Results 61 to 70 of about 1,875 (185)

Thickness‐Tuned Berry Curvature in vdW Epitaxial Cr3Te4 Ultrathin Films

Advanced Electronic Materials, EarlyView.
An investigation of thickness‐modulated Berry curvature in stoichiometric, high‐quality van der Waals epitaxial Cr3Te4 films. Surface and interface Te(CrTe2)‐termination enables Fermi level shifting via thickness variation, modulating Berry curvature near the band crossing point, thereby establishing termination engineering (may called Terminonics) as ...
Minghui Gu, Guangyao Miao, Xiaoran Liu, Weihua Wang, Dongdong Xiao, Meng Meng, Jiandong Guo   +6 more
wiley   +1 more source

Combinatorial Survey of Structural Phase Distribution and Magnetism in Fe‐Ge‐Te Composition‐Spread Thin Film Libraries

Advanced Electronic Materials, EarlyView.
ABSTRACT Magnetic 2‐dimensional (2D) van der Waals (vdW) materials have garnered tremendous attention. The vdW ferromagnet Fe5Ge1Te2 has a Curie temperature Tc of ≈ 270 K, which is tailorable by tuning the stoichiometry and the Fe deficiency to reach room temperature.
Chih‐Yu Lee, Takahiro Yamazaki, Peng Yan, Ryan Kim, Masato Kotsugi, Efrain E. Rodriguez, Joseph W. Bennett, Ichiro Takeuchi   +7 more
wiley   +1 more source

Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials

, 2023
18 pages, 13 figures and Supplemental ...
Guillet, Quentin, Vojacek, Libor, Dosenovic, Djordje, Ibrahim, Fatima, Boukari, Herve, Li, Jing, Choueikani, Fadi, Ohresser, Philippe, Ouerghi, Abdelkarim, Mesple, Florie, Renard, Vincent, Jacquot, Jean-Francois, Jalabert, Denis, Okuno, Hanako, Chshiev, Mairbek, Vergnaud, Celine, Bonell, Frederic, Marty, Alain, Jamet, Matthieu   +18 more
openaire   +3 more sources

Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition

APL Materials, 2017
An attempt to deposit a high quality epitaxial thin film of a two-dimensionally bonded (layered) chalcogenide material with van-der-Waals (vdW) epitaxy is of strong interest for non-volatile memory application.
Isom Hilmi, Andriy Lotnyk, Jürgen W. Gerlach, Philipp Schumacher, Bernd Rauschenbach   +4 more
doaj   +1 more source

Atomically constructing a van der Waals heterostructure of CrTe2/Bi2Te3 by molecular beam epitaxy

Materials Futures, 2023
A 2D heterostructure with proximity coupling of magnetism and topology can provide enthralling prospects for hosting new quantum states and exotic properties that are relevant to next-generation spintronic devices.
Jin-Hua Nie, Rui Li, Mao-Peng Miao, Ying-Shuang Fu, Wenhao Zhang   +4 more
doaj   +1 more source

Two‐Dimensional Materials for Flexible Neuromorphic Devices: Materials, Engineering Strategies, Architectures, and Emerging Applications

Advanced Electronic Materials, EarlyView.
This review explains how atomically thin materials can combine information storage, processing, and mechanical flexibility in neuromorphic devices. It connects material properties and engineering strategies with device architecture, synaptic behavior, and performance under bending.
Junzhe Tang, Letian Dai
wiley   +1 more source

Epitaxial Growth of GaN Films on Chemical-Vapor-Deposited 2D MoS₂ Layers by Plasma-Assisted Molecular Beam Epitaxy

Nanomaterials
The van der Waals epitaxy of wafer-scale GaN on 2D MoS2 and the integration of GaN/MoS2 heterostructures were investigated in this report. GaN films have been successfully grown on 2D MoS2 layers using three different Ga fluxes via a plasma-assisted ...
Iwan Susanto, Hong-Shan Liu, Yen-Ten Ho, Ing-Song Yu   +3 more
doaj   +1 more source

Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

APL Materials, 2017
Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of
Stefano Cecchi, Eugenio Zallo, Jamo Momand, Ruining Wang, Bart J. Kooi, Marcel A. Verheijen, Raffaella Calarco   +6 more
doaj   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Gas–Solid Interface‐Assisted Growth of Organic Semiconductor Single Crystals: Dimensions, Structures, Mechanisms, and Applications

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Gas–solid interface‐assisted growth strategies have unlocked precise control over crystal structure, morphology, dimension, and molecular packing. The obtained organic semiconductor single crystals represent the ideal candidates for high‐performance organic optoelectronic devices.
Tingyi Yan, Qing Tian, Jinwen Wang, Ke Jiang, Yage Han, Yuanzhuang Ren, Lingyun Li, Xiujuan Zhang, Jiansheng Jie   +8 more
wiley   +1 more source