Results 11 to 20 of about 4,807,933 (188)

Growth and characterization of detector-grade CdMnTe by the vertical Bridgman technique

AIP Advances, 2018
We grew Cd1-xMnxTe crystals with a nominal Mn concentration of 5% by the vertical Bridgman growth technique. The compositional variation along the length of the grown ingot was studied by powder X-ray diffraction.
U. N. Roy, O. K. Okobiah, G. S. Camarda, Y. Cui, R. Gul, A. Hossain, G. Yang, S. U. Egarievwe, R. B. James   +8 more
doaj   +3 more sources

Modeling of dynamics of big size ZnGeP2 crystal growth by vertical Bridgman technique [PDF]

Bulletin of the Polish Academy of Sciences: Technical Sciences, 2018
The results of a modelling of big size single crystal ZnGeP2 growth dynamics in the multi-zone thermal installation based on the vertical variant of the Bridgman technique are given.
M. Philippov, Y. Babushkin, S. Efimov, S. Zamyatin, V. Rudnicki, A. Trofimov, A. Gribenyukov   +6 more
doaj   +4 more sources

Charge transport properties in CZT detectors grown by the vertical bridgman technique [PDF]

IEEE Nuclear Science Symposuim & Medical Imaging Conference, 2010
Great efforts are being presently devoted to the development of CdTe and CdZnTe detectors for a large variety of applications, such as medical, industrial, and space research. We present the spectroscopic properties of some CZT crystals grown by the standard vertical Bridgman method and by the boron oxide encapsulated vertical Bridgman method, which ...
Auricchio, N, Marchini, L, Caroli, E, Stephen, J. B, Zanichelli, M, Zappettini, A, ABBENE, Leonardo, Del Sordo, S.   +7 more
core   +8 more sources

A uniformity investigation of undoped, semi-insulating GaAs grown by the vertical Bridgman technique

Semiconductor Science and Technology, 1992
The authors have carried out a uniformity investigation of undoped, semi-insulating GaAs grown by the vertical Bridgman method. They have employed A/B etching, EL2 mapping and near-bandgap absorption (reverse contrast, RC) mapping to reveal dislocations and non-uniformities in concentrations of two specific point defects: neutral EL2 centres and ...
STIRLAND, DJ, BREIVIK, L, TÜZEMEN, Sebahattin, BROZEL, MR   +3 more
openaire   +3 more sources

Effect of Er dopant in GaSb bulk crystals grown by vertical Bridgman technique [PDF]

Journal of Crystal Growth, 1999
The distribution of Er in bulk GaSb ingots grown by vertical Bridgman technique has been investigated for different concentrations. The resistivity, mobility and carrier density were analysed. The formation of Er-Sb compounds and the incorporation of Er at subgrain boundaries has been shown by cathodoluminescence studies.
Plaza, J. L., Hidalgo Alcalde, Pedro, Méndez Martín, María Bianchi, Piqueras De Noriega, Francisco Javier, Castaño, J. L., Dieguez, E.   +5 more
openaire   +4 more sources

Growth and Characterization of Stoichiometric Cu₂ZnSnS₄ Crystal Using Vertical Bridgman Technique

physica status solidi (a), 2021
Stoichiometric Cu2ZnSnS4 (CZTS) single phase crystals are successfully grown in a single‐zone vertical furnace by Bridgman technique. X‐ray diffraction (XRD) and Raman spectroscopy measurements are employed to investigate the structural properties of the grown crystals, which verifies the formation of mono‐phase CZTS crystals with kesterite structure ...
Elif Peksu, Makbule Terlemezoglu, Mehmet Parlak, Hakan Karaagac   +3 more
openaire   +4 more sources

Studies on the growth and characterization of benzimidazole single crystals—vertical Bridgman technique

Journal of Crystal Growth, 2006
Abstract The potential organic nonlinear optical (NLO) materials of benzimidazole single crystals have been grown by vertical Bridgman technique by optimizing the growth conditions. The crystalline perfection has been studied by high resolution X-ray diffractometry (HRXRD).
N. Vijayan, G. Bhagavannarayana, N. Balamurugan, R. Ramesh Babu, K.K. Maurya, R. Gopalakrishnan, P. Ramasamy   +6 more
core   +3 more sources

Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman technique

Journal of Crystal Growth, 2007
One of the main problems affecting the vertical Bridgman growth of CdZnTe crystals is the crystal-crucible contact. In this work, we show that it is possible to avoid this interaction by inserting a stable boron oxide liquid layer between the crucible and the melt.
A. Zappettini, M. Zha, PAVESI, Maura, L. Zanotti   +3 more
openaire   +4 more sources

Charge transport properties in CdZnTe detectors grown by the vertical Bridgman technique

Journal of Applied Physics, 2011
Presently, a great amount of effort is being devoted to the development of CdTe and CdZnTe (CZT) detectors for a large variety of applications such as medical, industrial, and space research. We present the spectroscopic properties of some CZT crystals grown by the standard vertical Bridgman method and by the boron oxide encapsulated vertical Bridgman ...
Auricchio, N, Marchini, L, Caroli, E, Zappettini, A, ABBENE, Leonardo, Honkimaki V.   +5 more
openaire   +5 more sources

Orientation of the basal plane of single crystals of GaSe grown by vertical Bridgman technique

Journal of Crystal Growth, 1977
Abstract In this work we establish a simple procedure for determining the orientation of the basal plane of GaSe crystals grown by the vertical Bridgman technique. For this purpose we have used X-ray techniques along with etching and observation of the surface by optical microscopy.
H. Sampaio, A. Gouskov, Z.P. Arguello
openaire   +2 more sources