Results 191 to 200 of about 181,341 (246)
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Trapping center parameters in In6S7 crystals
Physica B: Condensed Matter, 2011Abstract Thermally stimulated current measurements were carried out on In 6 S 7 single crystals in the temperature range of 10–225 K with a constant heating rate of 0.8 K/s. The study of trapping centers was accomplished by the measurements of current flowing along the c -axis of crystals. The analysis of the glow curve according to various methods,
M. Isik, N.M. Gasanly
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Charge Trapping Centers in Ferroelectric Ceramics
MRS Proceedings, 1992ABSTRACTElectron paramagnetic resonance (EPR), photo-thermal deflection spectroscopy (PDS), and electrical measurements have been used to characterize as-received and UV-lluminated lead lanthanum zirconate titanate (PLZT) and PZT ceramics. Following optical illumination we observe the activation of positively charged Pb+3 and negatively charged Ti+3 ...
C. H. Seager +4 more
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Trapped-hole centers in irradiated Li3VO4
Journal of Applied Physics, 1993Defects in lithium vanadate (Li3VO4) exposed to x rays were studied by electron spin resonance (ESR). 77 K irradiation produces two types of trapped-hole centers. One is supposed to be carbonate radical CO3−, which is thermally stable even at room temperature.
Takuya Murata, Toshikatsu Miki
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Trapping centers in inse single crystals
Materials Chemistry and Physics, 1983Abstract A systematic investigation of centers acting in InSe single crystals has been carried out by means of the following electric and photoelectronic techniques: 1. a) Resistivity behaviour as a function of temperature, analyzed by the single donor-single acceptor model 2.
DI GIULIO, Massimo +4 more
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Trapped-hole centers in neutron-irradiated synthetic quartz
Physical Review B, 1994EPR signals of two defect centers in neutron-irradiated high-purity quartz have been analyzed. The principal values and the anisotropy of the g tensors suggest an attribution to peroxy radicals and nonbridging oxygen hole centers.
Azzoni, C +2 more
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Trapping centers in x-irradiated quartz
Soviet Physics Journal, 19691. These studies of the effect of annealing on the luminescent and dielectric properties of synthetic quartz confirm the suggestion that electrons localized at traps are responsible for the additional polarization which occurs during irradiation of crystalline quartz; these results also show that the traps are nonimpurity defects which form during ...
V. G. Voevodin, G. I. Potakhova
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Trapped Electron Centers and Trapped Hole Centers in Heavily Doped KCl: Tl. I. Thermal Glow Study
Journal of the Physical Society of Japan, 1979Thermal glow curves of KCl crystals containing 0.2∼4.2 mole% of TlCl are measured after X-ray irradiation at 77 K. Trapped electron and trapped hole centers such as Tl 0 , Tl 2+ , Tl 2 + , (Tl 2 + )' and Tl 2 3+ centers are found to be concerned in the thermal glow phenomena.
Yasuko Toyotomi, Ryumyo Onaka
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Immuno‐Spin Trapping: Detection of Protein‐Centered Radicals
Current Protocols in Toxicology, 2005AbstractProtein‐centered radicals are involved in biological oxidative damage induced by drugs, environmental hazards, and cellular reactive oxygen species. Presently, the technique most widely used to study protein‐centered radicals is electron spin resonance (ESR; also known as electron paramagnetic resonance, EPR); used either directly or in ...
Dario C, Ramirez, Ronald P, Mason
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Trapping Centers in Thermoluminescent Calcite
Physical Review, 1964Trapping levels which account for most of the thermoluminescence in natural calcite have been investigated. Results are based on a study of color centers which are shown to be closely associated with the traps involved in thermoluminescence. Optical absorption measurements in a variety of Iceland-spar crystals show that the prominent calcite glow peaks
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Coulombic and neutral trapping centers in silicon dioxide
Physical Review B, 1991Ces pieges d'attraction coulombienne sont produits avec l'injection d'avalanche des trous a partir du substrat de silicium et de la capture ulterieure de certains de ces trous sur des sites lies a l'arsenic. Durant la photoemission interne des electrons a partir d'une porte fine d'Al, on determine les deplacements de tension dus a l'annihilation des ...
, Buchanan, , Fischetti, , DiMaria
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