Results 81 to 90 of about 19,112 (260)

Trap‐Assisted Transport and Neuromorphic Plasticity in Lead‐Free 2D Perovskites PEA2SnI4

open access: yesAdvanced Functional Materials, EarlyView.
An artificial retina built from lead‐free layered perovskite (PEA)2SnI4 converts light input into a persistent photocurrent and sums successive flashes over time. Micro/nanocrystals integrated on electrodes act as synapse‐like pixels that perform temporal integration directly in hardware. This in‐sensor preprocessing merges detection and computation on
Ofelia Durante   +17 more
wiley   +1 more source

Damage Effect of Single and Sequential Neutron/γ Irradiation on Bipolar Device

open access: yesYuanzineng kexue jishu
Bipolar transistors are widely used in electronic circuits and serve as core components in various devices. In the complex radiation environments, electronic circuits are exposed to more than one type of radiation particle.
XING Jiabin1, WANG Kai2, CAO Fei1, YANG Jianqun2, QIN Jianqiang1
doaj   +1 more source

From Mechanics to Electronics: Influence of ALD Interlayers on the Multiaxial Electro‐Mechanical Behavior of Metal–Oxide Bilayers

open access: yesAdvanced Functional Materials, EarlyView.
Ultrathin AlOxHy interlayers between aluminum films and polymer substrates significantly improve electro‐mechanical properties of flexible thin film systems. By precisely controlling interlayer thickness using atomic layer deposition, this study identifies an optimal interlayer thickness of 5–10 nm that enhances ductility and delays cracking.
Johanna Byloff   +9 more
wiley   +1 more source

Enhancing device characteristics of pentacene-based organic transistors through graphene integration: A simulation study and performance analysis

open access: yesAIP Advances
Transistors find application within various integrated circuits (ICs) alongside a multitude of electronic devices. These ICs have become integral components in contemporary systems.
Manish Kumar Singh   +2 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Bio‐Inspired Molecular Events in Poly(Ionic Liquids)

open access: yesAdvanced Functional Materials, EarlyView.
Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley   +1 more source

Unraveling Quantitative Sensing Mechanism and Predictive Molecular Metrics for High‐Performance OFET Amine Sensors

open access: yesAdvanced Functional Materials, EarlyView.
This study introduces a novel chloro boron subphthalocyanine/polymer blend OFET sensor achieving 0.005 ppb limit of detection for ammonia at room temperature and high selectivity against similar amines. An original theoretical framework is proposed to describe the sensing mechanism, relating analyte molecular volume and Lewis basicity to sensor ...
Kavinraaj Ella Elangovan   +6 more
wiley   +1 more source

Ion buffering and interface charge enable high performance electronics with organic electrochemical transistors

open access: yesNature Communications, 2019
The rationale design of optimized organic electrochemical transistors (OECTs) for next-generation bioelectronics requires further exploration of the underlying device physics.
Paolo Romele   +3 more
doaj   +1 more source

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