Results 1 to 10 of about 19,112 (260)

Single-Electron Transistors [PDF]

Physics World, 2020
Abstract : A Single Electron Transistor (SET) turns on and off for an electron added to it. Our goal is to better control and understands the physics of SETs in order to make them technologically useful. Our work has shown that the SET behaves like an artificial atom, in that the number of electrons and the energy are both quantized.
Michel H Devoret, Christian Glattli
  +4 more sources

Superintegrated conformable organic transistors based on a universal microlithographic strategy [PDF]

Nature Communications
Conformable organic thin-film transistors (OTFTs) are identified as a core electronic component for next-generation wearable and implantable electronics.
Yanping Ni, Xiaoli Zhao, Chuang Xue, Jing Sun, Fanjunjie Han, Junru Zhang, Pengbo Xi, Yanhong Tong, Qingxin Tang, Yichun Liu   +9 more
doaj   +2 more sources

Complementary-Like Inverter Based on Organic-Inorganic Heterojunction Ambipolar Transistors on Flexible Substrate

IEEE Journal of the Electron Devices Society, 2021
Flexible electronic devices featured with miniaturization, light weight and integration, can meet the needs of new generation mobile electronics, and thus have received extensive attention.
Zhaohan Peng, Fengjing Liu, Huijuan Sun, Yanjie Wang, Jiawei Wang, Chao Jiang   +5 more
doaj   +1 more source

Characterization of Electronic Materials

Electronic Materials, 2022
Electronic materials are of great interest due to their potential to be applied in a broad range of important electronic devices including transistors, sensors, solar cells and others [...]
Wojciech Pisula
doaj   +1 more source

Inductive Single-Electron Transistor [PDF]

Physical Review Letters, 2004
We demonstrate a sensitive method of charge detection based on radio-frequency readout of the Josephson inductance of a superconducting single-electron transistor. Charge sensitivity 1.4 x 10(-4) e/square root Hz, limited by a preamplifier, is achieved in an operation mode which takes advantage of the nonlinearity of the Josephson potential.
Sillanpää, Mika A., Roschier, Leif, Hakonen, Pertti J.   +2 more
openaire   +3 more sources

Atomically Thin Amorphous Indium–Oxide Semiconductor Film Developed Using a Solution Process for High-Performance Oxide Transistors

Nanomaterials, 2023
High-performance oxide transistors have recently attracted significant attention for use in various electronic applications, such as displays, sensors, and back-end-of-line transistors.
Jun-Hyeong Park, Won Park, Jeong-Hyeon Na, Jinuk Lee, Jun-Su Eun, Junhao Feng, Do-Kyung Kim, Jin-Hyuk Bae   +7 more
doaj   +1 more source

High density integration of stretchable inorganic thin film transistors with excellent performance and reliability

Nature Communications, 2022
Transistors with inorganic semiconductors have superior performance than organics. However, they are brittle and thus unfavorable for building deformable electronics.
Himchan Oh, Ji-Young Oh, Chan Woo Park, Jae-Eun Pi, Jong-Heon Yang, Chi-Sun Hwang   +5 more
doaj   +1 more source

Integration of multiple electronic components on a microfibre towards an emerging electronic textile platform

Nature Communications, 2022
Towards further integration and miniaturization of e-textiles, in this work, authors demonstrate an integrated electronic fibre platform by fabricating multiple electronic components such as transistors, inverters, ring oscillators, and thermocouples ...
Sunbin Hwang, Minji Kang, Aram Lee, Sukang Bae, Seoung-Ki Lee, Sang Hyun Lee, Takhee Lee, Gunuk Wang, Tae-Wook Kim   +8 more
doaj   +1 more source

Reliability of Wide Band Gap Power Electronic Semiconductor and Packaging: A Review

Energies, 2022
Wide band gap (WBG) power electronic devices, such as silicon carbide metal–oxide–semiconductor field-effect transistors (SiC MOSFETs) and gallium–nitride high-electron-mobility transistors (GaN HEMTs) have been widely used in various fields and occupied
Yalin Wang, Yi Ding, Yi Yin
doaj   +1 more source

Room-temperature valley transistors for low-power neuromorphic computing

Nature Communications, 2022
Valleytronic devices employ the electronic valley degree of freedom to realize potential low-power electronic applications. Here, the authors utilize a topological semiconductor to engineer valley polarization transistors with long lifetimes and ...
Jiewei Chen, Yue Zhou, Jianmin Yan, Jidong Liu, Lin Xu, Jingli Wang, Tianqing Wan, Yuhui He, Wenjing Zhang, Yang Chai   +9 more
doaj   +1 more source