Results 11 to 20 of about 1,875 (185)

Coincident-site lattice matching during van der Waals epitaxy. [PDF]

Sci Rep, 2015
AbstractVan der Waals (vdW) epitaxy is an attractive method for the fabrication of vdW heterostructures. Here Sb2Te3films grown on three different kind of graphene substrates (monolayer epitaxial graphene, quasi freestanding bilayer graphene and the SiC (6√3 × 6√3)R30° buffer layer) are used to study the vdW epitaxy between two 2-dimensionally (2D ...
Boschker JE, Galves LA, Flissikowski T, Lopes JM, Riechert H, Calarco R.   +5 more
europepmc   +6 more sources

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂. [PDF]

Materials (Basel), 2018
Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials.
Yin Y, Ren F, Wang Y, Liu Z, Ao J, Liang M, Wei T, Yuan G, Ou H, Yan J, Yi X, Wang J, Li J.   +12 more
europepmc   +2 more sources

Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration [PDF]

Advanced Science
The realization of high quality (0001) GaN on Si(100) is paramount importance for the monolithic integration of Si‐based integrated circuits and GaN‐enabled optoelectronic devices. Nevertheless, thorny issues including large thermal mismatch and distinct
Dongdong Liang, Bei Jiang, Zhetong Liu, Zhaolong Chen, Yaqi Gao, Shenyuan Yang, Rui He, Lulu Wang, Junxue Ran, Junxi Wang, Peng Gao, Jinmin Li, Zhongfan Liu, Jingyu Sun, Tongbo Wei   +14 more
doaj   +2 more sources

Dative Epitaxy of Commensurate Monocrystalline Covalent van der Waals Moiré Supercrystal

Advanced Materials, 2022
AbstractRealizing van der Waals (vdW) epitaxy in the 1980s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a
Ting Yu, X M Cheng, Scott Crooker
exaly   +7 more sources

Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices

Advanced Science
Chalcogenide ferroelectric Rashba semiconductors (FERSCs) offer a promising route to ultralow‐power spin–orbit devices, yet their integration into microelectronics has been hindered by the lack of high‐quality films grown using industry‐compatible ...
Jules Lagrave, Nicolas Bernier, Thomas Jalabert, Yoann Brûlé, Damien Térébénec, Pierre Meilleur, Hervé Roussel, Jean‐Baptiste Dory, Oussama J. Mouawad, Thibault Chommaux, Cristian Mocuta, Dominique Thiaudière, Laurent Vila, Françoise Hippert, Pierre Noé   +14 more
doaj   +2 more sources

Visualizing Van der Waals Epitaxial Growth of 2D Heterostructures [PDF]

Advanced Materials, 2021
AbstractUnderstanding the growth mechanisms of 2D van der Waals (vdW) heterostructures is of great importance in exploring their functionalities and device applications. A custom‐built system integrating physical vapor deposition and optical microscopy/Raman spectroscopy is employed to study the dynamic growth processes of 2D vdW heterostructures in ...
Kenan Zhang, Changchun Ding, Baojun Pan, Zhen Wu, Austin Marga, Lijie Zhang, Hao Zeng, Shaoming Huang   +7 more
openaire   +2 more sources

Two-dimensional GaSe/MoSe 2 misfit bilayer heterojunctions by van der Waals epitaxy [PDF]

Science Advances, 2016
, Ming-Wei Lin, Xufan Li
exaly   +2 more sources

Microstructure control and property switching in stress-free van der Waals epitaxial VO2 films on mica

Materials & Design, 2023
Realizing stress-free inorganic epitaxial films on weakly bonding substrates is of importance for applications that require film transfer onto surfaces that do not seed epitaxy.
Erik Ekström, Simon Hurand, Arnaud le Febvrier, Anna Elsukova, Per O.Å. Persson, Biplab Paul, Fredrik Eriksson, Geetu Sharma, Oleksandr Voznyy, Davide G. Sangiovanni, Ganpati Ramanath, Per Eklund   +11 more
doaj   +1 more source

Unusual role of epilayer–substrate interactions in determining orientational relations in van der Waals epitaxy [PDF]

Proceedings of the National Academy of Sciences of the United States of America, 2014
Zhenyu Zhang, Peizhi Liu, Xuedong Bai
exaly   +2 more sources

Lattice modulation strategies for 2D material assisted epitaxial growth

Nano Convergence, 2023
As an emerging single crystals growth technique, the 2D-material-assisted epitaxy shows excellent advantages in flexible and transferable structure fabrication, dissimilar materials integration, and matter assembly, which offers opportunities for novel ...
Qi Chen, Kailai Yang, Meng Liang, Junjie Kang, Xiaoyan Yi, Junxi Wang, Jinmin Li, Zhiqiang Liu   +7 more
doaj   +1 more source