Results 101 to 110 of about 1,753 (147)

Van der Waals β-Ga₂O₃ thin films on polycrystalline diamond substrates. [PDF]

Nat Commun
Ning J, Yang Z, Wu H, Dong X, Zhang Y, Chen Y, Zhang X, Wang D, Hao Y, Zhang J.   +9 more
europepmc   +1 more source

III-Nitride MEMS drum resonators on flexible metal substrates. [PDF]

Microsyst Nanoeng
Kassem A, Gujrati R, Bourrier D, Ayela C, Mathieu F, Dufour I, Nicu L, Ottapilakkal V, Vuong P, Sundaram S, Hunt W, Ougazzaden A, Leichlé T, Salvestrini JP.   +13 more
europepmc   +1 more source

Superconductivity and suppressed monoclinic distortion in FeTe films enabled by higher-order epitaxy. [PDF]

Nat Commun
Sato Y, Nagahama S, Kitou S, Sagayama H, Belopolski I, Yoshimi R, Kawamura M, Tsukazaki A, Kanazawa N, Nomoto T, Arita R, Arima TH, Kawasaki M, Tokura Y.   +13 more
europepmc   +1 more source

Moiré-Induced Electronic Reconstruction in van der Waals Heterobilayer PtSe₂/PtTe₂. [PDF]

ACS Nano
Liao YS, Wang RY, Tsai HW, Chen GH, Chan HH, Hsieh HT, Cheng CM, Lin CL, Lin MK, Chou JP.   +9 more
europepmc   +1 more source

Wafer-scale uniform epitaxy of transferable 2D single crystals for gate-all-around nanosheet field effect transistors. [PDF]

Nat Commun
Xue C, Tan C, Gao X, Tang J, Sun W, Yin Y, Wang M, Gao X, An H, Fu B, Liu W, Wang Y, Li Y, Ding F, Peng H.   +14 more
europepmc   +1 more source

Link between graphene features and the resulting functionality of quasi-van der Waals Zn₃P₂.

CrystEngComm
Hagger T, Rabelo Freitas H, Mastropasqua C, El Alouani A, Marinoni S, Kawashima N, Lemerle R, Wodzislawski KA, Dede D, Botti S, Spadaro MC, Piazza V, Michon A, Arbiol J, Fontcuberta I Morral A.   +14 more
europepmc   +1 more source

Magnetic Anisotropy Modulation via van der Waals Gap Engineering in 2D Ferromagnet Fe₄GeTe₂. [PDF]

Adv Sci (Weinh)
Xie W, Wei G, Zhao T, Wang H, Li J, Gao J, Yu P, Wang Z, Gao F, Mangin S, Sun Z, Zhao W, Zhang J, Nie T.   +13 more
europepmc   +1 more source

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Van der Waals Epitaxial Double Heterostructure: InAs/Single‐Layer Graphene/InAs

Advanced Materials, 2013
Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As-polar direction, indicating polarity inversion of the double heterostructures. First-principles and density functional calculations
Hong, Young Joon, Yang, Jae Won, Lee, Wi Hyoung, Ruoff, Rodney S., Kim, Kwang S., Fukui, Takashi   +5 more
openaire   +5 more sources

Ultrasharp interfaces grown with Van Der Waals epitaxy

Surface Science Letters, 1986
Abstract Van der Waals epitaxy, which we have recently developed, has opened a new way to fabricate many kinds of ultrathin heterostructures consisting of metals, semiconductors and insulators by using various transition metal dichalcogenide materials.
Atsushi Koma, Kazuki Yoshimura
openaire   +1 more source

Van der Waals epitaxy of tunable moirés enabled by alloying

Nature Materials, 2023
The unique physics in moiré superlattices of twisted or lattice-mismatched atomic layers holds great promise for future quantum technologies. However, twisted configurations are thermodynamically unfavourable, making accurate twist angle control during growth implausible.
Matthieu Fortin-Deschênes, Kenji Watanabe, Takashi Taniguchi, Fengnian Xia   +3 more
openaire   +2 more sources