Results 81 to 90 of about 12,767 (271)

Design and Analysis of Current Differencing Transconductance Amplifier

, 2018
The current-mode devices play a vital role in the designing of the analog signal processing applications. Since the introduction of these devices, the continuous improvement in the performance parameters has been the most important aspect of research. As
Kour, Raviraj
core   +1 more source

MOF-MoS2 nanosheets doped PEDOT:PSS for organic electrochemical transistors in enhanced glucose sensing and machine learning-based concentration prediction

Materials Futures
Organic electrochemical transistors (OECTs) are regarded as a promising platform for chemical and biological sensing due to their biocompatibility, cost-effectiveness and flexibility. However, maintaining long-term stability of OECTs while achieving high
Yali Sun, Yun Li, Yang Zhou, Ting Cai, Yuxuan Chen, Chao Zou, Han Song, Shenghuang Lin, Shenghua Liu   +8 more
doaj   +1 more source

Exploration and Analysis of Temperature and Performance of Compound Semiconductor-Based Junctionless GAA FET

IEEE Access
The device dimension down scaling beyond 14 nm technology node utilization of device architecture and new materials is a need of the semiconductors industry. In this paper, three materials, In $_{\mathrm {1-x}}$ GaxAs/ In $_{\mathrm {1-x}}$ GaxP, In $_{1-
Jeevanarao Batakala, Rudra Sankar Dhar, Kuleen Kumar, Arindam Biswas, Saurav Mallik, Naim Ahmad, Wade Ghribi, Ahmed Said Badawy   +7 more
doaj   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Thermally Driven Supramolecular Chirality Evolution in Low‐Bandgap Fused‐Ring Conjugated Molecules for High‐Performance NIR Circularly Polarized Light Detection

Advanced Science, EarlyView.
A supramolecular chirality evolution strategy in chiral low‐bandgap fused‐ring conjugated molecules enables high‐performance near‐infrared (NIR) circularly polarized light photodetection. Halogen substitution and thermal annealing induce chiral amplification and hierarchical ordering. Integrated into Schottky barrier vertical transistors, the optimized
Jaeyong Ahn, Kwangmin Kim, Sangwook Lee, Seul Lee, SungHyun Hur, BongSoo Kim, Joon Hak Oh   +6 more
wiley   +1 more source

Realization of Electronic OTA Amplifiers with Linear and Tunable Transconductance and its Usages in Continuous - Filters [PDF]

Journal of Intelligent Procedures in Electrical Technology, 2012
The aim of this paper is the introduction of a CMOS OTA basic block that its transconductance gain can be electronically and linearly tuned. This transconductance is proportional to the square root of the bias current.
Ebrahim Borzabadi, Hamid Reza Taghva, Homayoun Mahdavi-Nasab   +2 more
doaj  

Oxygen‐Assisted MOCVD Growth of Monolayer PtSe2 Films With Bandgap Opening for Semiconducting FET Channels

Advanced Science, EarlyView.
Monolayer PtSe2 films are successfully grown via optimized MOCVD, achieving uniform coverage over a 1.5 cm × 1.5 cm area. Oxygen‐assisted growth effectively removes carbon impurities, ensuring high film quality. Array‐level FETs based on monolayer PtSe2 channels demonstrate low off‐current and high ION/IOFF ratios, highlighting the potential of PtSe2 ...
Yuseok Kim, Hee‐Soo So, Minseok Yoo, Saeyoung Oh, Dongyoung Kim, Minseung Gyeon, Min‐Kyung Jo, Gichang Noh, Tae Soo Kim, Min‐gyu Kim, Jeongwon Park, Hyun‐Jun Chai, Minsoo Kang, Suhyun Kim, Ayoung Ham, Jaehyun Lee, Jongsun Lim, Seungwoo Song, Joon Young Kwak, Seunghwan Seo, Chang‐Soo Lee, Chang Gyoun Kim, Kibum Kang   +22 more
wiley   +1 more source

Extraction of oxide traps in III-V MOSFETs using RF transconductance measurements

, 2013
We here present simulations of the effect of border traps on the behavior of a III-V FET's transconductance with respect to frequency. We also compare simulations with a recently developed analytical model for extracting the border trap distribution ...
Lind, Erik,, Johansson, Sofia,, Lund University.   +2 more
core   +2 more sources

The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices

, 2001
There are two key points to get high transconductance of pseudomorphic HEMTS (pHEMTs) devices. From the point view of materials, the transfer efficiency of the electrons from the delta -doped AlGaAs layer to the InGaAs channel must be high.
Cao X, Zeng YP, Kong MY, Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China., Pan L, Zhu ZP, Wang BQ   +6 more
core  

Battery‐Inspired Electrochemical Synapses for Neuromorphic Applications

Advanced Science, EarlyView.
Battery‐ion‐inspired synaptic devices integrate diverse electrolyte systems (solid, ion‐gel, liquid) with transition metal oxides, two‐dimensional materials, and organic channels to regulate ion‐electron coupling. By tailoring ion transport and host interactions, these platforms enable controllable plasticity and energy‐efficient implementations for ...
Won Woo Lee, SeongCheol Jang, Wangmyung Choi, Jaewon Park, Jaehyun Hur, Hocheon Yoo, Hyun‐Suk Kim   +6 more
wiley   +1 more source