Results 221 to 230 of about 22,219,032 (293)

Detecting Anomalous Cell Behavior in Electrochemical Battery Testing Using Machine Learning

open access: yesAdvanced Engineering Materials, EarlyView.
Machine‐learning‐based screening enables automated identification of anomalous battery cells from complementary electrochemical tests. A curated battery database supports configuration‐aware comparison of rate‐capability and impedance data. Supervised classification of rate‐test data achieves 90% accuracy, while CNN‐VAE‐based impedance analysis reaches
Minu Rose   +7 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Editorial: Innovative imaging in neurological disorders: bridging engineering and medicine. [PDF]

open access: yesFront Neurosci
Elbatanony A   +4 more
europepmc   +1 more source

Laser‐Induced Graphene from Waste Almond Shells

open access: yesAdvanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova   +9 more
wiley   +1 more source

AI in academic writing: Transparency and ethics. [PDF]

open access: yesJ Family Med Prim Care
Shah S, Verma NR, Mohapatra E.
europepmc   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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