Results 211 to 220 of about 28,458 (262)

Traps and recombination centers in YALO3:Ce,Co

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2002
Abstract It has recently been noted that notorious underperfomance of YAlO 3 :Ce scintillator (25–30 ns scintillation decay time at room temperature instead of 17 ns) is caused by uncontrolled traps that accompany Ce radiative recombination centers. A possible way to improve the material is to introduce a second intentional dopant that would assume a
Wojtowicz, Andrzej J., Bruyndonckx, Peter, Tavernier, Stefaan, Wisniewska, Monika, Drozdowski, W., Galazka, Z., Glodo, J., Lukasiewicz, T., Szupryczynski, P., Wisniewski, D.   +9 more
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Coulombic and neutral trapping centers in silicon dioxide

Physical Review B, 1991
Ces pieges d'attraction coulombienne sont produits avec l'injection d'avalanche des trous a partir du substrat de silicium et de la capture ulterieure de certains de ces trous sur des sites lies a l'arsenic. Durant la photoemission interne des electrons a partir d'une porte fine d'Al, on determine les deplacements de tension dus a l'annihilation des ...
, Buchanan, , Fischetti, , DiMaria
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Trapped Electron Centers and Trapped Hole Centers in Heavily Doped KCl: Tl. II. ESR Study

Journal of the Physical Society of Japan, 1979
In X-ray irradiated KCl crystals containing more than 1 mole% of TlCl, ESR signals of Tl 2 3+ centers which are characterized by g =2.04 have been newly observed. This pair center has a 6 s hole whose wavefunction is almost localized on one of the thallium ions (hyperfine constant A =105 GHz), and only a little fraction (about 1%) of the wavefunction ...
Yasuko Toyotomi, Ryumyo Onaka
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The Trapping Centers of Electrons in Glass

1958
In connection with his theory of the electric breakdown of amorphous substances, Frohlich suggested that in the glass state there should be various shallow electron traps below the conduction band, characteristic of the network structure of glass. On analizing our previous work on the electrical breakdown of glass, we arrived at the same inference ...
Hazimu Kawamura, Takeo Kikuchi
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Molecular Trapped Centers in Atomic Cryocrystals

Journal of Low Temperature Physics, 2001
Trapping of electronic excitations into molecular-like states in solid Xe, Kr, and Ar has been studied by cathodo- and photoluminescence spectroscopy. Radiative decay of these states exhibits features that may be related to the molecular trapped centers, which exist in the lattice of atomic cryocrystals prior to excitation of an electronic subsystem ...
Ogurtsov, A. N., Savchenko, E. V.
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Trapping of Hydrogen Molecules by M Centers

Journal of the Physical Society of Japan, 1973
Trapping of hydrogen molecules by M centers in KC1:U crystals has been investigated. The thermal bleaching of the M band converted optically from the F band was observed in the dark at 20, 30 and 40°C, and was explained by kinetic theory on diffusion of hydrogen molecules.
A. Díaz-Góngora, C. RUIZ Mejía
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Trapping centers in inse single crystals

Materials Chemistry and Physics, 1983
Abstract A systematic investigation of centers acting in InSe single crystals has been carried out by means of the following electric and photoelectronic techniques: 1. a) Resistivity behaviour as a function of temperature, analyzed by the single donor-single acceptor model 2.
DI GIULIO, Massimo, MICOCCI, Gioacchino, RUGGIERO, Livio, TEPORE, Antonio, ZUANNI, Ferruccio   +4 more
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Local trap centers in Bi4Ge3O12 crystals

Journal of Applied Spectroscopy, 1989
V. A. Gusev, S. A. Petrov
exaly   +2 more sources

Local Trapping Centers in the Ceramics of Eulytines

Journal of Applied Spectroscopy, 2003
Thermally stimulated luminescence (TSL) of ceramics having the structure of eulytine Bi4X3O12 (X = Si, Ge, Zr) on exposure to x-ray irradiation in the temperature region 80–400 K is studied. An analysis of the forms of the TSL curves implies that the recombination processes in the TSL peaks at 149 and 212 K in Bi4Si3O12 ceramics and at 143 and 230 K in
O. M. Bordun, I. I. Kukharskii
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The trapping centers of holes in a-As2Se3

Solid State Communications, 2004
Abstract The density of the trapping centers and their capture radius for holes in a-As2Se3 are determined by analyzing the imaginary term of the modulated photocurrent. The light-induced changes in the imaginary term are also examined to study the influences of the photo structural changes to the density of states and to detect possible hole ...
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