Results 101 to 110 of about 1,875 (185)

Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer. [PDF]

Sci Adv, 2021
Ren F, Liu B, Chen Z, Yin Y, Sun J, Zhang S, Jiang B, Liu B, Liu Z, Wang J, Liang M, Yuan G, Yan J, Wei T, Yi X, Wang J, Zhang Y, Li J, Gao P, Gao P, Liu Z, Liu Z.   +21 more
europepmc   +1 more source

The Evolution of Semiconductor Devices: From Transistors to Quantum and Neuromorphic Computing

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 8, August 2026.
This review presents the evolution of semiconductor devices from BJTs to fin field‐effect transistors (FinFETs), nanowire, and carbon nanotube transistors. It highlights emerging materials, including SiC and GaN, and examines neuromorphic and quantum computing, industry applications, performance benchmarks, challenges, and future directions.
Manoharan Subramanian, Mahalakshmi Balan, Ananthi Kaliyamoorthy, Esakki Muthu Sankaran, Govindaraj Vellingiri, Gianluca Gatto, Amit Kumar   +6 more
wiley   +1 more source

Exploring Metal‐Organic Molecular Beam Epitaxy as an Alternative Pathway towards 2D Transition Metal Dichalcogenides WSe2 and WS2

Small Structures
A new approach for the growth of vertical 2D van‐der‐Waals heterostructures is reported: Using metal‐organic molecular beam epitaxy (MOMBE), aspects of chemical and physical vapor deposition are combined to grow ultrathin films of WX2 (X = Se, S) on ...
Adrian Schütze, Philip Schädlich, Thomas Seyller, Fabian Göhler   +3 more
doaj   +1 more source

Two‐step annealing process drives high thermoelectric performance of n‐type Bi2Te3 flexible films

Responsive Materials, Volume 4, Issue 3, August 2026.
To address the relatively low carrier mobility in n‐type Bi2Te3 films prepared by magnetron sputtering, we developed a two‐step annealing process, including in situ and post‐annealing heat treatment. This method yields a high mobility (132.54 cm2 V−1 s−1) and S2σ (14.5 μW cm−1 K−2) by promoting pronounced grain growth and strengthening the preferred ...
Liang‐Cao Yin, Xinhua Lu, Wei‐Di Liu, Ji‐Wei Hou, De‐Zhuang Wang, Siqi Liu, Hao Wu, Meng Li, Xiao‐Lei Shi, Wei‐Nan Xie, Zhi‐Gang Chen, Qingfeng Liu   +11 more
wiley   +1 more source

Toward Large-Scale Ga₂O₃ Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers. [PDF]

ACS Appl Mater Interfaces, 2021
Min JH, Li KH, Kim YH, Min JW, Kang CH, Kim KH, Lee JS, Lee KJ, Jeong SM, Lee DS, Bae SY, Ng TK, Ooi BS.   +12 more
europepmc   +1 more source

Van der Waals epitaxy in graphene heterostructures [PDF]

Graphene — a two-dimensional sheet of carbon atoms — has surged into recent interest with its host of remarkable properties and its ultimate thinness. However, graphene combined with other materials is starting to attract more attention. These heterostructures can be important for production routes, incorporating graphene into existing technologies, or
openaire  

Direct Growth of Wafer‐Scale Self‐Separated GaN on Reusable 2D Material Substrates

Advanced Science
Free‐standing gallium nitride has been prepared using various methods; however, the removal of the original substrate is still challenging with low success rates.
Chang‐Hsun Huang, Chia‐Yi Wu, Yi‐Chia Chou   +2 more
doaj   +1 more source

Mixed-dimensional InAs nanowire on layered molybdenum disulfide heterostructures via selective-area van der Waals epitaxy. [PDF]

Nanoscale Adv, 2021
Baboli MA, Abrand A, Burke RA, Fedorenko A, Wilhelm TS, Polly SJ, Dubey M, Hubbard SM, Mohseni PK.   +8 more
europepmc   +1 more source

Single‐Crystalline β‐Ga2O3 Homoepitaxy on a Near Van der Waals Surface of (100) Substrate

Advanced Science
Gallium oxide (Ga₂O₃) is a promising wide‐bandgap semiconductor for power devices, offering high breakdown voltage and low on‐resistance. Among its polymorphs, β‐Ga₂O₃ stands out due to the availability of high‐quality, large‐area single‐crystalline ...
Tong Jiang, Hao Wang, Huaze Zhu, Junwei Cao, Xiaoqing Huo, Zhiqing Yang, Junshuai Li, Yaqing Ma, Shengnan Zhang, Xiang Xu, Wei Kong   +10 more
doaj   +1 more source

Core–Shell WS2@WTe2/MoTe2 Nanotubes

Small Structures
WTe2 and MoTe2 are materials with a layered structure (2D materials) belonging to the transition metal dichalcogenide family of compounds. Their topological 1T′ polytype has not been fabricated and studied in a 1D nanotubular structure, so far.
Vojtech Kundrat, Lothar Houben, Jakub Zalesak, David Holec, Iddo Pinkas, Reshef Tenne   +5 more
doaj   +1 more source