Results 171 to 180 of about 19,767 (262)

Optimization of SWCNT‐FET Biosensors by Aptamer Engineering and Toehold‐Mediated Strand Displacement

open access: yesAdvanced Science, EarlyView.
Aptamer‐based single‐walled carbon nanotube (SWCNT) field‐effect transistor (FET) biosensors are developed for label‐free, real‐time biomarker detection. Truncated DNA aptamers enhance sensitivity through improved conformational switching. A toehold‐mediated strand displacement (TMSD) strategy optimizes functionalization and simplifies fabrication. The
Haosen Miao   +8 more
wiley   +1 more source

Origin of Threshold Voltage Instabilities in Indium Oxide Transistors. [PDF]

open access: yesACS Appl Mater Interfaces
Lin TJ   +15 more
europepmc   +1 more source

CMOS‐Integrated Synaptic Photoreceptor Chip Inspired by Insect Visual Processing

open access: yesAdvanced Science, EarlyView.
CMOS‐integrated Si QDs/ReS2 synaptic photoreceptor array mimics the parallel processing and wavelength‐selective strategy of insect vision. By combining intrinsic ultraviolet‐violet sensitivity with synaptic plasticity, the chip enables frontend sensory redundancy reduction without external filters, offering a scalable pathway toward lowpower ...
Jian Chai   +25 more
wiley   +1 more source

Thermoelectric Gating Organic Electrochemical Transistors Enabled by Printable Ionogels With n‐p Convertible Thermopower

open access: yesAdvanced Science, EarlyView.
A type of thermoelectric ionogels with convertible n‐p thermopowers are demonstrated with Seebeck coefficients ranging from ‐3.61 to +9.74 mV K−1. Thus, thermoelectric gating organic electrochemical transistor is achieved by employing ionogel as thermoelectric modules and ionic dielectrics simultaneously, paving the road to self‐powered, highly ...
Xingyu Hu   +8 more
wiley   +1 more source

Triple‐Mode Ferroelectric Thin‐Film Transistor for Hybrid Electrical–Optical Reservoir Computing

open access: yesAdvanced Science, EarlyView.
A triple‐mode ferroelectric thin‐film transistor is developed by integrating Si3N4/HZO/IGZO layers to realize three independent memory modes: electric long‐term, electric short‐term, and optical short‐term. This single‐device architecture functions as both a reservoir and readout layer, achieving 92.43% MNIST accuracy. It offers a fully hardware‐based,
Hyeonho Lee   +9 more
wiley   +1 more source

Epitaxial Bi2O2Se/Bi2O5Se Thin Films: Revealing Electric‐Field‐Driven Oxidation and Resistive Switching Dynamics for Advanced Memory Devices

open access: yesAdvanced Science, EarlyView.
Bi2O2Se/Bi2O5Se bilayer heterostructure exhibits reversible structural evolution during device operation, directly revealed by atomic‐scale investigation. Oxygen vacancy redistribution governs filament formation and rupture, enabling stable multilevel resistive switching and synaptic‐like behaviors.
Yen‐Jung Chen   +8 more
wiley   +1 more source

Observation of Excitonic Instability in a Monolayer Ta2NiSe5 With Strain Disorder

open access: yesAdvanced Science, EarlyView.
Monolayer Ta2${\rm Ta}_2$NiSe5${\rm NiSe}_5$ sustains an excitonic insulating phase up to 190 K, with Raman signatures of gap opening and critical excitonic fluctuations. Thickness‐independent large gap ratios highlight strong exciton‐phonon coupling, while substrate‐induced strain disorder depresses Tc, establishing monolayer Ta2${\rm Ta}_2$NiSe5${\rm
So Young Kim   +13 more
wiley   +1 more source

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