Results 91 to 100 of about 1,850 (178)

Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation

New Journal of Physics, 2015
Monolayer (ML) transition metal dichalcogenides (TMDs) are of great research interest due to their potential use in ultrathin electronic and optoelectronic applications. They show promise in new concept devices in spintronics and valleytronics.
L Jiao, H J Liu, J L Chen, Y Yi, W G Chen, Y Cai, J N Wang, X Q Dai, N Wang, W K Ho, M H Xie   +10 more
doaj   +1 more source

Structural properties of Bi thin film grown on Si (111) by quasi-van der Waals epitaxy. [PDF]

Sci Rep, 2022
Chou C, Wu BX, Lin HH.
europepmc   +1 more source

Exploring Metal‐Organic Molecular Beam Epitaxy as an Alternative Pathway towards 2D Transition Metal Dichalcogenides WSe2 and WS2

Small Structures
A new approach for the growth of vertical 2D van‐der‐Waals heterostructures is reported: Using metal‐organic molecular beam epitaxy (MOMBE), aspects of chemical and physical vapor deposition are combined to grow ultrathin films of WX2 (X = Se, S) on ...
Adrian Schütze, Philip Schädlich, Thomas Seyller, Fabian Göhler   +3 more
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Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer. [PDF]

Sci Adv, 2021
Ren F, Liu B, Chen Z, Yin Y, Sun J, Zhang S, Jiang B, Liu B, Liu Z, Wang J, Liang M, Yuan G, Yan J, Wei T, Yi X, Wang J, Zhang Y, Li J, Gao P, Gao P, Liu Z, Liu Z.   +21 more
europepmc   +1 more source

Toward Large-Scale Ga₂O₃ Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers. [PDF]

ACS Appl Mater Interfaces, 2021
Min JH, Li KH, Kim YH, Min JW, Kang CH, Kim KH, Lee JS, Lee KJ, Jeong SM, Lee DS, Bae SY, Ng TK, Ooi BS.   +12 more
europepmc   +1 more source

Van der Waals epitaxy in graphene heterostructures [PDF]

Graphene — a two-dimensional sheet of carbon atoms — has surged into recent interest with its host of remarkable properties and its ultimate thinness. However, graphene combined with other materials is starting to attract more attention. These heterostructures can be important for production routes, incorporating graphene into existing technologies, or
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Direct Growth of Wafer‐Scale Self‐Separated GaN on Reusable 2D Material Substrates

Advanced Science
Free‐standing gallium nitride has been prepared using various methods; however, the removal of the original substrate is still challenging with low success rates.
Chang‐Hsun Huang, Chia‐Yi Wu, Yi‐Chia Chou   +2 more
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Mixed-dimensional InAs nanowire on layered molybdenum disulfide heterostructures via selective-area van der Waals epitaxy. [PDF]

Nanoscale Adv, 2021
Baboli MA, Abrand A, Burke RA, Fedorenko A, Wilhelm TS, Polly SJ, Dubey M, Hubbard SM, Mohseni PK.   +8 more
europepmc   +1 more source

Single‐Crystalline β‐Ga2O3 Homoepitaxy on a Near Van der Waals Surface of (100) Substrate

Advanced Science
Gallium oxide (Ga₂O₃) is a promising wide‐bandgap semiconductor for power devices, offering high breakdown voltage and low on‐resistance. Among its polymorphs, β‐Ga₂O₃ stands out due to the availability of high‐quality, large‐area single‐crystalline ...
Tong Jiang, Hao Wang, Huaze Zhu, Junwei Cao, Xiaoqing Huo, Zhiqing Yang, Junshuai Li, Yaqing Ma, Shengnan Zhang, Xiang Xu, Wei Kong   +10 more
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Sapphire facet engineering for van der Waals epitaxy of 2D semiconductors by MOCVD

Nano Research
The growth of atomically thin transition metal dichalcogenide (TMDC) films via van der Waals (vdW) epitaxy offers a promising route to overcome the stringent lattice-matching constraints of conventional heteroepitaxy.
Wei Lyu, Luneng Zhao, Lintao Li, Renwei Jing, Yuan Huang, Feng Ding, Junfeng Gao, Yufeng Hao   +7 more
doaj   +1 more source