
core +1 more source