Results 31 to 40 of about 1,850 (178)

Scalable van der Waals epitaxy of tunable moiré heterostructures

, 2022
The unique physics found in moiré superlattices of twisted or lattice-mismatched atomic layers hold great promise for future quantum technologies. However, twisted configurations are typically thermodynamically unfavorable, making the accurate twist angle control in direct growth implausible.
Fortin-Deschênes, Matthieu, Watanabe, Kenji, Taniguchi, Takashi, Xia, Fengnian   +3 more
openaire   +2 more sources

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene [PDF]

Nature Communications, 2014
There are numerous studies on the growth of planar films on sp(2)-bonded two-dimensional (2D) layered materials. However, it has been challenging to grow single-crystalline films on 2D materials due to the extremely low surface energy. Recently, buffer-assisted growth of crystalline films on 2D layered materials has been introduced, but the crystalline
Jeehwan, Kim, Can, Bayram, Hongsik, Park, Cheng-Wei, Cheng, Christos, Dimitrakopoulos, John A, Ott, Kathleen B, Reuter, Stephen W, Bedell, Devendra K, Sadana   +8 more
openaire   +2 more sources

Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys

Scientific Reports, 2017
The present work displays a route to design strain gradients at the interface between substrate and van der Waals bonded materials. The latter are expected to grow decoupled from the substrates and fully relaxed and thus, by definition, incompatible with
Eugenio Zallo, Stefano Cecchi, Jos E. Boschker, Antonio M. Mio, Fabrizio Arciprete, Stefania Privitera, Raffaella Calarco   +6 more
doaj   +1 more source

GaN-Based LEDs Grown on Graphene-Covered SiO₂/Si (100) Substrate

Crystals, 2020
The growth of nitride on large-size and low-cost amorphous substrates has attracted considerable attention for applications in large-scale optoelectronic devices.
Wurui Song, Fang Ren, Yunyu Wang, Yue Yin, Shuo Zhang, Bo Shi, Tao Feng, Jianwei Wang, Meng Liang, Yiyun Zhang, Tongbo Wei, Jianchang Yan, Junxi Wang, Jinmin Li, Xiaoyan Yi, Zhiqiang Liu   +15 more
doaj   +1 more source

Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS₂ Layer

Nanomaterials, 2021
Van der Waals epitaxial GaN thin films on c-sapphire substrates with a sp2-bonded two-dimensional (2D) MoS2 buffer layer, prepared by pulse laser deposition, were investigated. Low temperature plasma-assisted molecular beam epitaxy (MBE) was successfully
Iwan Susanto, Chi-Yu Tsai, Yen-Teng Ho, Ping-Yu Tsai, Ing-Song Yu   +4 more
doaj   +1 more source

Direct Growth of Antimonene on C-Plane Sapphire by Molecular Beam Epitaxy

Applied Sciences, 2020
Monolayer antimony (antimonene) has been reported for its excellent properties, such as tuneable band gap, stability in the air, and high mobility. However, growing high quality, especially large-area antimonene, remains challenging.
Minghui Gu, Chen Li, Yuanfeng Ding, Kedong Zhang, Shunji Xia, Yusheng Wang, Ming-Hui Lu, Hong Lu, Yan-Feng Chen   +8 more
doaj   +1 more source

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p–n junctions

Nature Communications, 2017
Growth of large area and defect-free two-dimensional semiconductor layers for high-performance p–n junction applications has been a great challenge. Yang et al.
Tiefeng Yang, Biyuan Zheng, Zhen Wang, Tao Xu, Chen Pan, Juan Zou, Xuehong Zhang, Zhaoyang Qi, Hongjun Liu, Yexin Feng, Weida Hu, Feng Miao, Litao Sun, Xiangfeng Duan, Anlian Pan   +14 more
doaj   +1 more source

On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal Dichalcogenides

ACS Applied Materials & Interfaces, 2020
Layered materials held together by weak van der Waals (vdW) interactions are a promising class of materials in the field of nanotechnology. Besides the potential for single layers, stacking of various vdW layers becomes even more promising since unique properties can hence be precisely engineered.
Mortelmans, Wouter, Mehta, Ankit Nalin, Balaji, Yashwanth, Sergeant, Stefanie, Meng, Ruishen, Houssa, Michel, De Gendt, Stefan, Heyns, Marc, Merckling, Clement   +8 more
openaire   +4 more sources

Atomic‐Scale Observation of the Local Structure and 1D Quantum Effects in vdW Stacking Mo6Te6 Nanowires

Advanced Materials Interfaces, 2023
The sub‐nanometer‐diameter transitional‐metal chalcogenides (M6X6) molecular wires are ideal 1D quantum systems. The electronic properties of such system are very sensitive to the interface interaction and local imperfection.
Yuang Li, Di Wu, Dongli Wang, Yinuo Zhang, Tai Min, Yi Pan   +5 more
doaj   +1 more source

Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates

Scientific Reports, 2020
Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by our group as an enabling solution for h-BN-based device transfer.
Soufiane Karrakchou, Suresh Sundaram, Taha Ayari, Adama Mballo, Phuong Vuong, Ashutosh Srivastava, Rajat Gujrati, Ali Ahaitouf, Gilles Patriarche, Thierry Leichlé, Simon Gautier, Tarik Moudakir, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden   +14 more
doaj   +1 more source