Results 41 to 50 of about 1,875 (185)

Atomic‐Scale Observation of the Local Structure and 1D Quantum Effects in vdW Stacking Mo6Te6 Nanowires

Advanced Materials Interfaces, 2023
The sub‐nanometer‐diameter transitional‐metal chalcogenides (M6X6) molecular wires are ideal 1D quantum systems. The electronic properties of such system are very sensitive to the interface interaction and local imperfection.
Yuang Li, Di Wu, Dongli Wang, Yinuo Zhang, Tai Min, Yi Pan   +5 more
doaj   +1 more source

Imaging the Thickness‐Dependent Formation of Schottky Barriers in Metal–Semiconductor van der Waals Heterostructures

Advanced Functional Materials, EarlyView.
Using nanobeam photoemission, we demonstrate imaging of the in‐plane and out‐of‐plane electric field landscape within a metal–semiconductor van der Waals heterostructure. We provide evidence for Schottky barrier formation that depends on the semiconductor thickness. ABSTRACT Achieving high‐performance optoelectronic devices based on two‐dimensional van
Dario Mastrippolito, Mariarosa Cavallo, Marco Paye, Clement Gureghian, Albin Colle, Jiho Roh, Dipak Maity, Clemence Villefroy, Erwan Dandeu, Herve Cruguel, Stephane Lorcy, Marie Hervé, James K. Utterback, Pavel Dudin, Johan Biscaras, José Avila, Emmanuel Lhuillier, Debora Pierucci   +17 more
wiley   +1 more source

Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Scientific Reports, 2020
Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer.
Soufiane Karrakchou, Suresh Sundaram, Taha Ayari, Adama Mballo, Phuong Vuong, Ashutosh Srivastava, Rajat Gujrati, Ali Ahaitouf, Gilles Patriarche, Thierry Leichlé, Simon Gautier, Tarik Moudakir, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden   +14 more
doaj   +1 more source

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Van der Waals Epitaxy of HgCdTe Thin Films for Flexible Infrared Optoelectronics

Advanced Materials Interfaces, 2023
Van der Waals epitaxial (vdW) growth of semiconductor thin films on 2D layered substrates has recently attracted considerable attention since it provides a potential pathway for realizing monolithically integrated devices and flexible devices.
Wenwu Pan, Zekai Zhang, Renjie Gu, Shuo Ma, Lorenzo Faraone, Wen Lei   +5 more
doaj   +1 more source

Amalgamation of high-κ dielectrics with graphene: A catalyst in the orbit of nanoelectronics and material sciences

Frontiers in Physics, 2022
In electronics, the size of transistors has been reduced to a few nanometers. Electronic devices’ accuracy and authenticity face a major problem of leakage current.
Sadhak Khanna, Sadhak Khanna, Sadhak Khanna   +2 more
doaj   +1 more source

Ferromagnetism of Molecular Beam Epitaxy‐grown Ultra‐thin Cr2Ge2Te6 Films Down to the Monolayer Limit on Si Substrates

Advanced Materials, EarlyView.
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji, Ruixuan Liu, Tianchen Zhu, Yang Chen, Yitian Tong, Jinxuan Liang, Yunhe Bai, Yunyi Zang, Zuhan Geng, Fangting Chen, Xiyu Hong, Jiatong Zhang, Luyi Yang, Qi‐Kun Xue, Ke He, Xiao Feng   +15 more
wiley   +1 more source

The Van der Waals epitaxial growth of GaSe on Si(111) [PDF]

Journal of Applied Physics, 1997
GaSe, a layered semiconductor, may be grown on the Si(111) surface by molecular beam epitaxy. The crystalline quality is relatively good, in the sense that the MeV4He ion minimum channeling yield (~30%) is as low as that of state-of-the-art bulk material, and the interface is atomically abrupt.
Nicolet, Marc-A., author, Song, J. G., author, Vantomme, André, author, Mahan, John E., author, Eddrief, M., author, Le Thanh, Vinh, author, American Institute of Physics, publisher   +6 more
openaire   +3 more sources

Giant Orbital Rashba–Edelstein Effect in Crystalline Cu2O/Cu Heterostructures

Advanced Materials, EarlyView.
An enhanced orbital Rashba–Edelstein effect is demonstrated in a crystalline Cu2O/Cu heterostructure, compared to naturally oxidized CuOx structures, highlighting the critical role of crystallinity and interface control in orbital torque generation. The resulting spin torque conductivity exceeds that of Pt, indicating the potential of orbital torque ...
San Ko, Jaimin Kang, Su Jae Kim, Hanhwi Jang, Do‐Kyeong Nam, Minseok Kang, Sunghoon Kim, Yeon Sik Jung, Se‐Young Jeong, Kab‐Jin Kim, Byong‐Guk Park   +10 more
wiley   +1 more source

Defect‐Templated Phase Engineering in Atomically Thin Metals

Advanced Materials, EarlyView.
Graphene defects are transformed from passive imperfections into programmable templates for phase‐selective growth of atomically thin silver. Plasma‐generated boundary defects favor Ag(1), whereas sp3‐rich zero‐layer graphene promotes Ag(2). This defect‐directed intercalation links local graphene chemistry to crystalline phase, electronic structure ...
Arpit Jain, Boyang Zheng, Sawani Datta, Kanchan Ulman, Jakob Henz, Matthew Wei‐Jun Liu, Van Dong Pham, Wen He, Chengye Dong, Li‐Syuan Lu, Alexander Vera, Nader Sawtarie, Wesley Auker, Ke Wang, Bob Hengstebeck, Zachary W. Henshaw, Shreya Mathela, Maxwell Wetherington, William H. Blades, Kenneth Knappenberger, Ursula Wurstbauer, Su Ying Quek, Ulrich Starke, Shengxi Huang, Vincent H. Crespi, Joshua A. Robinson   +25 more
wiley   +1 more source