Results 201 to 210 of about 3,159 (260)

Topological radiation from vortex masers. [PDF]

Nat Commun
Qin H, Xiang R, Jafargholi A, Zhang Z, Fleury R.   +4 more
europepmc   +1 more source

FDTD-based design of high quality factor quantum dot photonic crystal nanolaser for next-generation nanotechnologies. [PDF]

Sci Rep
Farmani A, Omidniaee A.
europepmc   +1 more source

A Defect-Free Vertical-Cavity GaAs-Based Nanowire Laser on Silicon Emitting at the Telecom O-Band. [PDF]

Nano Lett
Doganlar C, Schmiedeke P, Döblinger M, Zöllner J, Haubmann B, Reitberger S, Müller-Caspary K, Finley JJ, Koblmüller G.   +8 more
europepmc   +1 more source

Non-macrocyclic molecular design enables cavity-adaptive cocrystals with high elasticity and low-threshold lasing. [PDF]

Nat Commun
Feng Z, Zhu Y, Han C, Ni H, Zhang L, Wei C, Chen X, Meng Z, Zhao Y, Lei Y.   +9 more
europepmc   +1 more source

Emerging Device Applications From Strong Light-Matter Interactions in 2D Materials. [PDF]

Adv Sci (Weinh)
Archana K J, Shwetabh K, Ali R, Velayutham R, Das K, Mondal A, Kumar P, Anantharaman SB.   +7 more
europepmc   +1 more source

On-chip, inverse-designed active wavelength division multiplexer at THz frequencies. [PDF]

Nat Commun
Digiorgio V, Senica U, Micheletti P, Beck M, Faist J, Scalari G.   +5 more
europepmc   +1 more source

Some of the next articles are maybe not open access.

Related searches:

Vertical-Cavity Surface-Emitting Laser (VCSEL)

Proceedings of the IEEE, 2013
The vertical-cavity surface-emitting laser (VCSEL) is becoming a key device in high-speed optical local area networks (LANs) and even wide-area networks (WANs). This device is also enabling ultraparallel data transfer in equipment and computer systems, including storage area networks (SANs) and wide optoelectronics fields. In this paper, we will review
Kenichi Iga
exaly   +2 more sources

Photopumped infrared vertical-cavity surface-emitting laser

Applied Physics Letters, 1996
The feasibility of a photopumped infrared vertical-cavity surface-emitting laser (VCSEL) based on CdHgTe alloys is demonstrated. The structure of the VCSEL consists of a 16.5-period Cd0.4Hg0.6Te/Cd0.75Hg0.25Te bottom Bragg reflector and a 3λ/4 thick Cd0.75Hg0.25Te cavity, containing a 100-nm-thick well, grown by molecular beam epitaxy.
Hadji, Emmanuel, Bleuse, J., Magnea, N., Pautrat, J.   +3 more
openaire   +2 more sources

Reflection noise in vertical cavity surface emitting lasers

51st Annual Device Research Conference, 1993
We describe the effect of back reflections on the relaxation-oscillation peaks of low threshold (<6 mA), high intrinsic bandwidth (31 GHz) vertical cavity surface emitting lasers. With the largest feedback possible with our experimental arrangement, x=−5.8 dB, the relaxation-oscillation peak breaks up into a series of sharp resonances with the ...
J. W. Bae, H. Temkin, S. E. Swirhun, W. E. Quinn, P. Brusenbach, C. Parsons, M. Kim, T. Uchida   +7 more
openaire   +1 more source