Results 71 to 80 of about 1,850 (178)

Thin Fluoride Insulators for Improved 2D Transistors: From Deposition Methods to Recent Applications

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
2D materials hold significant promise for next‐generation electronic and optoelectronic devices, but suitable gate dielectrics are still a challenge. Fluoride insulators, offering inert, dangling‐bond‐free surfaces, have recently emerged as strong candidates. This review covers recent publications on high‐quality fluoride thin‐film deposition and their
Behzad Dadashnia, Saeed Rasouli, Walter M. Weber, Daniele Nazzari   +3 more
wiley   +1 more source

Stabilizing Phosphorene‐Like Group IV–VI Compounds via van der Waals Imprinting for Multistate Ferroelectricity and Tunable Spin Transport

Advanced Electronic Materials
Layered group IV–VI compounds (i.e., SnSe, SnS, GeSe, and GeS) in the puckered structure resembling black‐phosphorene (BlackP) have attracted increasing interest because of their intriguing ferroic orders and outstanding thermoelectric properties.
Muhammad Usman Muzaffar, Chuanbao Zhang, Shunhong Zhang, Ping Cui, Zhenyu Zhang   +4 more
doaj   +1 more source

Two‐step annealing process drives high thermoelectric performance of n‐type Bi2Te3 flexible films

Responsive Materials, EarlyView.
To address the relatively low carrier mobility in n‐type Bi2Te3 films prepared by magnetron sputtering, we developed a two‐step annealing process, including in situ and post‐annealing heat treatment. This method yields a high mobility (132.54 cm2 V−1 s−1) and S2σ (14.5 μW cm−1 K−2) by promoting pronounced grain growth and strengthening the preferred ...
Liang‐Cao Yin, Xinhua Lu, Wei‐Di Liu, Ji‐Wei Hou, De‐Zhuang Wang, Siqi Liu, Hao Wu, Meng Li, Xiao‐Lei Shi, Wei‐Nan Xie, Zhi‐Gang Chen, Qingfeng Liu   +11 more
wiley   +1 more source

Low Temperature Site‐Specific Pulsed Laser Annealing of MoS2

Small, EarlyView.
The application of laser pulses, of extremely short duration, is investigated as a potential new method to modify the atomic structure of ultrathin 2D materials for use in the creation of future electrical devices. The process is efficient, offering a site‐specific functionality, where regions of an electronic device that only requires annealing is ...
Nazar Farid, Aashi Gupta, Pavlina Metaxa, A Arifutzzaman, Hariprasad Kuduvan, Rahil Haria, Michele Conroy, Ian Campbell, Ageeth A Bol, James Connolly, Jun Lin, Ian Povey, Ray Duffy, Gerard M O'Connor   +13 more
wiley   +1 more source

Heterostructures based on inorganic and organic van der Waals systems

APL Materials, 2014
The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers.
Gwan-Hyoung Lee, Chul-Ho Lee, Arend M. van der Zande, Minyong Han, Xu Cui, Ghidewon Arefe, Colin Nuckolls, Tony F. Heinz, James Hone, Philip Kim   +9 more
doaj   +1 more source

Vibrational Exfoliation of 2D Materials

Small, EarlyView.
Vibrational energy folds, fractures and exfoliates atomically and molecularly thin materials. Combining experimentation and computational methods, this unique vibrational synthesis pathway is revealed. This process overcomes barriers of existing approaches by processing 1000 g/L dispersions without loss in yield.
Aadam Rabani, Faysal A. Khaleel, Fahad S. Al‐Gburi, Irwing Ramirez, Tomislav Friščić, Jason Stafford   +5 more
wiley   +1 more source

Van der Waals epitaxial growth of single-crystal molecular film

National Science Review
ABSTRACT Epitaxy is the cornerstone of semiconductor technology, enabling the fabrication of single-crystal film. Recent advancements in van der Waals (vdW) epitaxy have opened new avenues for producing wafer-scale single-crystal 2D atomic crystals. However, when it comes to molecular crystals, the overall weak vdW force means that it is
Lixin Liu, Penglai Gong, Kailang Liu, Bingrong Huang, Zhihao Zhang, Yingshuang Fu, Yu Wu, Yinghe Zhao, Meihui Wang, Yongshan Xu, Huiqiao Li, Tianyou Zhai   +11 more
openaire   +2 more sources

Strain–Engineered Method for Atomically Sharp Interfaces in 2D TMDC Lateral Heterostructures

Small Methods, EarlyView.
ABSTRACT While strain is widely used to tune the properties of two–dimensional transition–metal dichalcogenides (TMDCs), its role in controlling chalcogen exchange and alloy formation at interfaces of lateral heterostructures (LHSs) needs further exploration.
Mariam Hakami, Jui‐Cheng Kao, Vincent Tung, Takahito Takeda, Chun‐Wei Pao, Areej Aljarb   +5 more
wiley   +1 more source

High‐Resolution Laser‐Induced Forward Transfer of Graphene and Graphene/hBN Heterostructures Onto SiN Photodetector Patterns

physica status solidi (a), Volume 223, Issue 13, 8 July 2026.
Laser‐Induced Forward Transfer enables the maskless, high‐resolution integration of graphene and graphene/hBN pixels onto SiN photodetector architectures. Optimized laser processing preserves graphene quality while allowing transfer down to the 15 μm scale and across complex topographies, establishing a selective, mask‐free route toward straightforward
Katerina Magoula, Filimon Zacharatos, Amaia Zurutuza, Alba Centeno, Tarusisko Hirvenoja, Antti Brunström, Olli‐Pekka Kilpi, Ioanna Zergioti   +7 more
wiley   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, Volume 12, Issue 13, 6 July 2026.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source