Results 131 to 140 of about 80,867 (311)
Valence band offset of ZnO/GaAs heterojunction measured by x-ray photoelectron spectroscopy
X-ray photoelectron spectroscopy has been used to measure the valence band offset at the ZnO/GaAs heterojunction interface. The valence band offset is determined to be 2.39 +/- 0.23 eV.
Zhang, PF, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangpanf@semi.ac.cn +11 more
core
Redox dual‐defects (Cs substitution and O vacancies) in 2D hydrated WO3 steer O2 activation toward selective singlet oxygen evolution. WO‐CO achieves 8.6–15.8 times higher 1O2 production than single‐defect or pristine catalysts, enabling efficient pollutant mineralization via a pathway‐selective photocatalytic mechanism.
Sheng‐Qi Guo +8 more
wiley +1 more source
Oxygen Vacancy and Valence Band Structure of Ba0.5Sr0.5Fe1-xCuxO3-δ (x = 0-0.15) with Enhanced ORR Activity for IT-SOFCs. [PDF]
Lim T, Jo K, Lee H.
europepmc +1 more source
Fluorene‐functionalized spiro‐phenothiazine (PTZ‐Fl) exhibits strong Li+ affinity and thermal stability, enabling a PCE of 25.75% in small‐area cells and 22.07% in 25 cm2 modules. Under ISOS‐L3 conditions, PTZ‐Flbased devices retain over 80% efficiency after 1000 hours, demonstrating superior stability and scalability compared to spiro‐OMeTAD for next ...
Javier Urieta‐Mora +17 more
wiley +1 more source
Attosecond intra-valence band dynamics and resonant-photoemission delays in W(110). [PDF]
Heinrich S +6 more
europepmc +1 more source
Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy
X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) at the GaN/Ge heterostructure interface. The VBO is directly determined to be 1.13 +/- 0.19 eV, according to the relationship between the conduction band offset Delta
Liu XL (Liu Xiang-Lin) +10 more
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Valence Band Quantization in a Spherical Quantum Dot
An analytical solution of the effective mass equation for a spherical valence band in cubic semiconductors is presented. The full degeneracy of the valence band, i.e.
Buczko, R.
core +1 more source
AI‐Assisted Workflow for (Scanning) Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling. Abstract (Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the functional properties of ...
Marc Botifoll +19 more
wiley +1 more source
Hidden spin-orbital texture at the Γ ¯ -located valence band maximum of a transition metal dichalcogenide semiconductor. [PDF]
Clark OJ +3 more
europepmc +1 more source
The seminal transformation of a 2D‐COF (SURFCOF‐IMDEA1) into a 2D porous COF (SURFCOF‐IMDEA2) on Au(111) by a sequential C‐C coupling and ladderization triggered by thermal annealing steps at increasing temperatures is reported. Abstract The development of covalent organic frameworks (COFs) is currently a primary objective in materials science, taking ...
Ana Barragán +11 more
wiley +1 more source

