Results 111 to 120 of about 80,867 (311)

A Holistic Stabilization of the Anode in Lithium‐Sulfur Batteries Through a Ternary Alloy Fusion

open access: yesAdvanced Functional Materials, EarlyView.
LiTeAl anodes fabricated through a scalable thermal fusion technique holistically addresses the stability issues faced by lithium‐metal anodes in lithium–sulfur batteries. Aluminum forming a skeletal network with lithium suppresses dendrite growth and enhances energy density, while tellurium forming a robust SEI facilitates Li+‐ion flow.
Akhil Shenoy, Arumugam Manthiram
wiley   +1 more source

Manifesting Epoxide and Hydroxyl Groups in XPS Spectra and Valence Band of Graphene Derivatives. [PDF]

open access: yesNanomaterials (Basel), 2022
Rabchinskii MK   +13 more
europepmc   +1 more source

Valence band offset of MgO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

open access: yes, 2008
The valence band offset (VBO) of MgO (111)/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 3.65 +/- 0.23 eV and the conduction band offset is deduced to be 0.92 +/- 0.23 eV, indicating ...
Zhang, BL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: zhangbaoli@semi.ac.cn   +11 more
core  

Ultrasmall High‐Entropy Materials: Nanoscale Effects, Synthesis, and Mechanistic Insights

open access: yesAdvanced Functional Materials, EarlyView.
This review article focuses on sub‐10 nm high‐entropy materials that combine nanoscale design with complex compositions for next‐generation applications. ABSTRACT Ultrasmall high‐entropy nanomaterials (USHENMs, <10 nm) merge multicomponent chemistry with size‐dependent effects, forming a distinct class of materials with unprecedented properties.
Yueyue He   +5 more
wiley   +1 more source

Spatial microheterogeneity in the valence band of mixed halide hybrid perovskite materials. [PDF]

open access: yesChem Sci, 2022
Erbing A   +5 more
europepmc   +1 more source

Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

open access: yes, 2008
The valence band offset (VBO) of InN/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 0.55 +/- 0.23 eV and the conduction band offset is deduced to be -2.01 +/- 0.23 eV, indicating that the
Sun GS   +12 more
core  

Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu3BiS3 for Photovoltaics [PDF]

open access: yes, 2019
The earth-abundant semiconductor Cu3BiS3 (CBS) exhibits promising photovoltaic properties and is often considered analogous to the solar absorbers copper indium gallium diselenide (CIGS) and copper zinc tin sulfide (CZTS) despite few device reports.
Murgatroyd, Philip A. E.   +23 more
core   +1 more source

Trace Sulfur‐Doping Boosts NiCo Heterostructured Catalyst for Selective Glycerol‐to‐Formic Acid Electroreforming

open access: yesAdvanced Functional Materials, EarlyView.
A sulfur‐doped Ni–Co heterostructured catalyst is rationally designed to regulate interfacial electronic and adsorption properties for selective glycerol electrooxidation. The synergistic Ni–Co active sites promote hydroxide activation and glycerol adsorption, enabling efficient formic acid production and durable hydrogen generation under continuous ...
Lingqin Shen   +4 more
wiley   +1 more source

Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

open access: yesNanoscale Research Letters, 2011
The valence band offset (VBO) of wurtzite indium nitride/strontium titanate (InN/SrTiO3) heterojunction has been directly measured by x-ray photoelectron spectroscopy.
Li Zhiwei   +7 more
doaj  

Field emission of lower energy valence band electrons from 2-dimensional materials [PDF]

open access: yesAPL Electronic Devices
Vertical field emission for two-dimensional (2D) materials was normally assumed to have dominant emission by the conduction band electrons near to the Fermi surface with a linear scaling of ln(J/Fβ) ∝ 1/F and β = 1, which is different from the classical ...
L. K. Ang, Ying Xiong
doaj   +1 more source

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