Results 71 to 80 of about 6,513 (222)

Scaling properties of lithographic VCSELs

, 2011
Data are presented demonstrating lithographic vertical-cavity surface-emitting lasers (VCSELs) and their scaling properties. Lithographic VCSELs have simultaneous mode- and current-confinement defined only by lithography and epitaxial crystal growth. The
Liu, Xiaohang, Deppe, Dennis G., Guowei Zhao, Freisem, Sabine, Demir, Abdullah, Sabine Freisem, Xiaohang Liu, Abdullah Demir, Dennis G. Deppe, Zhao, Guowei   +9 more
core   +1 more source

1380 nm VCSELs using surface-activated bonding of GaAs-based DBRs on a Ge substrate

Applied Physics Express
A wafer-bonded vertical-cavity surface-emitting laser (VCSEL) was demonstrated by surface-activated bonding (SAB) of a GaAs-based distributed Bragg reflector (DBR) on a Ge substrate.
Tomomasa Watanabe, Mikihiro Yokozeki, Masashi Takanohashi, Michinori Shiomi, Hiroshi Nakajima, Masayuki Tanaka, Daiji Kasahara, Noriko Kobayashi, Noriyuki Futagawa   +8 more
doaj   +1 more source

Advances and Applications of Narrow-Linewidth Vertical-Cavity Surface-Emitting Lasers

Photonics
Vertical-cavity surface-emitting lasers (VCSELs) have emerged as essential light sources for atomic-precision measurement, quantum-secure communication, high-speed optical transmission, and laser coherent scanning detection, owing to their low power ...
Xiaoru Li, Ning Cui, Baolu Guan
doaj   +1 more source

Recent Developments in Deep‐Ultraviolet Flat Optics

Nanophotonics, Volume 15, Issue 10, 27 May 2026.
Deep‐ultraviolet flat optics (DUVFO) is emerging as a key platform for next‐generation photonics, enabling advanced functionalities beyond conventional DUV optics. This review outlines materials, devices, and system advances, highlighting wide‐bandgap platforms, while identifying key challenges in dispersion control, characterization, and wafer‐scale ...
Omar A. M. Abdelraouf, Tao Wang, Zeng Wang   +2 more
wiley   +1 more source

Study of Ga-Polar and N-Polar GaN-Based Green VCSELs by Simulation

IEEE Photonics Journal
Gallium Nitride (GaN)-based vertical-cavity surface-emitting lasers (VCSELs) in green spectral region face the difficulty of the “green gap”.
Ya-Chao Wang, Yan-Hui Chen, Zhong-Ming Zheng, Tao Yang, Yang Mei, Lei-Ying Ying, Bao-Ping Zhang   +6 more
doaj   +1 more source

Meniscus Pixel Printing for Contact‐Lens Vision Sensing and Robotic Control

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
A visual‐sensing contact lens is enabled by meniscus pixel printing (MPP), which rapidly patterns a 200 µm perovskite photodetector pixel in 1 s without masks, vacuum processing, or bulky equipment. A deep‐learning‐based super‐resolution reconstructs sparse on‐lens signals into 80 × 80 high‐resolution visual information, while AI‐driven eye‐tracking ...
Byung‐Hoon Gong, Dohyean Kim, Jiyun Jeong, Taekyeong Kim, Soon‐sung Kwon, Junyoung Seo, Il Jeon, Im Doo Jung   +7 more
wiley   +1 more source

Surface Passivation of HgTe Nanocrystals Enabling EG/2 Open‐Circuit Voltage and Their Coupling to Dielectric Cavity for Narrow Detection

Advanced Materials, Volume 38, Issue 26, 8 May 2026.
This article explores how the integration of a thin shell, combined with optimized surface chemistry, enables the design of photodiodes based on short‐wave infrared HgTe nanocrystals. These photodiodes achieve an open‐circuit voltage greater than half the optical bandgap, which drastically reduces dark current. The article also explores the integration
Albin Colle, Clement Gureghian, Dario Mastrippolito, Mariarosa Cavallo, Jiho Roh, Marco Paye, Tommaso Gemo, Diogo Almeida, Adrien Khalili, Yoann Prado, Xavier Lafosse, Sandrine Ithurria, Mathieu G. Silly, Pavel Dudin, James K. Utterback, José Avila, Debora Pierucci, Emmanuel Lhuillier   +17 more
wiley   +1 more source

Inverted n–p junction 940‐nm vertical‐cavity surface‐emitting laser arrays consisting of 875 devices on p‐GaAs substrate

Electronics Letters
The authors demonstrate a large‐area vertical‐cavity surface‐emitting laser (VCSEL) 25 × 35 array on a p‐type GaAs substrate with an emission wavelength of ∼940 nm and optical output power > 1 W, using an inverted junction (n‐up) epitaxial structure for ...
Yong Gyeong Lee, Sara Pouladi, Nam‐In Kim, Mina Moradnia, Jaekyun Kim, Keon Hwa Lee, Jae‐Hyun Ryou   +6 more
doaj   +1 more source

Influence of Anisotropies on Transverse Modes in Oxide-Confined VCSELs

, 2002
We present a comprehensive fully vectorial model for the cavity eigenmodes of oxide-cofined vertical-cavity surface -emitting lasers (VCSELs) with the details of their complex structure.
Oxide-confined Vcsels, Pierluigi Debernardi, Ingo Fischer, Christian Degen, Wolfgang Elsäßer, Senior Member, Gian Paolo Bava   +6 more
core  

Thermal performance of oxide-free lithographic VCSELs

, 2011
Oxide-free lithographic vertical-cavity surface-emitting lasers (VCSELs) are characterized for their thermal properties. VCSELs with minimum threshold temperatures \u3c 20°C demonstrate lasing at heat sink temperatures ≥ 190°C, with high rollover cavity ...
Deppe, D. G., G. Zhao, D.G. Deppe, Zhao, G.   +3 more
core   +1 more source