Results 101 to 110 of about 1,850 (178)

Core–Shell WS2@WTe2/MoTe2 Nanotubes

Small Structures
WTe2 and MoTe2 are materials with a layered structure (2D materials) belonging to the transition metal dichalcogenide family of compounds. Their topological 1T′ polytype has not been fabricated and studied in a 1D nanotubular structure, so far.
Vojtech Kundrat, Lothar Houben, Jakub Zalesak, David Holec, Iddo Pinkas, Reshef Tenne   +5 more
doaj   +1 more source

Large area van der Waals epitaxy of high-mobility two-dimensional tellurium on silicon

npj 2D Materials and Applications
The two-dimensional form of tellurium, named tellurene, holds intriguing properties for a broad range of applications. Here, the large area growth by molecular beam epitaxy of tellurium on Sb-passivated Si(111) is demonstrated.
Stefania Isceri, Michael Hanke, Giovanni Gandini, Maria C. Paolozzi, Dominik Kriegner, Omar Abou El Kheir, Antonio M. Mio, Federico Fagiani, Ilaria Martinelli, Salvatore Macis, Manfred Ramsteiner, Stefano Lupi, Christian Rinaldi, Stefano Cecchi   +13 more
doaj   +1 more source

Atomic‐Scale Epitaxy for Tailoring Crystalline GeSbTe Alloys Into Bidimensional Phases

Advanced Materials Interfaces
In this study, we establish an accurate growth diagram—describing the phase, composition, and atomic stacking of Ge‐Sb‐Te alloys (GST)—that can be used as a prediction tool for thin film deposition.
Valeria Bragaglia, Fabrizio Arciprete, Simone Prili, Yukihiko Takagaki, Antonio Massimiliano Mio, Riccardo Mazzarello, Jos Emiel Boschker, Raffaella Calarco   +7 more
doaj   +1 more source

van der Waals epitaxy of GaN on graphene for photonics

, 2018
De par ses propriétés physiques remarquables, le GaN est un matériau très attrayant pour la fabrication de composants photoniques. Sa synthèse est en revanche très complexe et reste un obstacle à son utilisation. L’hétéroépitaxie est, pour l’heure, la technique de synthèse la plus employée mais l’absence de substrats cristallins aux propriétés proches ...
openaire   +1 more source

Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS₂ for scalable 2D electronics. [PDF]

Nat Commun
Sakuma Y, Atsumi K, Hiroto T, Nara J, Ohtake A, Ono Y, Matsumoto T, Muta Y, Takeda K, Kano E, Yasuno T, Yang X, Ikarashi N, Suzuki A, Ikezawa M, Li S, Nishimura T, Kanahashi K, Nagashio K.   +18 more
europepmc   +1 more source

Van der Waals Epitaxy of 2D Gallium Telluride on Graphene: Growth Dynamics and Principal Component Analysis. [PDF]

Small
Bissolo M, Hanke M, Calarco R, Finley JJ, Koblmüller G, Lopes JMJ, Zallo E.   +6 more
europepmc   +1 more source

Controlled van der Waals epitaxy of 2D single-crystal molecular film. [PDF]

Natl Sci Rev
Liu X, Lee YH.
europepmc   +1 more source

2D Cd metal contacts via low-temperature van der Waals epitaxy towards high-performance 2D transistors. [PDF]

Nat Commun
Yue M, Zhang K, Zhao M, Wang Y, Li D, Liang J, Zheng B, Zou C, Ye Y, Wang P, Zhang L, Wang S.   +11 more
europepmc   +1 more source

Ultrathin graphdiyne film on graphene through solution-phase van der Waals epitaxy. [PDF]

Sci Adv, 2018
Gao X, Zhu Y, Yi D, Zhou J, Zhang S, Yin C, Ding F, Zhang S, Yi X, Wang J, Tong L, Han Y, Liu Z, Zhang J.   +13 more
europepmc   +1 more source

Van der Waals epitaxy

Oyo Buturi, 1993
openaire   +1 more source