Results 11 to 20 of about 1,850 (178)

Coincident-site lattice matching during van der Waals epitaxy. [PDF]

Sci Rep, 2015
AbstractVan der Waals (vdW) epitaxy is an attractive method for the fabrication of vdW heterostructures. Here Sb2Te3films grown on three different kind of graphene substrates (monolayer epitaxial graphene, quasi freestanding bilayer graphene and the SiC (6√3 × 6√3)R30° buffer layer) are used to study the vdW epitaxy between two 2-dimensionally (2D ...
Boschker JE, Galves LA, Flissikowski T, Lopes JM, Riechert H, Calarco R.   +5 more
europepmc   +6 more sources

Dative Epitaxy of Commensurate Monocrystalline Covalent van der Waals Moiré Supercrystal

Advanced Materials, 2022
AbstractRealizing van der Waals (vdW) epitaxy in the 1980s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a
Xiao Wang, Lishu Wu, Austin Marga
exaly   +7 more sources

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂. [PDF]

Materials (Basel), 2018
Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagonal materials.
Yin Y, Ren F, Wang Y, Liu Z, Ao J, Liang M, Wei T, Yuan G, Ou H, Yan J, Yi X, Wang J, Li J.   +12 more
europepmc   +2 more sources

Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration [PDF]

Advanced Science
The realization of high quality (0001) GaN on Si(100) is paramount importance for the monolithic integration of Si‐based integrated circuits and GaN‐enabled optoelectronic devices. Nevertheless, thorny issues including large thermal mismatch and distinct
Dongdong Liang, Bei Jiang, Zhetong Liu, Zhaolong Chen, Yaqi Gao, Shenyuan Yang, Rui He, Lulu Wang, Junxue Ran, Junxi Wang, Peng Gao, Jinmin Li, Zhongfan Liu, Jingyu Sun, Tongbo Wei   +14 more
doaj   +2 more sources

Visualizing Van der Waals Epitaxial Growth of 2D Heterostructures [PDF]

Advanced Materials, 2021
AbstractUnderstanding the growth mechanisms of 2D van der Waals (vdW) heterostructures is of great importance in exploring their functionalities and device applications. A custom‐built system integrating physical vapor deposition and optical microscopy/Raman spectroscopy is employed to study the dynamic growth processes of 2D vdW heterostructures in ...
Kenan Zhang, Changchun Ding, Baojun Pan, Zhen Wu, Austin Marga, Lijie Zhang, Hao Zeng, Shaoming Huang   +7 more
openaire   +2 more sources

Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy. [PDF]

Sci Adv, 2016
Li X, Lin MW, Lin J, Huang B, Puretzky AA, Ma C, Wang K, Zhou W, Pantelides ST, Chi M, Kravchenko I, Fowlkes J, Rouleau CM, Geohegan DB, Xiao K.   +14 more
europepmc   +2 more sources

Microstructure control and property switching in stress-free van der Waals epitaxial VO2 films on mica

Materials & Design, 2023
Realizing stress-free inorganic epitaxial films on weakly bonding substrates is of importance for applications that require film transfer onto surfaces that do not seed epitaxy.
Erik Ekström, Simon Hurand, Arnaud le Febvrier, Anna Elsukova, Per O.Å. Persson, Biplab Paul, Fredrik Eriksson, Geetu Sharma, Oleksandr Voznyy, Davide G. Sangiovanni, Ganpati Ramanath, Per Eklund   +11 more
doaj   +1 more source

Lattice modulation strategies for 2D material assisted epitaxial growth

Nano Convergence, 2023
As an emerging single crystals growth technique, the 2D-material-assisted epitaxy shows excellent advantages in flexible and transferable structure fabrication, dissimilar materials integration, and matter assembly, which offers opportunities for novel ...
Qi Chen, Kailai Yang, Meng Liang, Junjie Kang, Xiaoyan Yi, Junxi Wang, Jinmin Li, Zhiqiang Liu   +7 more
doaj   +1 more source

Orientational Epitaxy of van der Waals Molecular Heterostructures [PDF]

Nano Letters, 2018
The shape of individual building blocks is an important parameter in bottom-up self-assembly of nanostructured materials. A simple shape change from sphere to spheroid can significantly affect the assembly process due to the modification to the orientational degrees of freedom.
Lu’an Guo, Yitao Wang, Dogan Kaya, Richard E Palmer, Guangde Chen, Quanmin Guo   +5 more
openaire   +4 more sources

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates

Nanomaterials, 2022
The remote epitaxy of GaN epilayers on GaN/sapphire templates was studied by using different graphene interlayer types. Monolayer, bilayer, double-stack of monolayer, and triple-stack of monolayer graphenes were transferred onto GaN/sapphire templates ...
Kazimieras Badokas, Arūnas Kadys, Dominykas Augulis, Jūras Mickevičius, Ilja Ignatjev, Martynas Skapas, Benjaminas Šebeka, Giedrius Juška, Tadas Malinauskas   +8 more
doaj   +1 more source