Results 151 to 160 of about 19,112 (260)

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

Advanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid, Haiyue Dong, Gillian M. Nolan, SungWoo Nam, Nadya Mason, Pinshane Y. Huang, Arend M. van der Zande   +6 more
wiley   +1 more source

Intrinsically stretchable 2D MoS₂ transistors. [PDF]

Nat Commun
Kim K, Kuzumoto Y, Jung C, Heo S, Zou T, Byeon G, Kang H, Kim H, Lim Y, Shin J, Lim SJ, Kim JY, Jung JY, Kang SG, Lee BL, Noh YY, Lee GH, Kim TG.   +17 more
europepmc   +1 more source

Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS2 Field Effect Transistors

Advanced Materials, EarlyView.
Enhancement‐mode monolayer MoS2 FETs with low threshold voltage are essential for low‐power electronics. The threshold voltage can be tuned by the gate metal work function when the semiconductor/dielectric interface is clean. Interfaces between monolayer MoS2 and ZrO2 or hBN allow effective work‐function modulation of the threshold voltage, in contrast
Lixin Liu, Han Yan, Leyi Loh, Kamal Kumar Paul, Soumya Sarkar, Deepnarayan Biswas, Tien‐Lin Lee, Takashi Taniguchi, Kenji Watanabe, Manish Chhowalla, Yan Wang   +10 more
wiley   +1 more source

Highly Efficient Conductivity Modulation via Stacked Multi-Gate Graphene Ambipolar Transistors. [PDF]

Nanomaterials (Basel)
Nie C, Zhang H, Zhang X, Sun F, Liu J, Wei X.   +5 more
europepmc   +1 more source

Electronics: Golden Transistors [PDF]

NPG Asia Materials, 2008
openaire   +1 more source

Charge Transfer States in Donor–Acceptor Bulk‐Heterojunctions as Triplet–Triplet Annihilation Sensitizer for Solid‐State Photon Upconversion

Advanced Materials Interfaces, EarlyView.
A near‐infrared photosensitizer that facilitates efficient solid‐state photon upconversion by recycling triplets formed within a fullerene‐based donor–acceptor bulk‐heterojunction system is demonstrated. Spectroscopic investigations reveal that the energy of photogenerated charge transfer states of triplet character (3CT) is subsequently transferred to
Maciej Klein, Alexander R. Ireland, Evan G. Moore, Dennis Delic, Ajay K. Pandey   +4 more
wiley   +1 more source

Suppressing Metal–Molecule Charge Transfer With a Phosphorus Interlayer

Advanced Materials Interfaces, EarlyView.
Phosphorus forms stable reconstructions with remarkable properties on various metal substrates. Here, using a spectroscopic approach, its role as an effective buffer layer on Cu(110) is demonstrated, preventing charge transfer to adsorbed Zn‐tetraphenylporphyrins (ZnTPP).
Mattia Bassotti, Luca Floreano, Luca Schio, Sergio Salaverria, Dimas G. de Oteyza, Giacomo Giorgi, Frederik Schiller, Alberto Verdini   +7 more
wiley   +1 more source

Junctionless Silicon Nanowire Transistors without the Use of Impurity Doping. [PDF]

ACS Nano
Nagarajan S, König D, Ratschinski I, Galderisi G, Shams S, Mikolajick T, Hiller D, Trommer J.   +7 more
europepmc   +1 more source

High‐Mobility and Low‐Voltage Top‐Gate Transistors Comprising an InSnO–InSnWO Channel Layer and a Polymethyl Methacrylate Dielectric Layer

Advanced Materials Interfaces, EarlyView.
The top‐gate thin film transistors (TFTs) combining the advantages of both the inorganic InSnWO channel layer and the organic polymethyl methacrylate dielectric layer were prepared. The optimized TFTs exhibit excellent performance, including a high mobility (> 60 cm2 V−1 s−1), a low threshold voltage (< 0.50 V; positive value), and robust stabilities ...
Lan Yue, Tao Sun, Min Su, Fanxin Meng
wiley   +1 more source

Wafer-scale high-κ HfO₂ dielectric films with sub-5-Å equivalent oxide thickness for 2D MoS₂ transistors. [PDF]

Nat Commun
Zhang S, Zhang T, Yu H, Li T, Li X, Cui C, Zhou Y, Guo H, Wang S, Zheng D, Huang L, Bai L, Liu S, Shen C, Yang W, Du L, Shi D, Xian L, Tao X, Chai Y, Li N, Zhang G.   +21 more
europepmc   +1 more source