Nanoscale Research Letters, 2019 An ultra-low specific on-resistance (R on,sp) lateral double-diffused metal-oxide-semiconductor transistor (LDMOS) with enhanced dual-gate and partial P-buried layer is proposed and investigated in this paper.
Zhuo Wang +5 more
doaj +1 more source
High-Voltage Polarization-Superjunction GaN HEMT With Built-In SBD for Low Reverse Conduction Loss
IEEE Journal of the Electron Devices Society, 2022 A GaN Reverse-Conducting HEMT (RC-HEMT) is proposed and fabricated on the GaN/AlGaN/GaN platform. It features an integrated Schottky barrier diode (SBD) to realize reverse conduction and the double-heterojunction to enhance breakdown voltage (BV ...
Tao Sun +7 more
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Linear and Nonlinear Optical Properties of Mn doped Benzimidazole Thin Films
, 2014 In the present work, the Mn doped benzimidazole (BMZ) thin films were prepared by simple chemical bath deposition technique. The material was directly deposited as thin film on glass substrates and the metal concentration in the solution was varied in ...
Babu, R. Ramesh +3 more
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Effect of Substrate Temperature on Structural and Optical Properties of Nanocrystalline CdTe Thin Films Deposited by Electron Beam Evaporation [PDF]
Журнал нано- та електронної фізики, 2013 Nanocrystalline Cadmium Telluride (CdTe) thin films were deposited onto glass substrates using electron beam evaporation technique. The effect of substrate temperature on the structural, morphological and optical properties of CdTe thin films has been ...
M. Rigana Begam +5 more
doaj
Resistivity in Co-doped Ba-122: comparison of thin films and single crystals
, 2014 The temperature dependence of the resistivity of epitaxial Ba(Fe_(1-x)Co_x)2As2 thin films (with nominal doping x = 0.08, 0.10 and 0.15) has been analyzed and compared with analogous measurements on single crystals taken from literature.
Daghero, D. +7 more
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Unraveling Bulk and Grain Boundary Electrical Properties in La0.8Sr0.2Mn1-yO3 Thin Films
, 2019 Grain boundaries in Sr-doped LaMnO3 thin films have been shown to strongly influence the electronic and oxygen mass transport properties, being able to profoundly modify the nature of the material.
Burriel, Monica +8 more
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High quality YBa2Cu3Ox ultra-thin films and Y/Pr/Y multilayers made by a modified RF-magnetron sputtering technique [PDF]
, 1990 High quality ĉ-axis oriented thin and ultra-thin films have been grown in situ on (100) surfaces of ZrO2, SrTiO3 and MgO. Sharp transitions were observed with Tc,zero of 87–91 K for films thicker than 70 Å.
Aarnink, W.A.M. +3 more
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Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE
Nanoscale Research Letters, 2018 Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE).
Aihua Zhong +7 more
doaj +1 more source
Nanoscale Research Letters, 2020 An AlGaN/GaN Schottky barrier diode (SBD) with double-heterojunction is theoretically and experimentally investigated on the GaN/AlGaN/GaN/Si-sub. The two-dimensional hole gas (2DHG) and electron gas (2DEG) are formed at the GaN-top/AlGaN and AlGaN/GaN ...
Tao Sun +4 more
doaj +1 more source
Crystal orientation and thickness dependence of superconductivity on tetragonal FeSe1-x thin films
, 2009 Superconductivity was recently found in the simple tetragonal FeSe structure. Recent studies suggest that FeSe is unconventional, with the symmetry of the superconducting pairing state still under debate.
Chang, A. M. +9 more
core +1 more source