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ACS Applied Nano Materials, 2019
The fast-developing information technology has imposed urgent need for effective solutions to overcome the increasing power density in further scaled electronic devices and systems.
Xixi Jiang +9 more
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The fast-developing information technology has imposed urgent need for effective solutions to overcome the increasing power density in further scaled electronic devices and systems.
Xixi Jiang +9 more
semanticscholar +1 more source
Tunnel Field Effect Transistor with Ferroelectric Gate Insulator
Journal of Nanoscience and Nanotechnology, 2019Ferroelectric tunnel field effect transistor (Fe-TFET) having improved DC performance in comparison to the conventional TFET (c-TFET) is proposed and investigated through the technology computer-aided design (TCAD) simulation. By inserting ferroelectric material into the gate insulator of TFET, enhanced on-current (Ion) is obtained. It is attributed to
Kitae, Lee +7 more
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Dopingless Tunnel Field-Effect Transistor With Oversized Back Gate: Proposal and Investigation
IEEE Transactions on Electron Devices, 2018Tunnel field-effect transistors (TFETs) have shown attractive device performance making them a potential candidate to replace MOSFETs in future technologies. However, the inherent ambipolar characteristic of TFETs poses challenge in digital applications.
M. A. Raushan, N. Alam, M. J. Siddiqui
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Vertical Tunnel Field-Effect Transistor with Polysilicon Layer
Journal of Nanoscience and Nanotechnology, 2019In this paper, a novel structure of tunnel field-effect transistors (TFETs) is proposed. The proposed device has an intrinsic polysilicon layer located in the overlap region between the source and the gate, which can increase the tunneling area and overcome the low ON-current drawback of the conventional TFET.
Won Joo, Lee +6 more
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Modeling the Tunnel Field-Effect Transistor Based on Different Tunneling Path Approaches
IEEE Transactions on Electron Devices, 2018In this paper, the effect of a choice of the tunneling path approach on electrical characteristics of the silicon tunnel field-effect transistor (TFET) is theoretically investigated with the use of a developed 2-D semiclassical numerical simulator and a ...
P. Wiśniewski, B. Majkusiak
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Innovative Tunnel Field-Effect Transistor Architectures
2013Keywords: TFET ; Tunnel FET ; band-to-band tunneling ; steep slope switches ; subthreshold slope ; electron-hole bilayer TFET ; EHBTFET ; density of states ; ferroelectricity ; Fe-TFET ; Landau’s theory ; P(VDF-TrFE) ; barrier tunneling ; vertical TFET ; tunneling path These Ecole polytechnique federale de Lausanne EPFL, n° 5691 (2013)Programme ...
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Tunnel Diodes and Field-Effect Transistors
2016The concept of quantum mechanical tunneling is introduced. Degenerate and nondegenerate semiconductors are defined and distinguished. Possibility of carrier tunneling across extremely thin depletion regions is explained. Operation of a tunnel diode is described in terms of its energy band diagram.
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