Results 61 to 70 of about 28,476 (306)

NMOS Logic Inverters Based on Threshold Voltage-Tunable IGZO Transistors

, 2016
Two n-channel indium-gallium-zinc-oxide (IGZO) TFTs with varying threshold voltage (Vth) were utilized to construct the Enhancement/Depletion (E/D) NMOS inverter. Tunable Vth was achieved by capping an ultrathin SnOx film layer onto the exposed IGZO back
Liang, L. Y., Yu, J. J., Cao, HT, Cao, H. T., Wang, M.   +4 more
core   +1 more source

Micro‐Engraving UV‐Sensitive Thin‐Film Transistor from Metal–Metal Oxide Nanoparticles with Band‐Gap Engineering

Advanced Electronic Materials
As known, n‐type inorganic semiconductor nanoparticles such as zinc oxide nanoparticles have been explored in various sensing applications, which demand high‐density electronic elements placement for rapid operation.
U Jeong Yang, Sehyun Park, Woosung Choi, Vladimir V. Tsukruk   +3 more
doaj   +1 more source

Charge Carrier Distribution in Low-Voltage Dual-Gate Organic Thin-Film Transistors

Applied Sciences, 2018
Dual-gate organic thin-film transistors (DGOTFTs), which exhibit better electrical properties, in terms of on-current and subthreshold slope than those of single-gate organic thin-film transistors (OTFTs) are promising devices for high-performance and ...
Rei Shiwaku, Masataka Tamura, Hiroyuki Matsui, Yasunori Takeda, Tomohide Murase, Shizuo Tokito   +5 more
doaj   +1 more source

Electrically Readable Lateral Flow Assay Using Organic Transistors for Diagnostic Applications

Advanced Materials, EarlyView.
Electrolyte‐gated organic field‐effect transistors (EGOFETs) are integrated with lateral flow (LF) paper fluidics to create a reusable, portable, and low‐cost point‐of‐care (PoC) diagnostic test. The devices are validated for Human Immunoglobulin G detection, achieving high sensitivity (0.1 fm), selectivity, and reproducibility with rapid results in 20–
María Jesús Ortiz‐Aguayo, Carme Martínez‐Domingo, Diego Gutiérrez, Dean Kos, Marta Mas‐Torrent   +4 more
wiley   +1 more source

Role of the Recombination Zone in Organic Light‐Emitting Devices

Advanced Materials, EarlyView.
This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley   +1 more source

Kelvin force microscopy of polymer and small molecule thin-film transistors

, 2011
By their nature, scanning probe microscopy (SPM) measurements are ideally suited to the study of organic thin-film transistors (TFTs). In Chapter 3 surface potential measurements are made on TFTs made from the polymer pBTTT.
Bain, Stephen
core  

Laser transfer of sol-gel ferroelectric thin films using an ITO release layer [PDF]

, 2011
A new laser transfer process is reported which allows damage-free transfer of ferroelectric thin films from a growth substrate directly to a target substrate.
Bansal, A., D. Bhattacharyya, Yeatman, E. M., A. Bansal, R.V. Wright, Bhattacharyya, Debabrata, P.B. Kirby, G. Dou, Dou, G., A.S. Holmes, Hergert, R., E.M. Yeatman, R. Hergert, Holmes, A. S., Wright, Robert V., Kirby, Paul B.   +15 more
core   +1 more source

Functionalized MXene ink enables environmentally stable printed electronics

Nature Communications
Establishing dependable, cost-effective electrical connections is vital for enhancing device performance and shrinking electronic circuits. MXenes, combining excellent electrical conductivity, high breakdown voltage, solution processability, and two ...
Tae Yun Ko, Heqing Ye, G. Murali, Seul-Yi Lee, Young Ho Park, Jihoon Lee, Juyun Lee, Dong-Jin Yun, Yury Gogotsi, Seon Joon Kim, Se Hyun Kim, Yong Jin Jeong, Soo-Jin Park, Insik In   +13 more
doaj   +1 more source

An Amorphous Silicon Photo TFT with Si3N4/Al2O3 or HfO2 Double Layered Insulator for Digital Imaging Applications

Journal of Microwaves, Optoelectronics and Electromagnetic Applications
This paper focuses on amorphous silicon photo thin-film transistors with double layered insulator using Si3N4/Al2O3 or HfO2 as candidates for the succession of Si3N4 as a traditional insulator in the fabrication of hydrogenated amorphous silicon thin ...
Siham Belkacemi, Zoubeida Hafdi
doaj   +1 more source

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

Advanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu, Yingxue An, Luigi Fabiano, Qifan Li, Qingqing Wang, Feng Zhang, Wenlong Jin, Miao Xiong, Junpeng Ji, Ugo Bruno, Grzegorz Greczynski, Grazia Maria Lucia Messina, Xianjie Liu, Chi‐Yuan Yang, Simone Fabiano   +14 more
wiley   +1 more source