Results 61 to 70 of about 12,259 (172)

Magnetic properties of epitaxial Fe$_3$O$_4$ films with various crystal orientations and TMR effect in room temperature [PDF]

, 2014
Fe$_3$O$_4$ is a ferrimagnetic spinel ferrite that exhibits electric conductivity at room temperature (RT). Although the material has been predicted to be a half metal according to ab-initio calculations, magnetic tunnel junctions (MTJs) with Fe$_3$O$_4$
Hiratani, Shungo, Kawai, Tomohiro, Matsuda, Yuya, Nagahama, Taro, Shimada, Toshihiro, Takahashi, Nozomi, Tate, Kazuya, Watanabe, Yusuke, Yanase, Takashi   +8 more
core   +2 more sources

THE EVALUATION OF THE TUNNELING MAGNETORESISTANCE MANGANITE- PMMA COMPOSITES [PDF]

Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, 2013
Lanthanum-strontium manganite containing composites were synthesized by a warm pressing technique. The LSMO precursor was prepared by modified sol-gel method.
A.V. Vasiliev, A.A. Eliseev, E.O. Anohin, L.A. Trusov   +3 more
doaj  

Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling

Nature Communications, 2019
Electric field controlled magnetism provides an energy efficient way for the operations in the spintronic devices. Here the authors show strain induced, reversible, nonvolatile electric field control of magnetization and magnetoresistance in a magnetic ...
Aitian Chen, Yan Wen, Bin Fang, Yuelei Zhao, Qiang Zhang, Yuansi Chang, Peisen Li, Hao Wu, Haoliang Huang, Yalin Lu, Zhongming Zeng, Jianwang Cai, Xiufeng Han, Tom Wu, Xi-Xiang Zhang, Yonggang Zhao   +15 more
doaj   +1 more source

Magnetic tunnel junction based on bilayer LaI2 as perfect spin filter device

npj 2D Materials and Applications
The discovery of van der Waals intrinsic magnets has expanded the possibilities of realizing spintronics devices. We investigate the transmission, tunneling magnetoresistance ratio, and spin injection efficiency of bilayer LaI2 using a combination of ...
Shubham Tyagi, Avijeet Ray, Nirpendra Singh, Udo Schwingenschlögl   +3 more
doaj   +1 more source

Tunnelling anisotropic magnetoresistance of Fe/GaAs/Ag(001) junctions from first principles: Effect of hybridized interface resonances

, 2012
Results of first-principles calculations of the Fe/GaAs/Ag(001) epitaxial tunnel junctions reveal that hybridization of interface resonances formed at both interfaces can enhance the tunnelling anisotropic magnetoresistance (TAMR) of the systems.
Sykora, Rudolf, Turek, Ilja
core   +1 more source

Tunneling magnetoresistance effect in altermagnets

Physical Review B
13 pages, 7 ...
Yu-Fei Sun, Yue Mao, Yu-Chen Zhuang, Qing-Feng Sun   +3 more
openaire   +2 more sources

Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers

Scientific Reports, 2023
Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields.
Bowei Zhou, Pravin Khanal, Onri Jay Benally, Deyuan Lyu, Daniel B. Gopman, Arthur Enriquez, Ali Habiboglu, Kennedy Warrilow, Jian-Ping Wang, Wei-Gang Wang   +9 more
doaj   +1 more source

Conductance in Co/Al2O3/Si/Al2O3 permalloy with asymmetrically doped barrier

, 2010
Permalloy magnetic tunnel junctions. Complementary low frequency noise measurements are used to understand the conductance results. The obtained data indicate the breakdown of the Coulomb blockade for thickness of the asymmetric silicon layer exceeding 1.
A. I. Larkin, E. Wolf, F. G. Aliev, J. Barnaś, J. Moodera, L. Glazman, R. Guerrero, R. Villar, S. Kogan, S. Maekawa, T. Miyazaki, T. Santos, V. K. Dugaev   +12 more
core   +1 more source

Giant magnetoresistance in perpendicularly magnetized synthetic antiferromagnetic coupling with Ir spacer

AIP Advances, 2018
Perpendicularly magnetized magnetic tunnel junction (p-MTJ) is a key element for developing high-density spin-transfer torque switching magnetoresistive random access memory.
A. Fukushima, T. Taniguchi, A. Sugihara, K. Yakushiji, H. Kubota, S. Yuasa   +5 more
doaj   +1 more source

Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

AIP Advances, 2016
Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even ...
Robert Göckeritz, Nico Homonnay, Alexander Müller, Bodo Fuhrmann, Georg Schmidt   +4 more
doaj   +1 more source