Results 61 to 70 of about 1,850 (178)

Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition

APL Materials, 2017
An attempt to deposit a high quality epitaxial thin film of a two-dimensionally bonded (layered) chalcogenide material with van-der-Waals (vdW) epitaxy is of strong interest for non-volatile memory application.
Isom Hilmi, Andriy Lotnyk, Jürgen W. Gerlach, Philipp Schumacher, Bernd Rauschenbach   +4 more
doaj   +1 more source

Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials

, 2023
18 pages, 13 figures and Supplemental ...
Guillet, Quentin, Vojacek, Libor, Dosenovic, Djordje, Ibrahim, Fatima, Boukari, Herve, Li, Jing, Choueikani, Fadi, Ohresser, Philippe, Ouerghi, Abdelkarim, Mesple, Florie, Renard, Vincent, Jacquot, Jean-Francois, Jalabert, Denis, Okuno, Hanako, Chshiev, Mairbek, Vergnaud, Celine, Bonell, Frederic, Marty, Alain, Jamet, Matthieu   +18 more
openaire   +3 more sources

Gas–Solid Interface‐Assisted Growth of Organic Semiconductor Single Crystals: Dimensions, Structures, Mechanisms, and Applications

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Gas–solid interface‐assisted growth strategies have unlocked precise control over crystal structure, morphology, dimension, and molecular packing. The obtained organic semiconductor single crystals represent the ideal candidates for high‐performance organic optoelectronic devices.
Tingyi Yan, Qing Tian, Jinwen Wang, Ke Jiang, Yage Han, Yuanzhuang Ren, Lingyun Li, Xiujuan Zhang, Jiansheng Jie   +8 more
wiley   +1 more source

Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

APL Materials, 2017
Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of
Stefano Cecchi, Eugenio Zallo, Jamo Momand, Ruining Wang, Bart J. Kooi, Marcel A. Verheijen, Raffaella Calarco   +6 more
doaj   +1 more source

Direct Growth of van der Waals Tin Diiodide Monolayers

Advanced Science, 2021
Two‐dimensional (2D) van der Waals (vdW) materials have garnered considerable attention for their unique properties and potentials in a wide range of fields, which include nano‐electronics/optoelectronics, solar energy, and catalysis.
Qian‐Qian Yuan, Fawei Zheng, Zhi‐Qiang Shi, Qi‐Yuan Li, Yang‐Yang Lv, Yanbin Chen, Ping Zhang, Shao‐Chun Li   +7 more
doaj   +1 more source

Borophene‐based sensing platforms: Pioneering ultrasensitive detection

FlexMat, EarlyView.
Schematic Diagram of Performance Optimization Strategies and Sensing Application Characteristics of Two‐Dimensional Boron‐Based Materials in Novel Sensors. Abstract Borophene is an emerging two‐dimensional (2D) material. Since significant breakthroughs were achieved in the experimental synthesis of borophene, the exploration and development of ...
Chi Yuan, Yanpeng Ji, Yi Liu, Guoan Tai
wiley   +1 more source

Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS₂ Layers by Plasma-Assisted Molecular Beam Epitaxy

Nanomaterials
The van der Waals epitaxy of wafer-scale GaN on 2D MoS2 and the integration of GaN/MoS2 heterostructures were investigated in this report. GaN films have been successfully grown on 2D MoS2 layers using three different Ga fluxes via a plasma-assisted ...
Iwan Susanto, Hong-Shan Liu, Yen-Ten Ho, Ing-Song Yu   +3 more
doaj   +1 more source

Two‐Dimensional Layered Oxides and the Two‐Dimensionalization of Bulk Oxides for Post‐Moore Information Devices

Information &Functional Materials, EarlyView.
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou, Yanchang Zhou, Yushan Zhu, Xiao Zhang, Ruiqing Cheng, Jun He   +5 more
wiley   +1 more source

Advances in Gate Dielectrics for 2D Electronics

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung, Jiwoo Kim, Gwan‐Hyoung Lee   +2 more
wiley   +1 more source

Growth of Hg_0.7Cd_0.3Te on Van Der Waals Mica Substrates via Molecular Beam Epitaxy

Molecules
In this paper, we present a study on the direct growth of Hg0.7Cd0.3Te thin films on layered transparent van der Waals mica (001) substrates through weak interface interaction through molecular beam epitaxy. The preferred orientation for growing Hg0.7Cd0.
Shuo Ma, Wenwu Pan, Xiao Sun, Zekai Zhang, Renjie Gu, Lorenzo Faraone, Wen Lei   +6 more
doaj   +1 more source