Results 71 to 80 of about 83,894 (197)

CNT thin films based on epoxy mixtures: fabrication, electrical characteristics

Chimica Techno Acta
The simple scaling of silicon transistors no longer ensures the advantages of high energy efficiency, driving research into nanotechnologies beyond silicon.
Timur Yumalin, Timur Salikhov, Biltu Mahato, Alexey Shiverskii, Sergey Abaimov, Renat Salikhov   +5 more
doaj   +1 more source

Growth of large-size-two-dimensional crystalline pentacene grains for high performance organic thin film transistors

AIP Advances, 2012
New approach is presented for growth of pentacene crystalline thin film with large grain size. Modification of dielectric surfaces using a monolayer of small molecule results in the formation of pentacene thin films with well ordered large crystalline ...
Chuan Du, Liqiang Li, Wenchong Wang, Jidong Zhang, Donghang Yan, Wenping Hu, Harald Fuchs, Lifeng Chi   +7 more
doaj   +1 more source

Electric field modulation of thermopower for transparent amorphous oxide thin film transistors

, 2010
To clarify the electronic density of states (DOS) around the conduction band bottom for state of the art transparent amorphous oxide semiconductors (TAOSs), InGaZnO4 and In2MgO4, we fabricated TAOS-based transparent thin film transistors (TTFTs) and ...
Ikuhara, Yuichi, Kato, Takeharu, Koide, Hirotaka, Koumoto, Kunihito, Nagao, Yuki, Ohta, Hiromichi, Takasaki, Yuka, Umemura, Tomonari   +7 more
core   +1 more source

Strained Organic Thin‐Film Single Crystals for High‐Mobility and High‐Frequency Transistors

Advanced Electronic Materials
Transistors fabricated from thin‐film single crystals of organic semiconductors (OSCs) have exhibited high mobility exceeding 10 cm2 V−1 s−1 and show compatibility with low‐cost solution processing.
Mizuki Abe, Yu Yamashita, Taiki Sawada, Tatsuyuki Makita, Shohei Kumagai, Shun Watanabe, Jun Takeya   +6 more
doaj   +1 more source

Nanocrystalline Silicon Thin Film Transistors

ECS Meeting Abstracts, 2010
Abstract not Available.
openaire   +1 more source

Drain-Induced-Barrier-Lowing-Like Effect Induced by Oxygen-Vacancy in Scaling-Down via-Contact Type Amorphous InGaZnO Thin-Film Transistors

IEEE Journal of the Electron Devices Society, 2018
This investigation considers a method to ameliorate drain induced barrier lowing behavior in amorphous-indium-gallium-zinc-oxide thin-film transistors. The Vth is found to shift negatively when increasing the ID-VG measurement condition VD from 0.1 to 15
Chung-I. Yang, Ting-Chang Chang, Po-Yung Liao, Li-Hui Chen, Bo-Wei Chen, Wu-Ching Chou, Guan-Fu Chen, Sung-Chun Lin, Cheng-Yen Yeh, Cheng-Ming Tsai, Ming-Chang Yu, Shengdong Zhang   +11 more
doaj   +1 more source

Defect healing at room temperature in pentacene thin films and improved transistor performance

, 2007
We report on a healing of defects at room temperature in the organic semiconductor pentacene. This peculiar effect is a direct consequence of the weak intermolecular interaction which is characteristic of organic semiconductors.
A. Roth, Bertram Batlogg, E. A. Silinsh, Fabian Meier, Kurt Mattenberger, M. Grünewald, Wolfgang L. Kalb   +6 more
core   +1 more source

Transparent Structures for ZnO Thin Film Paper Transistors Fabricated by Pulsed Electron Beam Deposition

Micromachines
Thin film transistors on paper are increasingly in demand for emerging applications, such as flexible displays and sensors for wearable and disposable devices, making paper a promising substrate for green electronics and the circular economy.
Florin Gherendi, Daniela Dobrin, Magdalena Nistor   +2 more
doaj   +1 more source

Black phosphorus: narrow gap, wide applications

, 2015
The recent isolation of atomically thin black phosphorus by mechanical exfoliation of bulk layered crystals has triggered an unprecedented interest, even higher than that raised by the first works on graphene and other two-dimensional, in the nanoscience
Castellanos-Gomez, Andres
core   +1 more source

Field-Effect Transistors on Tetracene Single Crystals

, 2003
We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of $0.4 \ cm^2/Vs$. The non-monotonous
A. F. Morpurgo, Campbell I. H., R. W. I. de Boer, T. M. Klapwijk   +3 more
core   +2 more sources