Results 71 to 80 of about 12,767 (271)

Poly(Alkoxythiophene) Rod‐Coil Block Copolymers for Organic Electrochemical Transistors

open access: yesAdvanced Materials, EarlyView.
We present the first synthesis of poly(3‐alkoxythiophene) rod‐coil block copolymers as a new architecture for OMIECs. Incorporating PEG and PLLA coils can enhance device performance beyond the homopolymer. The figure‐of‐merit depends uniquely on coil length.
Junfu Tian   +23 more
wiley   +1 more source

Modelling Of Gaas Mesfet Output Conductance And Transconductance Frequency Dispersion

open access: yes, 1993
The output conductance and transconductance frequency dispersion phenomena of a GaAs MESFET have been modelled. A non-uniform temperature distribution between the substrate and surface channel is accounted for.
Yuan, Jiann S.
core   +2 more sources

Bioinspired Mechanosensitive Organic Artificial Neuron With Programmable Excitatory and Inhibitory Responses via Nonlinear Mechano‐Electrochemical Coupling

open access: yesAdvanced Materials, EarlyView.
Organic artificial neurons couple mechanical deformation and ionic environments through nonlinear mechano‐electrochemical dynamics. Mechanical strain and electrolyte concentration reshape their nonlinear electrical characteristics, programming excitatory or inhibitory spiking responses that mimic mechanosensitive biological neurons and enable ...
Rassen Boukraa   +4 more
wiley   +1 more source

All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response

open access: yesJournal of Nanotechnology, 2011
We report an all-printed thin-film transistor (TFT) on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT) solution that is primarily consists of semiconducting carbon ...
Guiru Gu   +15 more
doaj   +1 more source

HOT CARRIER STRESS INDUCED CHANGES IN MOST TRANSCONDUCTANCE STRUCTURE

open access: yes, 1988
An analysis of MOS transistor hot carrier degradation is presented, based upon experimental, simulated and analytical study. The transconductance curve study is shown to be a good tool for the correct characterization of the stress induced damage, and ...
C. BERGONZONI, P. CAPRARA, R. BENECCHI
core   +1 more source

Unveiling the Hidden Geometry of OECTs: Contact‐Semiconductor Overlap Driven Errors in Volumetric Capacitance

open access: yesAdvanced Materials Technologies, EarlyView.
This work examines how contact–semiconductor overlap influences volumetric capacitance extraction in organic electrochemical transistors as device dimensions shrink. It shows that neglecting overlap leads to systematic, geometry‐driven errors in capacitance values.
Renan Colucci   +7 more
wiley   +1 more source

A 1-nS 1-V Sub-1-µW Linear CMOS OTA with Rail-to-Rail Input for Hz-Band Sensory Interfaces

open access: yesSensors, 2020
The paper presents an operational transconductance amplifier (OTA) with low transconductance (0.62–6.28 nS) and low power consumption (28–270 nW) for the low-frequency analog front-ends in biomedical sensor interfaces.
Jacek Jakusz   +4 more
doaj   +1 more source

A Novel Low-Voltage Floating-Gate Cmos

open access: yes, 2007
In this paper we present an ultra lowvoltage (ULV) floating-gate (FG) transconductance amplifier The amplifier can operate at supply voltages down to 0.3V in a standard digital double poly CMOS process.
Transconductance Amplifier With
core  

Tuning Positive and Negative Transconductance in Multilayer MoS2 with Indium Contacts

open access: yes, 2022
© 2022 American Physical Society. We report unusual behavior in the transconductance of multilayer MoS2 at a low temperature. Multilayer MoS2 with indium top contacts exhibits negative transconductance at an intermediate back-gate bias and reentrant ...
Ji, Hyunjin   +6 more
core   +1 more source

Amorphous IGZO, Crystalline IGO, Amorphous IGZO Triple Active Layer With 2D Electron Gas at Both Interfaces for High Performance TFTs

open access: yesAdvanced Materials Technologies, EarlyView.
The dual‐gate coplanar a‐IGZO/C‐IGO/a‐IGZO TFT is investigated, exhibiting a high filed‐effect mobility of 53.81 cm2 V−1s−1 with excellent stability. The amorphous IGZO layer provides smooth surface, which carrier scattering and high‐quality interface between gate insulator and active layer.
Solbee Lee   +4 more
wiley   +1 more source

Home - About - Disclaimer - Privacy