Results 141 to 150 of about 19,502 (174)
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Mass accuracy—TOF-SIMS

Applied Surface Science, 2006
A study is presented of the factors affecting the calibration of the mass scale for time-of-flight SIMS (TOF-SIMS). The effect of the ion kinetic energy, emission angle and other instrumental operating parameters on the measured peak position are determined. This shows clearly why molecular and atomic ions have different relative peak positions and the
F.M. Green, I.S. Gilmore, M.P. Seah
openaire   +1 more source

Segment fusion of ToF-SIMS images

Biointerphases, 2016
The imaging capabilities of time-of-flight secondary ion mass spectrometry (ToF-SIMS) have not been used to their full potential in the analysis of polymer and biological samples. Imaging has been limited by the size of the dataset and the chemical complexity of the sample being imaged.
Tammy M, Milillo   +4 more
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Biomedical studies by TOF-SIMS imaging

Biointerphases, 2014
Imaging by secondary ion mass spectrometry coupled to time-of-flight mass analysis (TOF-SIMS) is a method of which the applications have greatly increased since 10 years. Taking advantage of the development of cluster ion sources, TOF-SIMS offers images of molecular ions at a micrometer lateral resolution or slightly below and does not require complex ...
Claudia, Bich   +2 more
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DNA sequencing with ToF‐SIMS

Surface and Interface Analysis, 2002
Abstract Nucleic acid chips are based on the method of sequencing by hybridization, where unknown DNA fragments are hybridized to complementary nucleic acid sequences that are immobilized on a solid surface in an array format. One novel approach is to use peptide nucleic acid (PNA) biosensor chips.
H. F. Arlinghaus   +5 more
openaire   +1 more source

Genome diagnostics with TOF-SIMS

Applied Surface Science, 2003
Abstract A novel deoxyribonucleic acid (DNA) sequencing method is described that uses peptide nucleic acid (PNA) biosensor chips. PNA is a synthesized DNA analog in which both the phosphate and the deoxyribose of the DNA backbone are replaced by polypeptides. The hybridization properties of PNA to DNA are comparable to those of DNA to DNA.
H.F. Arlinghaus   +3 more
openaire   +1 more source

Perfluoropolyethers:  Analysis by TOF-SIMS

Macromolecules, 1996
TOF-SIMS spectra of the following perfluoropolyethers (PFPEs) were analyzed:  Demnum-S, Krytox, Fomblin-Z, perfluoropoly(dioxolane), perfluoropoly(tetramethylene oxide), and perfluoropoly(ethylene oxide). In each case, the PFPE produced an intense negative ion spectrum with simple patterns persisting into the high-mass region surpassing the mean MW of ...
A. M. Spool, Paul H. Kasai
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TOF-SIMS investigations on weathered silver surfaces

Analytical and Bioanalytical Chemistry, 2007
Silver-coated quartz crystal microbalance (QCM) disks were treated under different environmental conditions (including changes in parameters such as relative humidity (%RH) and SO(2)/H(2)S content) in atmospheres of synthetic air and pure N(2) for 24 h in a weathering chamber. The corroded surfaces were subjected to depth profiling by a time of flight (
J, Schnöller   +5 more
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Imaging TOF-SIMS analysis of oligonucleotide microarrays

The Analyst, 2002
Single strand thiolated oligonucleotide (25-mer) was printed onto chemically modified glass and silicon surfaces. Confirmation of the level of attachment attained in each case was effected through detection by conventional confocal fluorescence microscopy.
Larisa-Emilia, Cheran   +2 more
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TOF-SIMS in cosmochemistry

Planetary and Space Science, 2001
Abstract Time-of-flight secondary ion mass spectrometry (TOF-SIMS) was introduced into cosmochemistry about a decade ago. Major advantages of TOF-SIMS compared to other ion microprobe techniques are (a) parallel detection of all secondary ions with one polarity in a single measurement—both polarities in subsequent analyses, (b) high lateral ...
openaire   +1 more source

TOF-SIMS depth profiling of SIMON

Applied Surface Science, 2003
Abstract Silicon-on-insulator (SOI) is important for VLSI and three-dimensional integrated circuits. An SOI sample fabricated by Separation by IMplanted Oxygen and Nitrogen (SIMON) was depth profiled by dual beam TOF-SIMS. The sputter and analysis beam were 1 keV Cs + and 10 keV Ar + , respectively.
Ge Xin   +5 more
openaire   +1 more source

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