Results 71 to 80 of about 80,867 (311)

Ohmic losses in valence-band photoemission experiments [PDF]

Journal of Electron Spectroscopy and Related Phenomena, 2001
7 postscript ...
Haslinger, Robert, Joynt, Robert
openaire   +2 more sources

How the Carrier Mobility and Seebeck Coefficient of Doped Semiconducting Polymers Are Controlled by Counterion Interactions and Mesoscale Order

Advanced Functional Materials, EarlyView.
Conventional doping of P3HT with F4TCNQ results in poor charge transport. However, when F4TCNQ is exchanged with LiTFSI, the transport characteristics are greatly enhanced. We find the increase in charge transport is directly related to an increase in the mesoscale ordering of P3HT, resulting in longer and better‐connected transport pathways.
Quynh M. Duong, Diego Garcia Vidales, Xinyu Liu, Charlene Z. Salamat, Austin Ready, Hashim Al Khunaizi, Mei Matsumoto, Alexander M. Spokoyny, Sarah H. Tolbert, Benjamin J. Schwartz   +9 more
wiley   +1 more source

Elucidation of the highest valence band and lowest conduction band shifts using XPS for ZnO and Zn0.99Cu0.01O band gap changes

Results in Physics, 2016
ZnO and Zn0.99Cu0.01O nanostructures were prepared by a simple sol–gel method. The band gaps of the materials were systematically studied based on the dependence of the dimensions of the nanostructures as well as the presence of a dopant material, Cu ...
N. Kamarulzaman, M.F. Kasim, N.F. Chayed
doaj   +1 more source

Characterizing critical behavior and band tails on the metal-insulator transition in structurally disordered two-dimensional semiconductors: Autocorrelation and multifractal analysis

Physical Review Research, 2023
Our previous study observed the localization-delocalization transition and critical quantum fluctuations of the local density of states (LDOS) on the structurally disordered two-dimensional (2D) semiconductor MoS_{2}.
Bong Gyu Shin, Ji-Hoon Park, Jing Kong, Soon Jung Jung   +3 more
doaj   +1 more source

valence band

, 2014
Citation: 'valence band' in the IUPAC Compendium of Chemical Terminology, 3rd ed.; International Union of Pure and Applied Chemistry; 2006. Online version 3.0.1, 2019. 10.1351/goldbook.V06589 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms.
openaire   +1 more source

Valence-band and surface electronic structure of CdTe [PDF]

Physical Review B, 1988
Published by Inst., Woodbury ...
Magnusson, K. O., Flodström, S. A., Persson, P. E. S.   +2 more
openaire   +3 more sources

Rationally Designed Bilayer Passivation Strategy for High‐Performance Vacuum‐Processed Perovskite Solar Cells

Advanced Functional Materials, EarlyView.
A bilayer “Anchor‐and‐Seal” passivation strategy using EDAI2 and 4MeO‐PEAI effectively mitigates surface defects in vacuum‐processed perovskite films through synergistic hydrogen bonding and Lewis base coordination. This approach optimizes interfacial energy alignment and suppresses non‐radiative recombination, enabling vacuum‐deposited p‐i‐n ...
Mohammadhossein Kohan, Sang‐Heon Lee, Jaswinder Singh, Sung‐Nam Kwon, Seok‐In Na   +4 more
wiley   +1 more source

Valence-band orbital character of CdO: A synchrotron-radiation photoelectron spectroscopy and density functional theory study

, 2014
Valence-band orbital character of CdO: A synchrotron-radiation photoelectron spectroscopy and density functional theory ...
RG Egdell (15825875), TL Lee (7785620), J Zúñiga-Pérez (13484245), DJ Payne (15825863), JJ Mudd (15825944), CF McConville (14464260), V Muñoz-Sanjosé (13484248)   +6 more
core   +1 more source

BAND ALIGNMENT OF ULTRATHIN GIZO/SiO2/Si HETEROSTRUCTURE DETERMINED BY ELECTRON SPECTROSCOPY

Makara Seri Sains, 2011
Amorphous GaInZnO (GIZO) thin films are grown on SiO2/Si substrate by the RF magnetron sputtering method. By thecombination of measured band gaps from reflection energy loss spectroscopy (REELS) spectra and valence band fromX-ray photo-electron ...
Hee Jae Kang2, Sri Dewi Astuty Ilyas, Dahlang Tahir   +2 more
doaj  

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) Heterojunctions

Nanoscale Research Letters, 2018
The energy band alignment of ZnO/β-Ga2O3 ( 2¯01 $$ \overline{2}01 $$) heterojunction was characterized by X-ray photoelectron spectroscopy (XPS). The ZnO films were grown by using atomic layer deposition at various temperatures.
Shun-Ming Sun, Wen-Jun Liu, Yi-Fan Xiao, Ya-Wei Huan, Hao Liu, Shi-Jin Ding, David Wei Zhang   +6 more
doaj   +1 more source