Application of Stress-strength Interference Model in Failure Analysis of Power Semiconductor Device
The direct reason of power semiconductor device failure from mechanical stress is that outside stress comes bigger than the strength of the device, which indirectly causes upload of electricity stress or heat stress and ultimately brings about failure of
ZHANG Xiying, YAN Ji, REN Yadong
doaj
Multiterminal High‐Voltage Direct Current Projects: A Comprehensive Assessment and Future Prospects
ABSTRACT Multiterminal high‐voltage direct current (MT‐HVDC) systems are an important part of modern power systems, addressing the need for bulk power delivery and efficient renewable energy integration. This paper provides a comprehensive overview of recent advances in MT‐HVDC technology, including launched projects and ongoing initiatives.
Mohammad Hossein Mousavi +3 more
wiley +1 more source
High Voltage DC Active Current Injection to Simulate Geomagnetically Induced Currents in New Zealand
Abstract This study investigates the effects of geomagnetically induced currents (GIC) on New Zealand's electrical infrastructure via an intentional ground injection of direct current (DC) from a high voltage DC converter station. GIC manifests as quasi‐DC currents within power systems, potentially causing transformer saturation, increased reactive ...
Soren Subritzky +11 more
wiley +1 more source
Research on Equivalent Circuit Model of HVDC Valve and Calculation of Thyristor Junction Temperature
For the difference of thyristor junction temperature at all levels in the transducer valve assembly in the series water circuit, an equivalent model of thyristor junction temperature calculation for the valve assembly is established, and PLECS simulation
Wei Yao +5 more
doaj +1 more source
Thyristor rectifiers with digital control units based on microcontroller 80C196 for uninterruptible power supply systems [PDF]
In this paper the thyristor rectifiers with digital control units developed in Institute 'Nikola Tesla' are presented. Digital control units of the types 'DRI 05' and 'DRI 07' are based on microcontroller 'Intel' 80C196KB16.
Vukić Vladimir
doaj +1 more source
A Hybrid Ultra‐High Voltage DC Transformer With Digital Twin‐Driven Operation and Control
This study introduces a digital twin‐driven hybrid ultra‐high‐voltage DC transformer (UHVDCT) that combines high‐capacity LCCs with low‐capacity MMCs at the UHV side. This innovative topology reduces MMC requirements by 32.9% while ensuring stable power flow and dynamic reactive balance through real‐time virtual‐physical synchronization.
Ling Xu +6 more
wiley +1 more source
Modified‐Source Intrinsic Bulk Nanoscale Planar MOSFET
The modified‐source MOSFET (MS‐MOSFET) is an intrinsic bulk planar MOSFET to operate in nanoscale range. Due to the simple structure of this novel device, it can be fabricated using low‐cost CMOS technology. As FinFETs entail a complex and expensive structure, the concept of the modified‐source transistor presents a promising approach for cost ...
Iraj Sheikhian
wiley +1 more source
To address the poor dynamic response and limited disturbance rejection of conventional dual‐loop PI control in three‐phase voltage source PWM rectifiers (VSRs), this paper proposes a composite control strategy featuring an improved sliding mode control (SMC) for the voltage outer‐loop and a back‐propagation neural network (BP‐PID) controller for the ...
Xinyue Liang, Cheng Liu, Jiaqi Li
wiley +1 more source
Direct current (DC)–DC converters are the backbone of electric vehicle (EV) power trains, enabling efficient and bidirectional energy flow between the battery, high‐voltage (HV) DC link, and auxiliary rails under tight isolation, gain, ripple, and electromagnetic interference (EMI) constraints.
Abhilash Sakhare +3 more
wiley +1 more source
Research on Voltage Regulation Methods for Flexible On‐Load Tap‐Changing Transformers
The control system determines whether the output voltage magnitude of the voltage source converter (VSC) is high, low or constant and generates the corresponding pulse signals. Each pulse is generated at the valve‐triggering instant, with its width corresponding to the commutation angle.
Weimei Zhao, Qiao Guangyao
wiley +1 more source

