Results 161 to 170 of about 19,829 (262)

Unveiling the Hidden Geometry of OECTs: Contact‐Semiconductor Overlap Driven Errors in Volumetric Capacitance

open access: yesAdvanced Materials Technologies, EarlyView.
This work examines how contact–semiconductor overlap influences volumetric capacitance extraction in organic electrochemical transistors as device dimensions shrink. It shows that neglecting overlap leads to systematic, geometry‐driven errors in capacitance values.
Renan Colucci   +7 more
wiley   +1 more source

A high-frequency silicon-graphene-germanium barristor. [PDF]

open access: yesNat Commun
Wang X   +20 more
europepmc   +1 more source

Ultrathin and Flexible Organic Light‐Addressable Potentiometric Sensors

open access: yesAdvanced Materials Technologies, EarlyView.
The first ultrathin, fully organic, and flexible light‐addressable potentiometric sensor (LAPS) is demonstrated. With a thickness of only 2.3–2.9 µm, this standalone film offers sensitivity to electrolyte potential and stable performance for over 170 days.
Ami Ichikawa   +6 more
wiley   +1 more source

Reconfigurable skin electronics enabled by intrinsically stretchable photoelectric memory transistors. [PDF]

open access: yesNat Commun
Park SH   +8 more
europepmc   +1 more source

Printed SWCNT‐Based p–n Junction Thin‐Film Near‐Infrared Photoresistors Enabled by a Sustainable Furan‐Derived π‐Conjugated Polymer

open access: yesAdvanced Materials Technologies, EarlyView.
A sustainable polymer–carbon nanotube bilayer enables efficient near‐infrared photodetection in a simple lateral planar p–n junction thin‐film architecture. Thermal side‐chain cleavage enhances interfacial coupling, shifts the dominant photoresponse from 800 to 1000 nm, and substantially improves device performance.
Jenner H. L. Ngai   +3 more
wiley   +1 more source

Medium-scale integrated circuits based on p-type 2D semiconducting MoTe<sub>2</sub>. [PDF]

open access: yesNat Commun
Wang H   +13 more
europepmc   +1 more source

Disturb‐Resilient and Wake‐up‐Free 2T‐MFMFET Array for Storage and Computing Applications

open access: yesAdvanced Materials Technologies, EarlyView.
A disturb‐resilient and wake‐up‐free 2T‐MFMFET array fabricated using a FeRAM‐compatible process demonstrates excellent uniformity, a large memory window, and 3‐bit multi‐level‐cell storage capability. A newly proposed hybrid in‐memory computing scheme further enables accurate multiply–accumulate operations with minimal refresh overhead, highlighting ...
Chen‐Yi Cho   +6 more
wiley   +1 more source

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