Results 51 to 60 of about 83,894 (197)

Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors

Scientific Reports, 2017
Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices.
Hocheon Yoo, Matteo Ghittorelli, Dong-Kyu Lee, Edsger C. P. Smits, Gerwin H. Gelinck, Hyungju Ahn, Han-Koo Lee, Fabrizio Torricelli, Jae-Joon Kim   +8 more
doaj   +1 more source

Compact modeling of organic thin film transistors with solution processed octadecyl substituted tetrabenzotriazaporphyrin as an active layer [PDF]

, 2017
Using 70nm thick spin-coated film of newly synthesized octadecyl substituted copper tetrabenzotriazaporphyrin (10CuTBTAP) as an active layer on a highly doped silicon (110) gate electrode substrates, output characteristics and transfer characteristics of
Cammidge, Andrew N., Chambrier, Isabelle, Chaure, Nandu B., Cook, Michael J., Jiménez Tejada, Juan A., Ray, Asim K., Varo, Pilar López   +6 more
core   +3 more sources

Pentacene-Based Thin-Film Transistors With a Solution-Process Hafnium Oxide Insulator [PDF]

, 2009
—Pentacene-based organic thin-film transistors with solution-process hafnium oxide (HfOx) as gate insulating layer have been demonstrated. The solution-process HfOx could not only exhibit a high-permittivity (κ = 11) dielectric constant but also has ...
Adriyanto, Feri, Chou, Dei-Wei, Huang, Tong-Jyun, Li, Yu-Chang, Lin, Yu-Ju, Wang, Yeong-Her, Wei, Chia-Yu   +6 more
core  

Electronic structure and transport in amorphous metal oxide and amorphous metal oxy-nitride semiconductors

, 2019
Recently amorphous oxide semiconductors (AOS) have gained commercial interest due to their low-temperature processability, high mobility and areal uniformity for display backplanes and other large area applications. A multi-cation amorphous oxide (a-IGZO)
Bhowmick, Somnath, Gaur, Anshu, Nahas, Suhas, Srivastava, Juhi   +3 more
core   +1 more source

Aluminium oxide prepared by atomic layer deposition in organic thin-film transistors operating at 2 V : comparison with UV-ozone oxidation [PDF]

, 2014
Large-area, roll-to-roll fabrication of thin-film circuits demands layer thickness uniformity over large areas. Previously, a 10-nm-thick dry bi-layer dielectric based on aluminium oxide (AlOx) prepared by UV-ozone oxidation and n-octylphosphonic acid ...
Gleskova, Helena, Hannah, Stuart
core   +1 more source

Deformation-aware design of flexible strained-SiGe channel TFTs

Discover Electronics
In this study, we present a novel deformation-aware predictive modeling and design process for flexible electronic applications of strained-SiGe channel thin-film transistors using a 3D Technology CAD simulation framework.
C. K. Maiti, Taraprasanna Dash
doaj   +1 more source

Numerical simulation and compact modeling of low voltage pentacene based OTFTs

Journal of Science: Advanced Materials and Devices, 2019
As organic thin film transistors (OTFTs) are poised to play a key role in flexible and low-cost electronic applications, there is a need of device modeling to support technology optimization and circuit design.
A.D.D. Dwivedi, S.K. Jain, Rajeev Dhar Dwivedi, Shubham Dadhich   +3 more
doaj   +1 more source

Improved charging phenomenon with a modified barrier structure for flexible displays fabricated on polyimide substrates

Electronics Letters, 2021
In a previous study, the authors investigated that abnormal Vth behaviour could occur due to polyimide charging when a voltage was applied to the gate in thin film transistors fabricated on polyimide substrates.
H.J. Kim, J.M. Park, C.W. Byun, S.R. Bak, Y.J. Jung, C.H. Han, J.M. Yoo, S.K. Kim, P.H. Choi, J.H. Lee, J.K. Song, B.D. Choi   +11 more
doaj   +1 more source

Reversible and irreversible trapping at room temperature in poly(thiophene) thin-film transistors

, 2005
We measured the bias stress characteristics of poly(thiophene) semi-crystalline thin-film transistors (TFTs) as a function stress times, gate voltages and duty-cycles.
A. Salleo, F. Endicott, R. A. Street, Rep D. B. A.   +3 more
core   +1 more source

Micro‐Engraving UV‐Sensitive Thin‐Film Transistor from Metal–Metal Oxide Nanoparticles with Band‐Gap Engineering

Advanced Electronic Materials
As known, n‐type inorganic semiconductor nanoparticles such as zinc oxide nanoparticles have been explored in various sensing applications, which demand high‐density electronic elements placement for rapid operation.
U Jeong Yang, Sehyun Park, Woosung Choi, Vladimir V. Tsukruk   +3 more
doaj   +1 more source