Results 201 to 210 of about 28,458 (262)

Multiscale Modeling of the RESET Sweep in a Single-Layer MoS₂ Atomristor Using Density Functional Theory. [PDF]

ACS Omega
Turfanda A, Gagliardi A.
europepmc   +1 more source

Orthopoxvirus Antibodies in Feral Mammals in Mpox Outbreak Areas, Nigeria, 2021-2022. [PDF]

Emerg Infect Dis
Adedeji AJ, Meseko CA, Shittu IA, Maurice N, Ladan S, Obishakin E, Kabantiyok D, Gambo RA, Aliyu M, Ehiakhamen O, Abali I, Chagwa KA, Vandi B, Oyetunde S, Mkpuma N, Gado D, Ayuk BM, Adegboyega O, Akinsorotan A, Muhammad S, Matheny A, Morgan CN, Nakazawa Y, Doty JB.   +23 more
europepmc   +1 more source

Combining Time-Stamped Insect Sampling With eDNA-Metabarcoding of Guano to Reconstruct Community Interactions. [PDF]

Ecol Evol
Hartke TR, Wittenhorst M, Koch M, Scherber C, Twietmeyer S, Bourlat SJ, Böhme M, Kirse A.   +7 more
europepmc   +1 more source

Targeted Regulation of Abortion Providers Laws and Pregnancies Conceived Through Fertility Treatment.

JAMA Health Forum
Melville SJF, Shi J, Garg B, Caughey AB, Kornfield M.   +4 more
europepmc   +1 more source

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Trap centers in molybdates

Optical Materials, 2013
Charge carrier trapping centers have been studied in molybdates CaMoO4, SrMoO4 and PbMoO4 with the scheelite crystal structure as well as in ZnMoO4, which crystallize in a-ZnMoO4 structural type. The trap parameters such as activation energies and frequency factors have been determined.
Vitali Nagirnyi, Maksym Buryi, D A Spassky   +2 more
exaly   +3 more sources

Trap centers in cuprous oxide

Solid-State Electronics, 1988
Abstract The effect of annealing temperature on the trap density in Cu 2 O is investigated. From space charge limited current (SCLC), Hall effect and DLTS measurements it is demonstrated that there is a trap-band distribution with the Fermi level lying within the trap-band. The maximum of this trap-band distribution is just above the Fermi level.
L Papadimitriou
exaly   +2 more sources

Copper in Germanium: Recombination Center and Trapping Center

Physical Review, 1956
The time-dependent photoconductivity of copper-doped $n$-type and $p$-type germanium bridges has been measured between 130\ifmmode^\circ\else\textdegree\fi{}K and 293\ifmmode^\circ\else\textdegree\fi{}K. Temporary hole traps were found in the $n$-type samples at the lower temperatures but no traps were observed in the $p$ type.
R. G. Shulman, B. J. Wyluda
openaire   +1 more source