Results 151 to 160 of about 80,867 (311)

An antibonding valence band maximum enables defect-tolerant and stable GeSe photovoltaics. [PDF]

Nat Commun, 2021
Liu SC, Dai CM, Min Y, Hou Y, Proppe AH, Zhou Y, Chen C, Chen S, Tang J, Xue DJ, Sargent EH, Hu JS.   +11 more
europepmc   +1 more source

Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

, 2008
The valence band offset (VBO) of the wurtzite ZnO/4H-SiC heterojunction is directly determined to be 1.61 +/- 0.23 eV by x-ray photoelectron spectroscopy.
Yang, SY, Sun, GS, Chen, YH, Zhang, RQ, Liu, XL, Zhang, PF, Fan, HB, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hbfan@semi.ac.cn, Wei, HY, Zhu, QS, Wang, ZG, Jiao, CM, Fan, HB, qszhu@semi.ac.cn   +12 more
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Kelvin Probe Force Microscopy in Bionanotechnology: Current Advances and Future Perspectives

Advanced Materials, EarlyView.
Kelvin probe force microscopy (KPFM) enables the nanoscale mapping of electrostatic surface potentials. While widely applied in materials science, its use in biological systems remains emerging. This review presents recent advances in KPFM applied to biological samples and provides a critical perspective on current limitations and future directions for
Ehsan Rahimi, Mario Palacios‐Corella, Arjan Mol, Salvador Pané, Josep Puigmartí‐Luis   +4 more
wiley   +1 more source

Carbon supported Pd-Cu nanoalloys: support and valence band structure influence on reduction and oxidation reactions. [PDF]

Nanoscale Adv, 2021
Castegnaro MV, Gorgeski A, Alves MCM, Morais J.   +3 more
europepmc   +1 more source

Interface properties and valence-band discontinuity of MnS/ZnSe heterojunctions

, 1996
Tetrahedrally bonded, metastable zinc-blende single-crystalline, single-phase MnS was grown by molecular-beam epitaxy on ZnSe buffer layers grown on GaAs(100) substrates.
Sporken, Robert; id_orcid, Caudano, Roland, Sivananthan, Sivalingam, Wang, L.   +3 more
core   +1 more source

Counterintuitive Fluorescence Blue Shift in Symmetry Breaking Dicationic Bis(indolium) with Two‐Photon Absorption Properties for NIR Living Cell Imaging

Advanced Materials, EarlyView.
Highly water‐soluble dicationic bis(indolium) dyes have been prepared, showing excellent two‐photon absorption and light emission. Their fluorescence behavior discloses an unusual increasing blue shift with increasing solvent polarity, which, in parallel, is beneficial for enhanced detection in biological media.
Carlos Benitez‐Martin, Jose M. Marin‐Beloqui, Juan T. López Navarrete, Juan Casado, Francisco Najera, Ezequiel Perez‐Inestrosa   +5 more
wiley   +1 more source

Valence band structure and charge distribution in the layered lanthanide-doped CuCr_0.99Ln_0.01S₂ (Ln = La, Ce) solid solutions. [PDF]

Sci Rep, 2021
Korotaev EV, Syrokvashin MM, Filatova IY, Kalinkin AV, Sotnikov AV.   +4 more
europepmc   +1 more source

Beyond Presumptions: Toward Mechanistic Clarity in Metal‐Free Carbon Catalysts for Electrochemical H2O2 Production via Data Science

Advanced Materials, EarlyView.
Metal‐free carbon catalysts enable the sustainable synthesis of hydrogen peroxide via two‐electron oxygen reduction; however, active site complexity continues to hinder reliable interpretation. This review critiques correlation‐based approaches and highlights the importance of orthogonal experimental designs, standardized catalyst passports ...
Dayu Zhu, Hsi‐wen Wu, Xiao Wang, Jie Zhang   +3 more
wiley   +1 more source

Direct observation of spin-resolved valence band electronic states from a buried magnetic layer with hard X-ray photoemission. [PDF]

Sci Technol Adv Mater, 2021
Ueda S, Sakuraba Y.
europepmc   +1 more source

Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

, 2009
X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the ZnO/SrTiO3 heterojunction. It is found that a type-II band alignment forms at the interface. The VBO and conduction band offset (CBO) are determined to be 0.62
Liu XL, Jia CH Chinese Acad Sci Inst Semicond Key Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. E-mail Address: yhchen@red.semi.ac.cn, Yang AL, Jia CH, Chen YH, Zhou XL, Yang SY, Wang ZG, Zheng GL   +8 more
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