Results 261 to 270 of about 19,972 (281)

Antimonide type-II superlattice barrier infrared detectors

SPIE Proceedings, 2017
We provide a brief overview of recent progress in III-V semiconductor infrared photodetectors resulting from advances in infrared detector materials, including type-II superlattices (T2SL) and InAsSb alloy, and the unipolar detector architecture. We summarize T2SL unipolar barrier infrared detector and focal plane array development at the NASA Jet ...
David Z. Ting, Alexander Soibel, Arezou Khoshakhlagh, Linda Höglund, Sam A. Keo, Sir B. Rafol, Cory J. Hill, Anita M. Fisher, Edward M. Luong, Jean Nguyen, John K. Liu, Jason M. Mumolo, Brian J. Pepper, Sarath D. Gunapala   +13 more
openaire   +1 more source

High-performance MWIR type-II superlattice detectors

SPIE Proceedings, 2013
A VGA format type-II superlattice focal plane array (FPA) for the mid-wave infrared (MWIR) atmospheric window has been designed, manufactured and characterized. The detector material is based on a heterojunction structure with a barrier that effectively decreases the Shockley-Read-Hall based component of the dark current.
Henk Martijn, Carl Asplund, Rickard Marcks von Würtemberg, Hedda Malm   +3 more
openaire   +1 more source

Type-II superlattice photodetectors versus HgCdTe photodiodes

Sensors, Systems, and Next-Generation Satellites XXIII, 2019
Since the first paper published by Sakaki and Esaki in 1978, it is well known that InAs and GaSb constitute a nearly lattice-matched material system offering great flexibility in the design of IR optoelectronic devices. After four decades, the III-V type-II superlattice (T2SL) detector technology is under strong development as a possible alternative to
A. Rogalski, P. Martyniuk, M. Kopytko
openaire   +1 more source

Type-II superlattice unipolar barrier infrared detectors

2016 IEEE Photonics Conference (IPC), 2016
Recent material and device architecture development have led to significant advances in III-V semiconductor infrared detectors and focal plane arrays. We provide an overview of high-performance type-II superlattice based unipolar barrier infrared detectors.
David Z. Ting, Alexander Soibel, Linda Hoglund, Arezou Khoshakhlagh, Cory J. Hill, Sam A. Keo, Sir B. Rafol, Anita M. Fisher, Edward M. Luong, Jason M. Mumolo, John K. Liu, Brian J. Pepper, Sarath D. Gunapala   +12 more
openaire   +1 more source

Multispectral imaging with type II superlattice detectors

SPIE Proceedings, 2012
Infrared (IR) focal plane arrays (FPAs) with multispectral detector elements promise significant advantages for airborne threat warning, surveillance, and targeting applications. At present, the use of type II superlattice (T2SL) structures based on the 6.1A-family materials (InAs, GaSb, and AlSb) has become an area of interest for developing IR ...
Gamini Ariyawansa, Joshua M. Duran, Matt Grupen, John E. Scheihing, Thomas R. Nelson, Michael T. Eismann   +5 more
openaire   +1 more source

Collective modes of type II semiconductor superlattices

Surface Science Letters, 1984
Abstract A general formulation is developed to describe the electronic collective modes of a type II superlattice as exemplified by the InAs/GaSb system. Dispersion relations are evaluated in the limit of weak coupling between different intersubband excitations and the intrasubband modes.
A. Tselis, G.Gonzalez De La Cruz, J.J. Quinn   +2 more
openaire   +1 more source

Type II superlattice technology for LWIR detectors

SPIE Proceedings, 2016
SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures grown on GaSb. The XBn/XBp family of barrier detectors enables diffusion limited dark currents, comparable with MCT Rule-07, and high quantum efficiencies.
P. C. Klipstein, E. Avnon, D. Azulai, Y. Benny, R. Fraenkel, A. Glozman, E. Hojman, O. Klin, L. Krasovitsky, L. Langof, I. Lukomsky, M. Nitzani, I. Shtrichman, N. Rappaport, N. Snapi, E. Weiss, A. Tuito   +16 more
openaire   +1 more source

Magnetization studies of type-II antiferromagnetic EuTe/PbTe superlattices

Physical Review B, 1996
Molecular-beam-epitaxy grown EuTe(\ensuremath{\xi} )/PbTe(\ensuremath{\eta} ) short-period superlattices (SL's) with \ensuremath{\xi}=3, 4, 5 magnetic EuTe (111) monolayers alternating with \ensuremath{\eta} nonmagnetic PbTe monolayers, such that \ensuremath{\eta} = 3\ensuremath{\xi}, were studied by superconducting quantum interference device ...
, Chen, , Dresselhaus, , Dresselhaus, , Springholz, , Pichler, , Bauer   +5 more
openaire   +2 more sources

Optical Properties of an InGaAlAs/InP Type-II Superlattice

Japanese Journal of Applied Physics, 1993
Optical properties of an InGaAlAs/InP type-II superlattice are studied. Electroluminescence, transmissivity, photocurrent, and electroabsorption in the superlattice are measured at room temperature. The results are compared to those in bulk InP.
H. Kobayashi, Y. Kawamura, H. Iwamura
openaire   +1 more source

High-frequency conductivity of type-I superlattices

Physical Review B, 1985
By using a method which employs a kinetic description and linear-response theory, we calculated the conductivity of electron-ion many-layer system (type-I superlattices) in the high-frequency and long-wavelength limits. Here electromagnetic radiation is taken to be a homogeneous, oscillating electric field.
, Tzoar, , Zhang
openaire   +3 more sources