Results 201 to 210 of about 181,341 (246)

Deep muonium state in InSb: Recombination center vs. trapping center

Physica B: Condensed Matter, 2006
Abstract The bound state of an isotropic muonium atom has been detected in both n- and p-type InSb using a high-field μ SR technique. The hyperfine constant obtained for this center ( A = 2464 ± 1 MHz ) is characteristic of deep-level Mu 0 centers at tetrahedral interstitial sites in other cubic semiconductors, which ...
V.G. Storchak, D.G. Eshchenko, J.H. Brewer, B.A. Aronzon, S.P. Cottrell, R.L. Lichti, A.T. Savici, Y. J Uemura   +7 more
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Isoelectronic Trap Like Luminescence Centers Of Ingan

MRS Proceedings, 1997
AbstractThis paper describes the characteristics of the luminescence centers observed in the various photoluminescence (PL) and photoluminescence excitation (PLE) spectra of hexagonal InxGa1−xN microcrystals, synthesized by the nitridation of sulfide in the In concentration range of 2%<x<6%.
H. Kanie, H. Koami, T. Kawano, T. Totsuka   +3 more
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Trapping of Hydrogen Molecules by M Centers

Journal of the Physical Society of Japan, 1973
Trapping of hydrogen molecules by M centers in KC1:U crystals has been investigated. The thermal bleaching of the M band converted optically from the F band was observed in the dark at 20, 30 and 40°C, and was explained by kinetic theory on diffusion of hydrogen molecules.
A. Díaz-Góngora, C. RUIZ Mejía
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Trapping centers in heavy ion irradiated silicon

2014 International Semiconductor Conference (CAS), 2014
Low fluence heavy ions incident on high resistivity Si produce lattice defects which act as trapping centers, and produce also an important local field of strain. The strain field intensity increases with the increase of the difference in atomic size and mass between the ion and the Si atom host.
Catalin Palade, Sorina Lazanu, Magdalena Lidia Ciurea   +2 more
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Electron trap centers in Ag-borate glasses

Journal of Non-Crystalline Solids, 1977
Abstract The center created by silver trapping an electron in borate glasses are considered. It is shown by ESR techniques that on trapping an electron, silver ions may form four types of centers: the single Ag0 or (Ag+ + e) centers, and, at higher Ag contents, the Ag0(Ag+) or (Ag+ + e) (Ag+) centers in which a second silver is involved.
F. Assabghy, S. Arafa, E. Boulos, A. Bishay, N.J. Kreidl   +4 more
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Trapping center parameters of TlGaSe2 layered crystals

Physica B: Condensed Matter, 2004
Abstract Thermally stimulated current measurements are carried out on as-grown TlGaSe 2 layered single crystals in the temperature range of 90–220 K with various heating rates. Experimental evidence is found for the presence of two trapping centers with activation energy 98 and 130 meV.
N.S. Yuksek, H. Kavas, N.M. Gasanly, H. Ozkan   +3 more
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Trapped-hole centers in alkaline-earth oxides

Journal of Physics and Chemistry of Solids, 1990
Abstract Alkaline-earth oxides frequently exhibit a visible coloration when stimulated with photons or ionizing radiation. The defects responsible for this coloration are often due to paramagnetic hole centers, which absorb over a broad spectrum in the visible and near-visible region.
Y. Chen, M.M. Abraham
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Trap centers in Au-implanted MOS structures

Applied Physics A Solids and Surfaces, 1986
Trap centers in the Si-SiO2 interface region of MOS structures doped by ion implantation of gold have been investigated using constant capacitance deep level transient spectroscopy (CC-DLTS). Gold doses of 1012−3 × 1013 cm−2 were implanted into the back surface of the wafers and were then redistributed during a diffusion anneal for 30 min at 1100° or ...
N. F. Will, K. Hofmann, M. Schulz
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Charge carrier trapping centers in synthetic diamond

Diamond and Related Materials, 1997
Abstract Investigations of electrically active defects in synthetic diamond have been performed with the use of the method of currents of thermally stimulated depolarization (TSD). It has been shown that the trapping centers with the most probable activation energy of E = 1.7−2.0 eV (the trapping cross section being S=10−13−10−15 cm−2) are the ...
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Trapped hole centers in alkaline earth fluorides

Solid State Communications, 1968
Abstract We report effects of polarized bleaching light on the optical and e.p.r. spectra of VK centers in alkaline earth fluorides. The molecular axis of the VK center in these crystals is aligned along . We also report the presence of trapped hole centers in CaF2 with e.p.r. spectra similar to that of the VK center but with molecular axes close to
J.H. Beaumont, W. Hayes, G.P. Summers, J.W. Twidell   +3 more
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