Results 181 to 190 of about 21,917 (263)

Ultrafast Laser Technology [PDF]

open access: yesLaser Technik Journal, 2017
openaire   +1 more source

Multi‐Vth IGZO FETs Enabled by Continuous‐wave Laser Scanning Annealing for Low Thermal Budget 3D Integration

open access: yesAdvanced Electronic Materials, EarlyView.
A novel strategy is used to fabricate multi‐threshold‐voltage (multi‐Vth) IGZO FETs via continuous‐wave laser scanning annealing (CW‐LSA). By tuning the laser power and scan speed, low, standard, and high Vth values of 0.22, 0.42, and 0.62 V, respectively, were achieved on a single wafer with excellent uniformity (coefficient of variation: 2.17%–6.61%).
Jun‐Hyeok Choi   +8 more
wiley   +1 more source

Intensity Modulation Effects on Ultrafast Laser Ablation Efficiency and Defect Formation in Fused Silica. [PDF]

open access: yesNanomaterials (Basel)
Yoshitomi D   +5 more
europepmc   +1 more source

Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS2 Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
MoS2 memristors typically use evaporated noble metal electrodes. This study compares Pd, Ni, and Al electrodes and sputtered versus evaporated deposition. Pd is passive, while Ni damages MoS2, yielding poor switching. Sputtered Al enables reproducible ECM‐type switching with 95% yield, whereas evaporated Al forms an interfacial oxide that suppresses ...
Dennis Braun   +15 more
wiley   +1 more source

Ultrafast Laser Processing for High-Aspect-Ratio Structures. [PDF]

open access: yesNanomaterials (Basel)
Qin M   +6 more
europepmc   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

open access: yesAdvanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki   +3 more
wiley   +1 more source

ZnO Nanowires for Ultraviolet Detection: Recent Developments, Challenges, and Future Outlook

open access: yesAdvanced Electronic Materials, EarlyView.
This work provides a comprehensive review of Zinc Oxide (ZnO) nanowires for high‐performance ultraviolet (UV) photodetection. By analyzing unique device physics and various detector architectures, it unveils strategies to overcome current performance limitations regarding speed and sensitivity.
Ala K. Jehad   +4 more
wiley   +1 more source

Stabilization of Ultrafast Domain Wall Motion by Edge‐Anisotropy Engineering in Ferrimagnetic Nanowires

open access: yesAdvanced Electronic Materials, EarlyView.
Localized laser annealing transforms distorted, edge‐pinned domain‐wall motion in ferrimagnetic Pt/GdFe nanowires into straight, stable, and ultrafast propagation. Experiments and micromagnetic simulations reveal an optimum anisotropy‐engineering window in which moderate edge softening suppresses pinning, whereas excessive anisotropy reduction or ...
Mojtaba Mohammadi   +5 more
wiley   +1 more source

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