Results 31 to 40 of about 717 (187)

Cl-Doped CdTe Crystal Growth for Medical Imaging Applications

Crystals, 2022
CdTe:Cl doped single crystals were grown under conditions of tellurium excess by using an accelerated crucible rotation technique, modified vertical Bridgman (ACRT-MVB) method.
Rubi Gul, John Stuart McCloy, Magesh Murugesan, Benjamin Montag, Jasdeep Singh   +4 more
doaj   +1 more source

Growth and optical caracteristics of the CsI:Li scintillator crystal for use as radiation detector

Brazilian Journal of Radiation Sciences, 2021
Materials capable of converting ionizing radiation into light photons are called scintillators, some have specific efficiencies for certain applications and types of radiation, e.g. gamma, X-ray, alpha, beta and neutrons.
Maria da Conceição Costa Pereira, Tufic Madi Filho, Lucas Faustino Tomaz, José Roberto Berretta   +3 more
doaj   +1 more source

Growth of β-Ga2O3 single crystals using vertical Bridgman method in ambient air [PDF]

, 2016
A new approach to beta-Ga2O3 single crystal growth was studied, using the vertical Bridgman (VB) method in ambient air, while measuring the beta-Ga2O3 melting temperature and investigating the effects of crucible composition and shape.
Miyagawa, C, Kobayashi, T, Nakamura, Y, Yanagisawa, J, Hoshikawa, K, Ohba, E   +5 more
core   +1 more source

Fabrication of Small-Pixel CdZnTe Sensors and Characterization with X-rays

Sensors, 2021
Over the past few years, sensors made from high-Z compound semiconductors have attracted quite some attention for use in applications which require the direct detection of X-rays in the energy range 30–100 keV.
Stergios Tsigaridas, Silvia Zanettini, Manuele Bettelli, Nicola Sarzi Amadè, Davide Calestani, Cyril Ponchut, Andrea Zappettini   +6 more
doaj   +1 more source

Bridgman Growth and Physical Properties Anisotropy of CeF₃ Single Crystals

Crystals, 2021
Bulk c-oriented CeF3 single crystals (sp. gr. P3¯c1) were grown successfully by the vertical Bridgman technique in a fluorinating atmosphere. A description of the crystal growth procedure and the solution of the difficulties during the growth process are
Denis N. Karimov, Dmitry S. Lisovenko, Anna G. Ivanova, Vadim V. Grebenev, Pavel A. Popov, Natalya L. Sizova   +5 more
doaj   +1 more source

Sn-doped Bi1.1Sb0.9Te2S bulk crystal topological insulator with excellent properties

Nature Communications, 2016
An ideal topological insulator possesses an insulating bulk and a unique conducting surface however such behaviour is typically inhibited by bulk conduction due to defects.
S. K. Kushwaha, I. Pletikosić, T. Liang, A. Gyenis, S. H. Lapidus, Yao Tian, He Zhao, K. S. Burch, Jingjing Lin, Wudi Wang, Huiwen Ji, A. V. Fedorov, Ali Yazdani, N. P. Ong, T. Valla, R. J. Cava   +15 more
doaj   +1 more source

Growth and anisotropy of transport properties of CuGaSe2 single crystals

Heliyon, 2018
Single crystals of CuGaSe2 are prepared by a technique based on the vertical Bridgman procedure. The crystal chemical and phase compositions were identified by using dispersive X-ray fluorescence spectrometry and X-ray diffraction data analysis ...
M. Mobarak, M. Ashari, M.M. Nassary, S.G. Fatma   +3 more
doaj   +1 more source

Quantitative determination of short-range order in magnetostrictive Fe-12.5 at. % Ga alloy single crystals

AIP Advances, 2020
FeGa alloys are an important class of magnetostrictive materials for use in actuators and sensors. Quantitative determination of short-range order is critical for a fundamental understanding of the correlation of thermal history with magnetostriction in ...
Richard A. Laroche, Sivaraman Guruswamy
doaj   +1 more source

Fabrication and Evaluation of Spectroscopic Grade Quasi-hemispherical CdZnTe Detector [PDF]

Journal of Radiation Protection and Research
Background: This study focuses on the fabrication and characterization of quasi-hemispherical Cd0.9Zn0.1Te (CZT) detector for gamma-ray spectroscopy applications, aiming to contribute to advancements in radiation measurement and research.
Beomjun Park, Kyungeun Jung, Changsoo Kim   +2 more
doaj   +1 more source

Vertical Bridgman growth of sapphire crystals, with thin-neck formation process

, 2014
A new technique is proposed in the traditional vertical Bridgman growth of sapphire crystals, in which thin-neck formation follows the initial seeding. Low-angle grain boundaries generated at the periphery of the seeding interface were eliminated at the ...
Taishi, T, Kobayashi, T, Kobayashi, T, Yanagisawa, J, Yanagisawa, J, Shinozuka, M, Hoshikawa, K, Miyagawa, C, Ohba, E, Miyagawa, C, Taishi, T, Hoshikawa, K, Ohba, E, Shinozuka, M   +13 more
core   +1 more source