Results 151 to 160 of about 19,767 (262)

Author Correction: Wafer-scale high-κ HfO₂ dielectric films with sub-5-Å equivalent oxide thickness for 2D MoS₂ transistors. [PDF]

Nat Commun
Zhang S, Zhang T, Yu H, Li T, Li X, Cui C, Zhou Y, Guo H, Wang S, Zheng D, Huang L, Bai L, Liu S, Shen C, Yang W, Du L, Shi D, Xian L, Tao X, Chai Y, Li N, Zhang G.   +21 more
europepmc   +1 more source

Polarization‐Enabled Piezoelectric Tellurium–Selenium (TexSe1–x) Thin Films for Memory Switching and Artificial Synaptic Functions

Advanced Science, EarlyView.
Here, we demonstrate and investigate polarization‐enabled electromechanical responses in cryogenic physical vapor deposition (cryogenic PVD)‐deposited TexSe1‐x thin films, a tellurium‐based compound with a tunable bandgap and enhanced non‐centrosymmetry.
Chia‐Chen Chung, Mayur Chaudhary, Chia‐Hung Lo, Po‐Chien Lai, You‐Jie Lin, Ruei‐Hong Cyu, Yu‐Ren Peng, Bing‐Ni Gu, Zhao‐Feng Lou, Quynh Thi Le, Yi‐Jen Yu, Yen‐Fu Lin, Min‐Hung Lee, Ying‐Hao Chu, Chang‐Hong Shen, Der‐Hsien Lien, Yu‐Lun Chueh   +16 more
wiley   +1 more source

Nano-Power OTA-Based Low-Pass Filter for Ultra-Low-Energy Biomedical Signal Processing. [PDF]

Sensors (Basel)
Kulej T, Kumngern M, Khateb F.
europepmc   +1 more source

Two‐Dimensional Triferroics: From Fundamental Couplings to Multifunctional Applications

Advanced Science, EarlyView.
This graphic summarizes the three main types of currently reported 2D triferroic couplings. From the structural perspective, existing systems can be broadly classified into two categories, which exhibit distinct symmetry features and coupling behaviors. Beyond the lattice difference, a third type involves the interplay among ferroelectricity, magnetism,
Yang Li, Jialin Gong, Zhiqing Li
wiley   +1 more source

Hierarchical hydrogen bonds enable stretchable, self-healing, and high-mobility polymer semiconductors. [PDF]

Natl Sci Rev
Facchetti A.
europepmc   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source

A high-frequency silicon-graphene-germanium barristor. [PDF]

Nat Commun
Wang X, Sun S, Qiao Z, Jiang H, Li C, Jiang H, Bai J, Song X, Li X, Wang X, Zhu X, Feng S, Li B, Liang J, Wang L, Xue Z, Ohno Y, Gao J, Di Z, Sun D, Liu C.   +20 more
europepmc   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Sustainable Synaptic Device with Two‐Dimensional Ferroelectric Materials for Neuromorphic Computing

Advanced Science, EarlyView.
α‐In2Se3 based FeSFETs can be utilized as sustainable devices through polarization switching governed by both out‐of‐plane and in‐plane polarizations. Upon reaching a fatigued state, current annealing enabled by conductance modulation can significantly enhance the endurance of FeSFETs.
Jaewook Yoo, Seokjin Oh, Minah Park, Jong Min Song, Hongseung Lee, Seohyeon Park, Sojin Jung, Seongbin Lim, Soohyun Lim, Dongsun Shin, Ji Won Heo, TaeWan Kim, Hagyoul Bae   +12 more
wiley   +1 more source

Reconfigurable skin electronics enabled by intrinsically stretchable photoelectric memory transistors. [PDF]

Nat Commun
Park SH, Jeong MW, Vo NTP, Chang HR, Nguyen TA, Hwang SY, Lee SH, Lee TI, Oh JY.   +8 more
europepmc   +1 more source