Results 101 to 110 of about 12,308 (221)

Toward Capacitive In‐Memory‐Computing: A Device to Systems Level Perspective on the Future of Artificial Intelligence Hardware

Advanced Intelligent Discovery, EarlyView.
Capacitive, charge‐domain compute‐in‐memory (CIM) stores weights as capacitance,eliminating DC sneak paths and IR‐drop, yielding near‐zero standbypower. In this perspective, we present a device to systems level performance analysis of most promising architectures and predict apathway for upscaling capacitive CIM for sustainable edge computing ...
Kapil Bhardwaj, Ella Paasio, Sayani Majumdar   +2 more
wiley   +1 more source

Magnetic Micro and Nano Sensors for Continuous Health Monitoring

Micro
Magnetic micro and nano sensors can be used in a broad variety of applications, e.g., for navigation, automotives, smartphones and also for health monitoring.
Tomasz Blachowicz, Ilda Kola, Andrea Ehrmann, Karoline Guenther, Guido Ehrmann   +4 more
doaj   +1 more source

Tunnel magnetoresistance of magnetic molecules with spin-vibron coupling

AIP Advances, 2017
The effect of molecular vibrations on the tunnel magnetoresistance (TMR) of a magnetic tunnel junction with a single spin-anisotropic molecule interconnecting its electrodes is investigated theoretically. We demonstrate that if these vibrations couple at
Ahmed Kenawy, Janine Splettstoesser, Maciej Misiorny   +2 more
doaj   +1 more source

A Piezoelectric, Strain-Controlled Antiferromagnetic Memory Insensitive to Magnetic Fields

, 2019
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as low-temperature AFM ...
Chen, Zuhuang, Coey, Michael, Feng, Zexin, Guo, Huixin, Hu, Zexiang, Hua, Hui, Jiang, Chengbao, Leng, Zhaoguogang, Liu, Zhiqi, Liu, Zikui, Lu, Wenkuo, Qin, Peixin, Shang, Shunli, Wang, Hui, Wang, Jingmin, Wang, Jinhua, Wang, Xiaoning, Yan, Han, Zhou, Xiaorong, Zhu, Zengwei   +19 more
core   +1 more source

Device‐Level Implementation of Reservoir Computing With Memristors

Advanced Intelligent Systems, EarlyView.
Reservoir computing (RC) is an emerging computing scheme that employs a reservoir and a single readout layer, which can be actualized in the nanoscale with memristors. As a comprehensive overview, the principles of RC and the switching mechanisms of memristors are discussed, followed by actual demonstrations of memristor‐based RC and the remaining ...
Sunbeom Park, Hyojung Kim, Ho Won Jang
wiley   +1 more source

The zero-moment half metal: How could it change spin electronics?

AIP Advances, 2016
The Heusler compound Mn2RuxGa (MRG) may well be the first compensated half metal. Here, the structural, magnetic and transport properties of thin films of MRG are discussed. There is evidence of half-metallicity up to x = 0.7, and compensation of the two
Davide Betto, Karsten Rode, Naganivetha Thiyagarajah, Yong-Chang Lau, Kiril Borisov, Gwenael Atcheson, Mario Žic, Thomas Archer, Plamen Stamenov, J. M. D. Coey   +9 more
doaj   +1 more source

Feature Disentangling and Combination Implemented by Spin–Orbit Torque Magnetic Tunnel Junctions

Advanced Intelligent Systems, EarlyView.
Spin–orbit torque magnetic tunnel junctions (SOT‐MTJs) enable efficient feature disentangling and integration in image data. A proposed algorithm leverages SOT‐MTJs as true random number generators to disentangle and recombine features in real time, with experimental validation on emoji and facial datasets.
Xiaohan Li, Yingqian Xu, Caihua Wan, Ran Zhang, Meike Hindenberg, Raik Hoffmann, Shiqiang Liu, Tianyi Zhang, Shilong Xiong, Dehao Kong, Jihao Xia, Fangshuo Gao, Zhuyang Nie, Thomas Kämpfe, Guoqiang Yu, Xiufeng Han   +15 more
wiley   +1 more source

Magnetron Sputtering Synthesis of La‐Doped BiFeO3 Thin Films and Enhanced Exchange Bias in CoFeB/Bi1‐xLaxFeO3 Heterostructures

Advanced Physics Research, EarlyView.
This study explores the epitaxial growth of high‐quality La‐doped BiFeO3 (BLFO) thin films at 550 °C using magnetron sputtering. The films exhibit good ferroelectric properties and low leakage current. A BLFO/CoFeB heterostructure is constructed, achieving an exchange bias field exceeding the coercive field at room temperature.
Zhiqin Zhou, Ligang Bai, Chen Qi, Xiaoyang Lin, Ivair Aparecido dos Santos, Gustavo Sanguino Dias, Luiz Fernanado Cótica, Weisheng Zhao, Yanxue Chen, Tianxiao Nie, Guodong Wei   +10 more
wiley   +1 more source

Surface Properties of CeB6 and Challenges in Surface Preparation Revealed by Scanning Tunneling Microscopy

Advanced Physics Research, EarlyView.
The investigation of the Kondo lattice system CeB6${\rm CeB}_6$ by highly surface sensitive techniques is hampered by difficulties in preparing well‐ordered, atomically flat surfaces. The richness of possible surface terminations and their impact on spectroscopic STM results are discussed.
M. Victoria Ale Crivillero, Priscila F. S. Rosa, Zachary Fisk, Ulrich K. Rößler, Steffen Wirth   +4 more
wiley   +1 more source

Tunneling anisotropic magnetoresistance in La2/3Sr1/3MnO3/LaAlO3/Pt tunnel junctions

AIP Advances, 2016
The magnetotransport properties of La2/3Sr1/3MnO3(LSMO)/ LaAlO3(LAO)/Pt tunneling junctions have been analyzed as a function of temperature and magnetic field.
R. Galceran, Ll. Balcells, A. Pomar, Z. Konstantinović, N. Bagués, F. Sandiumenge, B. Martínez   +6 more
doaj   +1 more source