Results 41 to 50 of about 1,850 (178)

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Van der Waals Epitaxy of HgCdTe Thin Films for Flexible Infrared Optoelectronics

Advanced Materials Interfaces, 2023
Van der Waals epitaxial (vdW) growth of semiconductor thin films on 2D layered substrates has recently attracted considerable attention since it provides a potential pathway for realizing monolithically integrated devices and flexible devices.
Wenwu Pan, Zekai Zhang, Renjie Gu, Shuo Ma, Lorenzo Faraone, Wen Lei   +5 more
doaj   +1 more source

Amalgamation of high-κ dielectrics with graphene: A catalyst in the orbit of nanoelectronics and material sciences

Frontiers in Physics, 2022
In electronics, the size of transistors has been reduced to a few nanometers. Electronic devices’ accuracy and authenticity face a major problem of leakage current.
Sadhak Khanna, Sadhak Khanna, Sadhak Khanna   +2 more
doaj   +1 more source

Ferromagnetism of Molecular Beam Epitaxy‐grown Ultra‐thin Cr2Ge2Te6 Films Down to the Monolayer Limit on Si Substrates

Advanced Materials, EarlyView.
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji, Ruixuan Liu, Tianchen Zhu, Yang Chen, Yitian Tong, Jinxuan Liang, Yunhe Bai, Yunyi Zang, Zuhan Geng, Fangting Chen, Xiyu Hong, Jiatong Zhang, Luyi Yang, Qi‐Kun Xue, Ke He, Xiao Feng   +15 more
wiley   +1 more source

Giant Orbital Rashba–Edelstein Effect in Crystalline Cu2O/Cu Heterostructures

Advanced Materials, EarlyView.
An enhanced orbital Rashba–Edelstein effect is demonstrated in a crystalline Cu2O/Cu heterostructure, compared to naturally oxidized CuOx structures, highlighting the critical role of crystallinity and interface control in orbital torque generation. The resulting spin torque conductivity exceeds that of Pt, indicating the potential of orbital torque ...
San Ko, Jaimin Kang, Su Jae Kim, Hanhwi Jang, Do‐Kyeong Nam, Minseok Kang, Sunghoon Kim, Yeon Sik Jung, Se‐Young Jeong, Kab‐Jin Kim, Byong‐Guk Park   +10 more
wiley   +1 more source

The Van der Waals epitaxial growth of GaSe on Si(111) [PDF]

Journal of Applied Physics, 1997
GaSe, a layered semiconductor, may be grown on the Si(111) surface by molecular beam epitaxy. The crystalline quality is relatively good, in the sense that the MeV4He ion minimum channeling yield (~30%) is as low as that of state-of-the-art bulk material, and the interface is atomically abrupt.
Nicolet, Marc-A., author, Song, J. G., author, Vantomme, André, author, Mahan, John E., author, Eddrief, M., author, Le Thanh, Vinh, author, American Institute of Physics, publisher   +6 more
openaire   +3 more sources

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Van der Waals Chromium Telluride Thin Films Prepared by Hybrid Pulsed Laser Deposition With Tunable Magnetism

Advanced Materials Interfaces, EarlyView.
Epitaxial Cr(1+δ)Te2 thin films were synthesized via hybrid Pulsed Laser Deposition (PLD) that combined Molecular Beam Epitaxy (MBE) techniques with PLD. Control of the Cr intercalation, δ, enabled modulation of magnetic anisotropy, Curie temperature, and transport properties.
Pia Henning, Anna Tschesche, Tobias Meyer, Jasnamol Palakkal   +3 more
wiley   +1 more source

Xenes for Sustainable Energy: A Roadmap From First‐Principles Design to Practical Deployment

Advanced Materials Interfaces, EarlyView.
Emerging 2D Xenes are advancing from theoretical predictions toward practical energy‐storage and conversion technologies through the integration of first‐principles modelling, experimental synthesis, electrochemical validation, and AI‐assisted materials design, enabling accelerated discovery of high‐performance and sustainable electrochemical systems ...
Onur Karaman, Ceren Karaman
wiley   +1 more source

Symmetry‐Driven Unconventional Magnetoelectric Coupling in Perovskite Altermagnets: From Bulk to the Two‐Dimensional Limit

Advanced Science, EarlyView.
The symmetry‐driven coexistence of altermagnetism and (anti)ferroelectricity in perovskites shows a strong dimensional dependence. Upon reducing the system from bulk to the two‐dimensional limit, only C‐type antiferromagnetic order retains ferroelectrically switchable altermagnetism, whereas A‐ and G‐type orders become conventional antiferromagnets ...
Zhou Cui, Ziye Zhu, Xunkai Duan, Bowen Hao, Xianzhang Chen, Jiayong Zhang, Tong Zhou   +6 more
wiley   +1 more source