Results 151 to 160 of about 335,727 (374)

Thermal Processing Creates Water‐Stable PEDOT:PSS Films for Bioelectronics

Advanced Materials, Volume 37, Issue 13, April 2, 2025.
Instead of using chemical cross–linkers, it is shown that PEDOT:PSS thin films for bioelectronics become water‐stable after a simple heat treatment. The heat treatment is compatible with a range of rigid and elastomeric substrates and films are stable in vivo for >20 days.
Siddharth Doshi, Margaux O. A. Forner, Pingyu Wang, Salim El Hadwe, Amy T. Jin, Gerwin Dijk, Kenneth Brinson, Juhwan Lim, Antonio Dominguez‐Alfaro, Carina Yi Jing Lim, Alberto Salleo, Damiano G. Barone, Guosong Hong, Mark L. Brongersma, Nicholas A. Melosh, George G. Malliaras, Scott T. Keene   +16 more
wiley   +1 more source

Spin-Flip Transistor

, 2001
The recently developed semiclassical theory for magnetoelectronic circuits is applied to a transistor-like device consisting of a normal metal island and three magnetic terminals.
Arne Brataas, Brataas, Datta, Gerrit E.W. Bauer, Johnson, Nazarov, Nazarov, Waintal, Yuli V. Nazarov   +8 more
core   +1 more source

Advances in Photonic Materials and Integrated Devices for Smart and Digital Healthcare: Bridging the Gap Between Materials and Systems

Advanced Materials, EarlyView.
This article summarizes significant technological advancements in materials, photonic devices, and bio‐interfaced systems, which demonstrate successful applications for impacting human healthcare via improved therapies, advanced diagnostics, and on‐skin health monitoring.
Seunghyeb Ban, Hoon Yi, Jaejin Park, Yunuo Huang, Ki Jun Yu, Woon‐Hong Yeo   +5 more
wiley   +1 more source

A Compact Device Model for a Piezoelectric Nano-Transistor

Micromachines
An approximate compact model was developed to provide a convenient method of exploring the initial design space when investigating the performance of micro-electronic devices such as nano-scaled piezoelectronic transistors, where fast ball-park estimates
L. Neil McCartney, Louise E. Crocker, Louise Wright, Ivan Rungger   +3 more
doaj   +1 more source

Low noise tuned amplifier [PDF]

, 1984
A bandpass amplifier employing a field effect transistor amplifier first stage is described with a resistive load either a.c. or directly coupled to the non-inverting input of an operational amplifier second stage which is loaded in a Wien Bridge ...
Kleinberg, L. L.
core   +1 more source

High-temperature silicon-transistor computer circuits [PDF]

, 1957
James B. Angell
openalex   +1 more source

Recent Advances in Stimuli‐Responsive Materials and Soft Robotic Actuators for Bioelectronic Medicine

Advanced Materials, EarlyView.
This review explores the integration of responsive materials and soft robotic actuators with implantable electronics to address key challenges in bioelectronic medicine. By enabling shape actuation, these technologies improve deployment, adaptability, and accuracy in minimally invasive procedures.
Chaoqun Dong, George G. Malliaras
wiley   +1 more source

Transistor Convention and Exhibition [PDF]

, 1959
Faye Roberts, H.G. Bassett
openalex   +1 more source

A Charge‐Coupled Phototransistor Enabling Synchronous Dynamic and Static Image Detection

Advanced Materials, EarlyView.
A charge‐coupled phototransistor is presented that uses dual photosensitive capacitors to provide gate voltage to a single transistor channel, enabling simultaneous capture of dynamic and static information, surpassing existing DAVIS technology. This charge‐coupled phototransistor paves the way for the development of high‐performance, low‐power, and ...
Shun Feng, Ruyue Han, Chi Liu, Dayu Jia, Guoteng Zhang, Xi Zhu, Bo Li, Yun Sun, Chuang Li, Yuping Gao, Tonglei Cheng, Zheng Han, Hui‐Ming Cheng, Dong‐Ming Sun   +13 more
wiley   +1 more source

Phosphorus diffusion with the help of the solid planar source in the manufacturing of the integrated circuits [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2008
The results of the development and realization of the basic process of the phosphorus diffusion for the formation of the active region of the power silicon transistor have been considered. It is shown that the obtained optimum technological conditions of
B. A. Shangereeva
doaj