Results 151 to 160 of about 125,060 (320)

High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers

Advanced Electronic Materials, EarlyView.
Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley   +1 more source

Materials Design Principles for Large Memory Windows: Coercive Voltage Engineering in Ferroelectric– Dielectric Heterostructures

Advanced Electronic Materials, EarlyView.
Coercive voltage enhancement in hafnia‐based ferroelectric–dielectric heterostructures is shown to originate from leakage‐governed voltage division between the ferroelectric and dielectric layers. Through experiments, circuit modeling, and defect‐based simulations, a universal framework is established to engineer large memory windows without altering ...
Prasanna Venkatesan, Hari Jayasankar, Salma Soliman, Priyankka Ravikumar, Lance Fernandes, Chinsung Park, Amrit Garlapati, Chengyang Zhang, Sanghyun Kang, Shimeng Yu, Suman Datta, Asif Khan, Mengkun Tian, Zheng Wang, Kijoon Kim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Luca Larcher, Gaurav Thareja, Andrea Padovani   +21 more
wiley   +1 more source

Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM. [PDF]

Discov Nano
Bae SJ, Lee SH, Park J, Kim MS, Hong JW, Koh WS, Yun GS, Jang J, Bae JH, Kang IM.   +9 more
europepmc   +1 more source

Interface‐Engineered TiO2 Interlayer for Reliable Hafnia‐Based MFMIS FeFETs

Advanced Electronic Materials, EarlyView.
An ultrathin TiO2 interlayer suppresses oxygen‐vacancy formation in HZO‐based MFMIS FeFETs, enabling enlarged memory windows and reduced leakage current with improved switching characteristics. ABSTRACT We investigated a TiO2‐engineered interfacial strategy to enhance the stability and reliability of hafnia‐based ferroelectric field‐effect transistors (
Changhyeon Han, Been Kwak, Hyun‐Min Kim, Dahye Yu, Daewoong Kwon   +4 more
wiley   +1 more source

Enhancement of the Photoelectric Performance of (6,5) Carbon Nanotubes via Construction of Type‐I Heterojunctions with Rhodamine B

Advanced Electronic Materials, EarlyView.
Single‐chirality (6,5) carbon nanotube (CNT) films, when integrated with RhB molecules to form Type I heterogeneous films, exhibit a more than twofold increase in photoluminescence efficiency and approximately one‐order‐of‐magnitude enhancement in photoelectric conversion efficiency compared to pristine (6,5) CNT films.
Shilong Li, Linhai Li, Dehua Yang, Xiaojun Wei, Weiya Zhou, Huaping Liu   +5 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Quantum Sensitive, Record Dynamic Range Terahertz Tunnel Field-Effect Transistor Detectors Exploiting Multilayer Graphene/hBN/Bilayer Graphene/hBN Heterostructures. [PDF]

Nano Lett
Viti L, Shi L, Watanabe K, Taniguchi T, Vitiello MS.   +4 more
europepmc   +1 more source

Beyond Silicon: Toward Sustainable, NIR‐II, and Conformable Organic Photodiodes

Advanced Energy Materials, EarlyView.
In this perspective, a strategic shift in organic photodetector (OPD) research is proposed: instead of the incremental advances in silicon's stronghold arena, the most impactful future for OPDs lies in addressing silicon's intrinsic limitations, i.e., detection in the longer wavelength range above silicon's coverage (>1100 nm, termed as near infrared ...
Hrisheekesh Thachoth Chandran, Jiaming Huang, Hao Xia, Rakesh Rajendran Nair, Shen Xing, Gang Li, Karl Leo, Johannes Benduhn   +7 more
wiley   +1 more source