Results 101 to 110 of about 19,972 (281)

Field‐Free, Deterministic Giant Spin‐Orbit Torque Switching of 1.3 T Perpendicular Magnetization With Symmetry‐Lifted Topological Surface States

Advanced Materials, EarlyView.
We show a giant, bias‐field free, deterministic, spin‐orbit‐torque switching of perpendicular hard magnets with HC over 1.3 T. By combining the three‐fold 3m symmetry from topological insulator surface states with the rectangular mm2 symmetry from the 2 x 1 intercalation in Cr3Te4, the interface symmetry is significantly reduced into a unidirectional m
He Ren, Yawen Peng, Meixin Cheng, Yu Shi, Reza Asadi, Adam W. Tsen, Guo‐Xing Miao   +6 more
wiley   +1 more source

Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy. [PDF]

Materials (Basel), 2023
Marchewka M, Jarosz D, Ruszała M, Juś A, Krzemiński P, Płoch D, Maś K, Wojnarowska-Nowak R.   +7 more
europepmc   +1 more source

Emergent Freestanding Complex Oxide Membranes for Multifunctional Applications

Advanced Materials, EarlyView.
This review surveys freestanding oxide membranes and covers fabrication and three pathways for studies and devices: strain‐free and strained membranes, and van der Waals‐integrated heterostructures. We show how coupled oxide responses map onto these routes and cross‐couple to expand behaviors.
Baowen Li, Yanran Liu, Jinjin Liu, Josephine Si Yu See, Kaijian Xing, Dong‐Chen Qi, Xiao Renshaw Wang   +6 more
wiley   +1 more source

Structural study on Pr0.55(Ca[1-y]Sr[y])0.45MnO3 thin films on perovskite (011) substrate

, 2008
Structural study on the photo-switching system Pr{0.55}(Ca{1-y}Sr y){0.45}MnO3 thin films on perovskite (011) substrate has been made with synchrotron radiation diffraction experiment.
Miyano, Kenjiro, Sawa, Hiroshi, Takubo, Naoko, Wakabayashi, Yusuke   +3 more
core   +1 more source

Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform. [PDF]

Sci Rep, 2022
Kwan DCM, Kesaria M, Jiménez JJ, Srivastava V, Delmas M, Liang BL, Morales FM, Huffaker DL.   +7 more
europepmc   +1 more source

Designing Defect Structure and Interfacial Strain in an Epitaxial VN Bilayer Film by Tailoring N Concentration

Advanced Materials Interfaces, EarlyView.
The N concentration in an epitaxial VN bilayer is tailored from overstoichiometric V0.49N0.51 to understoichiometric V0.56N0.44. Based on ab initio, diffraction, and microscopy data, the overstoichiometric V0.49N0.51 layer contains V vacancies, N Frenkel pairs, and a high density of dislocations.
Marcus Hans, Damian M. Holzapfel, Zhuo Chen, Soheil Karimi Aghda, Michal Fečík, Daniel Primetzhofer, Zaoli Zhang, Jochen M. Schneider   +7 more
wiley   +1 more source

Pattern formation in 2-frequency forced parametric waves

, 2001
We present an experimental investigation of superlattice patterns generated on the surface of a fluid via parametric forcing with 2 commensurate frequencies.
A. B. Ezerskii, A. C. Newell, A. J. Scroggie, A. Kudrolli, A. Kudrolli, A. Kudrolli, A. Logvin, A. V. Mamaev, B. J. Gluckman, C. Wagner, C. Wagner, D. Binks, D. Binks, D. Leduc, D. P. Tse, D. Rinberg, D. Rinberg, E. A. Kuznetsov, E. Bosch, E. Pampaloni, F. Simonelli, G. H. Gunaratne, H. Arbell, H. Arbell, H. Arbell, H. Arbell, H. J. Pi, H. W. Muller, H. W. Muller, J. D. Crawford, J. D. Crawford, J. Fineberg, J. Fineberg, J. L. Hammack, J. L. Rogers, K. Kumar, K. Kumar, K. Kumar, L. Daudet, M. Bachir, M. Hoyuelos, M. Silber, M. Silber, M. Silber, M. Tlidi, M. Yethiraj, O. Lioubashevski, O. Lioubashevski, O. Lioubashevski, P. B. Umbanhowar, P. C. Matthews, P. Hall, R. Herrero, R. Lifshitz, R. Martin, S. Ciliberto, S. Douady, T. Ackemann, T. Besson, T. Frisch, U. Breiner, W. S. Edwards, W. S. Edwards, W. S. Edwards, W. Zhang, W. Zhang, W. Zimmermann   +66 more
core   +1 more source

Terahertz Volume Plasmon‐Polariton Modulation in All‐Dielectric Hyperbolic Metamaterials

Advanced Optical Materials, EarlyView.
THz volume plasmon‐polariton (VPP) propagation through plasmon‐based hyperbolic metamaterials, made of alternating layers of doped and undoped III‐V semiconductors. Abstract The development of plasmonics and related applications in the terahertz range faces limitations due to the intrinsic high electron density of the standard metals.
Stefano Campanaro, Luca Bursi, Stefano Curtarolo, Arrigo Calzolari   +3 more
wiley   +1 more source

The Influence of Etching Method on the Occurrence of Defect Levels in III-V and II-VI Materials

Nanomaterials
The influence of the etching method on the occurrence of defect levels in InAs/InAsSb type-II superlattice (T2SLs) and MCT photodiode is presented. For both analyzed detectors, the etching process was performed by two methods: wet chemical etching and ...
Kinga Majkowycz, Krzysztof Murawski, Małgorzata Kopytko, Krzesimir Nowakowski-Szkudlarek, Marta Witkowska-Baran, Piotr Martyniuk   +5 more
doaj   +1 more source

Electroluminescence and Franz–Keldysh Modulation Observed in Sn/Ge Multi‐Quantum Wells

Advanced Optical Materials, EarlyView.
We investigate the optoelectronic properties of PIN diodes based on ultrathin α‐Sn/Ge multiple quantum film structures, fabricated by molecular beam epitaxy, both experimentally and theoretically. The samples exhibit a light emission spectrum in the short‐wavelength infrared range with two transitions. Furthermore, when operating as a photodetector, we
Michael Oehme, Damiano Marian, Maurice Wanitzek, Christian Spieth, Daniel Schwarz, Florian Bärwolf, Markus Andreas Schubert, Alwin Daus, Michele Virgilio, Giovanni Capellini   +9 more
wiley   +1 more source