Results 61 to 70 of about 83,894 (197)

Charge Carrier Distribution in Low-Voltage Dual-Gate Organic Thin-Film Transistors

open access: yesApplied Sciences, 2018
Dual-gate organic thin-film transistors (DGOTFTs), which exhibit better electrical properties, in terms of on-current and subthreshold slope than those of single-gate organic thin-film transistors (OTFTs) are promising devices for high-performance and ...
Rei Shiwaku   +5 more
doaj   +1 more source

High-Mobility Pentacene-Based Thin-Film Transistors With a Solution-Processed Barium Titanate Insulator [PDF]

open access: yes, 2011
—Pentacene-based organic thin-film transistors (OTFTs) with solution-processed barium titanate (Ba1.2Ti0.8O3) as a gate insulator are demonstrated. The electrical properties of pentacene-based TFTs show a high field-effect mobility of 8.85 cm2 · V−1 ...
Adriyanto, Feri   +5 more
core  

Functionalized MXene ink enables environmentally stable printed electronics

open access: yesNature Communications
Establishing dependable, cost-effective electrical connections is vital for enhancing device performance and shrinking electronic circuits. MXenes, combining excellent electrical conductivity, high breakdown voltage, solution processability, and two ...
Tae Yun Ko   +13 more
doaj   +1 more source

Critical Evaluation of Organic Thin-Film Transistor Models

open access: yes, 2018
Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical characteristics.
Borchert, James W.   +7 more
core   +1 more source

An Amorphous Silicon Photo TFT with Si3N4/Al2O3 or HfO2 Double Layered Insulator for Digital Imaging Applications

open access: yesJournal of Microwaves, Optoelectronics and Electromagnetic Applications
This paper focuses on amorphous silicon photo thin-film transistors with double layered insulator using Si3N4/Al2O3 or HfO2 as candidates for the succession of Si3N4 as a traditional insulator in the fabrication of hydrogenated amorphous silicon thin ...
Siham Belkacemi, Zoubeida Hafdi
doaj   +1 more source

Design and Fabrication of Cylindrical Fiber Backplanes with 2T1C Pixel Circuits for Truly Wearable Woven Displays

open access: yesSmall Structures
This study proposes a comprehensive approach to the fabrication of fiber‐based thin‐film transistor (TFT) arrays for active matrix applications. The study utilizes a direct patterning method with metal masks on cylindrical fiber substrates, which ...
Jiseong Lee   +5 more
doaj   +1 more source

Chemical bonds in nitrogen-doped amorphous InGaZnO thin film transistors

open access: yesResults in Physics, 2018
We investigated the chemical bonds in nitrogen-doped amorphous InGaZnO (a-IGZO:N) thin films with an X-ray photoelectron spectrometer (XPS). The doped nitrogen atoms preferentially combined with Ga cations and formed stable GaN bonds for low nitrogen ...
Haiting Xie   +3 more
doaj   +1 more source

Copper Tin Halide p‐Type TFT Enabled Solution Processed Monolithic 3D CMOS Circuits

open access: yesAdvanced Electronic Materials
A critical requirement for low‐power microelectronics is the construction of logic circuits using complementary devices. In pursuit of low‐power solution‐processed thin film Complementary Metal Oxide Semiconductor (CMOS) circuits, significant research is
Yutong Liu   +7 more
doaj   +1 more source

Silicon for thin-film transistors

open access: yesThin Solid Films, 2003
We are standing at the beginning of the industrialization of flexible thin-film transistor (TFT) backplanes. The two important research directions for the TFTs are (i) processability on flexible substrates and (ii) sufficient field-effect mobilities of electrons and holes to support complementary metal insulator semiconductor operation.
Wagner, S.   +3 more
openaire   +2 more sources

Strain-Based Room-Temperature Non-Volatile MoTe$_2$ Ferroelectric Phase Change Transistor

open access: yes, 2019
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state.
Askari, Hesam   +7 more
core   +1 more source

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