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Excitonic electroabsorption in type II superlattices
Applied Physics Letters, 1992Electric field dependence of the exciton absorption in the ZnSe0.35Te0.65-ZnTe type II superlattice has been studied theoretically. Large effective blue shift of the absorption edge and strong modulation of the absorption prove that type II structures can be used in visible spatial light modulators and switches.
Shaozhong Li, Jacob B. Khurgin
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Type-II Superlattice Infrared Detectors
2011Publisher Summary This chapter provides an overview of type-II superlattice infrared detectors. The type-II InAs/GaSb superlattices have several fundamental properties that make them suitable for infrared detection: (1) their band gaps can be made arbitrarily small by design, (2) they are more immune to band-to-band tunneling compared with bulk ...
David Z-Y. Ting +6 more
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Modeling of type II superlattice photodiodes
SPIE Proceedings, 2007This paper reports on the IR system level modeling for a FPA based on type II superlattice photodiodes. The predicted performance of the super lattice detectors is based on published values from device models and measured results. A top level description of the sensor model is given and how it is used to determine system level trades.
M. DeFlumere, H. Stewart, W. Watson
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Excitonic molecules in type-II superlattices
Superlattices and Microstructures, 1998Abstract Excitonic molecules in GaAs/AlAs type-II superlattices are numerically investigated. In spite of large difference of electronic structures between type-II and type-I superlattices, variational calculations show that the configuration of particles is similar to that in type-I superlattices.
T. Tsuchiya, S. Katayama, T. Ando
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Carrier filtering in type II superlattices
Solid State Communications, 1993The conductivity mechanisms in type II semiconductor superlattices (SL) are studied theoretically. It is shown that there is a strong carrier filtering effect in type II SLs that is more flexible than filtering in type I SLs. Potential applications of the scheme are examined.
Shaozhong Li, Jacob B Khurgin
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Electroabsorption in the type II superlattices
Applied Physics Letters, 1992Electric field dependence of the optical absorption in the ZnSe0.35Te0.65-ZnSe type II superlattice has been studied. An extremely large blue shift of the absorption edge found for the structure makes it an attractive choice for the waveguide visible light modulators.
Shaozhong Li, Jacob B. Khurgin
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Deep levels in type-II InAs/GaSb superlattices
Physical Review B, 1992The theory of ${\mathit{sp}}^{3}$-bonded substitutional deep impurity levels is extended to type-II gap-misaligned InAs/GaSb superlattices. The theory predicts that some shallow impurities (donors or acceptors) in either bulk InAs or bulk GaSb can become deep traps in a thin-layer superlattice. This happens because the deep levels associated with point
, Shen, , Ren, , Dow
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Antimony-Based Type-II Superlattice Photodetectors
2010Abstract : Fundamental research issues and novel designs of Sb-based superlattice photodetectors are reported. These include the following: Accomplishment 1. Growth of new InAs/GaSb type-II superlattice material using MOCVD. We report the improved SL quality based on different interfacial layers (IF) and detector results using new growth schemes ...
Russell D. Dupuis, Shun L. Chuang
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Type-II superlattice: Inversion of the dielectric function
Physical Review B, 1986Explicit analytic results are presented here for the direct position-space inversion of the longitudinal dielectric function of a type-II biplane superlattice where electron-hole motions are confined to be on pairs of parallel two-dimensional planes. The results are expressed in terms of the dynamic nonlocal two-dimensional polarizabilities of the 2 ...
, Horing, , Mancini
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Electric-field domain formation in type-II superlattices
Physical Review B, 1996Static electric-field domains as well as current self-oscillations due to domain-wall oscillations have been observed in undoped, type-II GaAs-AlAs superlattices under photoexcitation. Photoluminescence measurements clearly demonstrate the coexistence of low- and high-field domains in the static and oscillating domain voltage regime.
, Mimura +7 more
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