Results 61 to 70 of about 12,767 (271)

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

Advanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu, Yingxue An, Luigi Fabiano, Qifan Li, Qingqing Wang, Feng Zhang, Wenlong Jin, Miao Xiong, Junpeng Ji, Ugo Bruno, Grzegorz Greczynski, Grazia Maria Lucia Messina, Xianjie Liu, Chi‐Yuan Yang, Simone Fabiano   +14 more
wiley   +1 more source

ON THE DESIGN OF NEW CMOS DO-OTA TOPOLOGIES PROVIDING HIGH OUTPUT IMPEDANCE AND EXTENDED LINEARITY RANGE

Electrica, 2005
In this paper, new realization techniques to enhance the performance of the CMOS differential output transconductance amplifiers (DO-OTAs) are proposed by combining the high-performance input and output stages given in the literature.
Burçin Serter Ergün, H. Hakan Kuntman
doaj   +2 more sources

A Very-High Frequency Solution-Processed Organic Field-Effect Transistor With Improved Voltage-Normalized Frequency of Transition. [PDF]

Adv Sci (Weinh)
Increasing the frequency at which organic electronics operate while limiting the operation voltage is key to enabling future sustainable wireless applications. This work shows p‐type organic field‐effect transistors based on a molecularly doped, small molecule/polymer blend (C8‐BTBT:C16IDT‐BT), fabricated via direct‐writing and solution‐processing ...
Losi T, van Oosterhout K, Cambiaggio M, Heeney M, He Q, Kleemann H, Luzio A, Cantatore E, Caironi M.   +8 more
europepmc   +2 more sources

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Electronically Tunable Quadrature Oscillator Employing Single Differential Difference Transconductance Amplifier [PDF]

, 2017
In this paper, we present new voltage mode quadrature oscillator, employing single differential difference transconductance amplifier. The proposed oscillator structure consists of two grounded capacitors and a single resistor.
Kacar, F., Konal, M., Yesil, A., A. Yesil, F. Kacar, M. Konal   +5 more
core   +1 more source

Monolithic 3D‐Integrated All‐Solid Ion‐Gated Carbon Nanotube Transistors With Tunable Ionic Conductance for Multi‐Timescale Reservoir Computing

Advanced Materials, EarlyView.
A dual‐timescale reservoir based on monolithically 3D (M3D)‐integrated CNT solid ion‐gated transistors is demonstrated. Tunable ionic dynamics and pulse‐engineered operation enable linear and symmetric synaptic updates. The M3D‐integrated array achieves robust temporal encoding and accurate classification of moving MNIST sequences, highlighting its ...
Haksoon Jung, Hanbin Cho, Yongwoo Lee, Seunghun Baek, Hyeongjun Kim, Yun Goo Ro, Hyunhyub Ko, Joonki Suh, Yong‐Young Noh, Jimin Kwon   +9 more
wiley   +1 more source

CMOS operational transconductance amplifiers with extended transconductance adjustment ranges

, 1991
Typescript (photocopy)VitaMajor subject: Electrical EngineeringTechniques are developed for realizing CM OS transconductance amplifiers with increased transconductance adjustment ranges.
Adams, William John
core   +1 more source

Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors

Advanced Materials, EarlyView.
Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee, Joonho Park, Seungsun Yoo, Seunghyun Yu, Mingu Kang, Seohak Park, Min Kyu Lee, Hyeongjin Lim, Dongyoung Kim, Kunwoo Roh, Sejin Kim, Kihyuk Kim, Wonbae Ahn, Kibum Kang, Yong‐Hoon Kim, Sung‐Yool Choi   +15 more
wiley   +1 more source

Ultra low-voltage low-power current conveyor transconductance amplifier [PDF]

, 2015
478-487This paper presents ultra low-voltage (LV) low-power (LP) CMOS structure for Current Conveyor Transconductance Amplifier (CCTA). The proposed structure is performed using recently presented technique named bulk-driven quasi-floating gate (BD ...
Kumngern, Montree, Khateb, Fabian, Lahiri, Abhirup, Dabbous, Salma Bay Abo, Kulej, Tomasz   +4 more
core   +2 more sources

Electropolymerized Aptasensor for Femtogram‐Level Cytokine Detection

Advanced Materials, EarlyView.
Electropolymerization of 3‐amino‐ʟ‐tyrosine creates ultrathin, smooth, and chemically robust pALT nanofilms with accessible carboxyl functionalities for direct aptamer immobilization. Integrated with fiber‐optic SPR and OECT platforms, these interfaces enable IL‐6 detection down to 100 fg mL−1 and provide a versatile route to bioelectronic sensing ...
Jiyao Yu, Renan Colucci, Rachel X. Shi, Qi Lu, Tommaso Marchesi D'Alvise, Ulrike Kraft, Christopher V. Synatschke, Tanja Weil   +7 more
wiley   +1 more source