Results 31 to 40 of about 4,807,933 (188)
Nano-indentation behavior of equiatomic Fe–Ni Invar alloy single crystals [PDF]
AIP AdvancesThe influence of crystallographic orientation on the mechanical behavior of equiatomic Fe–Ni single crystal is examined through nanoindentation. Single crystals were grown using vertical Bridgman technique.
Rahulkumar Sunil Singh +2 more
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Joyce Bridgman, Graduate Recital, June 26, 1974 [PDF]
, 1974 Concert program for Joyce Bridgman, Graduate Recital, June 26 ...
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AIP Advances, 2020 FeGa alloys are an important class of magnetostrictive materials for use in actuators and sensors. Quantitative determination of short-range order is critical for a fundamental understanding of the correlation of thermal history with magnetostriction in ...
Richard A. Laroche, Sivaraman Guruswamy
doaj +1 more source
Fabrication and Evaluation of Spectroscopic Grade Quasi-hemispherical CdZnTe Detector [PDF]
Journal of Radiation Protection and ResearchBackground: This study focuses on the fabrication and characterization of quasi-hemispherical Cd0.9Zn0.1Te (CZT) detector for gamma-ray spectroscopy applications, aiming to contribute to advancements in radiation measurement and research.
Beomjun Park +2 more
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Vertical Bridgman Growth of GaAs
, 1988 We have developed a process to grow both undoped, semi-insulating (SI) and silicon-doped, semiconducting (SC) GaAs using a vertical Bridgman method. The technique combines advantages of both liquid encapsulated Czochralski (LEC) and horizontal Bridgman ...
R. E. Kremer +4 more
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High compositional homogeneity of CdTexSe1−x crystals grown by the Bridgman method
APL Materials, 2015 We obtained high-quality CdTexSe1−x (CdTeSe) crystals from ingots grown by the vertical Bridgman technique. The compositional uniformity of the ingots was evaluated by X-ray fluorescence at BNL’s National Synchrotron Light Source X27A beam line.
U. N. Roy +10 more
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Thermal analysis of the vertical bridgman semiconductor crystal growth technique [PDF]
, 1982 The quality of semiconductor crystals grown by the vertical Bridgman technique is strongly influenced by the axial and radial variations of temperature within the charge. The relationship between the thermal parameters of the vertical Bridgman system and
Jasinski, T. J.
core
Bias Polarity Switching (BiPS): A Transient Method for Probing Interfacial Carrier Dynamics
Small Methods, EarlyView.Bias Polarity Switching combines optical excitation with rapid bias reversal to probe near‐interface carrier accumulation, trapping, detrapping, and extraction together with bulk carrier transport. The method provides access to defect kinetics and contact‐related transport processes, offering a complementary approach for investigating semiconductor ...
Marián Betušiak +8 more
wiley +1 more source
, 2011 CdZnTe crystals were grown by the vertical Bridgman method in closed quartz ampoules. The crystalline quality and the impurity content of these crystals were studied. Several X-ray detectors were cut out of these crystals.
R. Mosca +49 more
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Evaluation of Radiation Tolerance of 6LiInP2Se6 for Neutron Science
physica status solidi (a), Volume 223, Issue 21, 11 November 2026.6LiInP2Se6 is a room‐temperature semiconductor with favorable properties for neutron imaging applications. To evaluate real‐world suitability, samples were exposed to fluences up to 1015 n/cm2 s. Results from characterization of the bare crystals and measured alpha spectra recorded after fabricating the irradiated samples into detectors indicate ...
Erick Hoegberg +6 more
wiley +1 more source