Results 51 to 60 of about 12,308 (221)

Inverse tunneling magnetoresistance in nanoscale magnetic tunnel junctions [PDF]

Physical Review B, 2005
11 pages, 4 figures, To be published in Phys. Rev. B (in press)
openaire   +2 more sources

Tailoring tunnel magnetoresistance by ultrathin Cr and Co interlayers: A first-principles investigation of Fe/MgO/Fe junctions

, 2010
We report on systematic ab-initio investigations of Co and Cr interlayers embedded in Fe(001)/MgO/Fe(001) magnetic tunnel junctions, focusing on the changes of the electronic structure and the transport properties with interlayer thickness.
Ingrid Mertig, Jürgen Henk, P. Bose, Peter Bose, Peter Zahn   +4 more
core   +1 more source

Tunnel magnetoresistance exceeding 100% in magnetic tunnel junctions using Mn-based tetragonal alloy electrodes with perpendicular magnetic anisotropy

AIP Advances, 2023
We studied MgO barrier magnetic tunnel junctions (MTJs) comprising perpendicularly magnetized MnGa and FeCoB electrodes. In those perpendicular (p-) MTJs, we utilized thin metastable bcc CoMn alloys as an interlayer between MnGa and MgO to enhance the ...
Kazuya Z. Suzuki, Shigemi Mizukami
doaj   +1 more source

Tunnel magnetoresistance and interfacial electronic state

, 2002
We study the relation between tunnel magnetoresistance (TMR) and interfacial electronic states modified by magnetic impurities introduced at the interface of the ferromagnetic tunnel junctions, by making use of the periodic Anderson model and the linear ...
Campbell I A, Friedel J, Gijs M A M, H Itoh, Hasegawa H, Inoue J, Inoue J, Itoh H, J Inoue, Levy P M, Maekawa S, Tsymbal E Y, Tsymbal E Y   +12 more
core   +1 more source

Multistate spin-transfer-torque random access memory [PDF]

, 2016
Spin-transfer-torque random access memory (STT-RAM) is an emerging non-volatile memory technology that stores information as the relative alignment of two ferromagnets in a magnetic tunnel junction stack.
Asoudegi, Nima
core   +1 more source

Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application

Advanced Functional Materials, EarlyView.
From a database of 170 pentagonal 2D materials, 4 candidates exhibiting altermagnetic ordering are screened. Furthermore, the spin‐splitting and unconventional boundary states in the pentagonal 2D altermagnetic monolayer MnS2 are investigated. A MnS2‐based altermagnetic tunneling junction is designed and, through ab initio quantum transport simulations,
Jianhua Wang, Xingyue Yang, Zongmeng Yang, Jing Lu, Pin Ho, Wenhong Wang, Yee Sin Ang, Zhenxiang Cheng, Shibo Fang   +8 more
wiley   +1 more source

Magnetism and Nonlinear Charge Transport in NiFe2O4/γ‐Al2O3/SrTiO3 Heterostructure: Toward Spintronic Applications

Advanced Functional Materials, EarlyView.
In this report, we demonstrate that a crystalline phase of 52nm thick NiFe2O4 can be grown by RF sputtering on top of γ‐Al2O3(8nm)/SrTiO3 at a significantly low temperature (150 °C) without compromising the mobility and carrier density of the 2D electron gas at the γ‐Al2O3(8nm)/SrTiO3 interface.
Amit Chanda, Thor Hvid‐Olsen, Christina Hoegfeldt, Anshu Gupta, Alessandro Palliotto, Fardin Ghaffari‐Tabrizi, Maja A. Dunstan, Kasper S. Pedersen, Dae‐Sung Park, Damon J. Carrad, Thomas Sand Jespersen, Felix Trier   +11 more
wiley   +1 more source

The tunnel magnetoresistance in chains of quantum dots weakly coupled to external leads

, 2009
We analyze numerically the spin-dependent transport through coherent chains of three coupled quantum dots weakly connected to external magnetic leads. In particular, using the diagrammatic technique on the Keldysh contour, we calculate the conductance ...
Awschalom D D, Barnaś J, Fransson J, Grabert H, Grove-Rasmussen K Jørgensen H I Hayashi T Lindelof P E Fujisawa T, Ireneusz Weymann, König J, Maekawa S, Trocha P, Vernek E Büsser C A Martins G B Anda E V Sandler N Ulloa S E   +9 more
core   +1 more source

Tunneling Anisotropic Magnetoresistance in Co/AlOx/Au Tunnel Junctions [PDF]

, 2008
We observe spin-valve-like effects in nano-scaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode with respect to ...
Bode M., Chantis A. N., Chen C. D., Chou S. Y., Cowburn R. P., Giddings A. D., Gould C., Jensen A., Johansson J., Lessard A., Liu R. S., Moodera J. S., Moser J., Sahoo S., Schabes M.E. ., Shick A. B., Skomski R., Smit J., Stoner E. C., Thomson W., Wernsdorfer W., Ziese M.   +21 more
core   +1 more source

Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers [PDF]

Scientific Reports, 2015
AbstractA new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an ...
K. Wang, J. G. M. Sanderink, T. Bolhuis, W. G. van der Wiel, M. P. de Jong   +4 more
openaire   +2 more sources